Al2O3/AlGaN/GaN MOS-HEMT with High On/Off Drain Current Ratio

ZHAO Yong-bing; ZHANG Yun; CHENG Zhe; HUANG Yu-liang; ZHANG Lian; LIU Zhi-qiang; YI Xiao-y

doi:10.3788/fgxb20163705.0578

您当前的位置：

首页 >

文章列表页 >

Al₂O₃/AlGaN/GaN MOS-HEMT with High On/Off Drain Current Ratio

更新时间：2020-08-12

- Al₂O₃/AlGaN/GaN MOS-HEMT with High On/Off Drain Current Ratio
- Chinese Journal of Luminescence Vol. 37, Issue 5, Pages: 578-582(2016)
- 作者机构：
  
  1. 中国科学院大学北京,100049
  2. 中国科学院半导体研究所半导体照明研发中心北京,100083
  3. 半导体照明联合创新国家重点实验室北京,100083
  4. 北京市第三代半导体材料及应用技术工程中心北京,100083
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163705.0578
  CLC： TN5;TN3;TN4
- Received：18 January 2016，
  
  Revised：03 March 2016，
  
  Published：05 May 2016
- 稿件说明：
移动端阅览
赵勇兵, 张韵, 程哲等. 具有高开启/关断电流比的Al2O3/AlGaN/GaN金属氧化物半导体高电子迁移率晶体管[J]. 发光学报, 2016,37(5): 578-582

ZHAO Yong-bing, ZHANG Yun, CHENG Zhe etc. Al2O3/AlGaN/GaN MOS-HEMT with High On/Off Drain Current Ratio[J]. Chinese Journal of Luminescence, 2016,37(5): 578-582
赵勇兵, 张韵, 程哲等. 具有高开启/关断电流比的Al2O3/AlGaN/GaN金属氧化物半导体高电子迁移率晶体管[J]. 发光学报, 2016,37(5): 578-582 DOI： 10.3788/fgxb20163705.0578.

ZHAO Yong-bing, ZHANG Yun, CHENG Zhe etc. Al2O3/AlGaN/GaN MOS-HEMT with High On/Off Drain Current Ratio[J]. Chinese Journal of Luminescence, 2016,37(5): 578-582 DOI： 10.3788/fgxb20163705.0578.

摘要

采用原子层淀积(ALD)方法

制备了Al

为栅介质的高性能AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT)。在栅压为-20 V时

MOS-HEMT的栅漏电比Schottky-gate HEMT的栅漏电低4个数量级以上。在栅压为+2 V时

Schottky-gate HEMT的栅漏电为191A;在栅压为+20 V时

MOS-HEMT的栅漏电仅为23.6 nA

比同样尺寸的Schottky-gate HEMT的栅漏电低将近7个数量级。AlGaN/GaN MOS-HEMT的栅压摆幅达到了20 V。在栅压

=0 V时

MOS-HEMT的饱和电流密度达到了646 mA/mm

相比Schottky-gate HEMT的饱和电流密度(277 mA/mm)提高了133%。栅漏间距为10m的AlGaN/GaN MOS-HEMT器件在栅压为+3 V时的最大饱和输出电流达到680 mA/mm

特征导通电阻为1.47 mcm

。Schottky-gate HEMT的开启与关断电流比仅为10

MOS-HEMT的开启与关断电流比超过了10

超出了Schottky-gate HEMT器件4个数量级

原因是栅漏电的降低提高了MOS-HEMT的开启与关断电流比。在V

=-14 V时

栅漏间距为10m的AlGaN/GaN MOS-HEMT的关断击穿电压为640 V

关断泄露电流为27A/mm。

Abstract

This essay has reported the fabrication of a metal-oxide-semiconductor AlGaN/GaN high electron mobility transistor (MOS-HEMT) with an Al

insulator layer which was deposited by atomic layer deposition (ALD) as the gate dielectric. The MOS-HEMT with a gate-drain distance of 10m exhibits a drive current density of 680 mA/mm at a gate-source bias (

) of +3 V and a specific on-resistance of 1.47 mcm

. Under a negative gate bias of -20 V

the gate leakage current of the MOS HEMT is over four orders of magnitude

which is lower than that of the Schottky-gate HEMT. The off-state breakdown voltage is 640 V at drain leakage current of 27A/mm with

=-14 V. The Schottky-gate HEMT leakage current is 191A at the gate bias of +2 V and the MOS HEMT leakage current is as low as 23.6 nA at the gate bias of +20 V

which is approximately seven orders of magnitude lower than that of the Schottky-gate HEMT with similar gate dimensions. The on/off drain-current ratio (I

off

) is over 10

for the MOS-HEMT.

关键词

Keywords

references

IKEDA N, NIIYAMA Y, KAMBAYASHI H, et al.. GaN power transistors on Si substrates for switching applications[J]. Proc. IEEE, 2010, 98(7):1151-1161.

CHOW T P, TYAGI R. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices[J]. IEEE Trans. Electron. Dev., 1994, 41(8):1481-1483.

TRIVEDI M, SHENAI K. Performance evaluation of high-power wide band-gap semiconductor rectifiers[J]. J. Appl. Phys., 1999, 85(9):6889-6897.

HASHIZUME T, OOTOMO S, HASEGAWA H. Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric[J]. Appl. Phys. Lett., 2003, 83(14):2952-2954.

KHAN M A, SIMIN G, YANG J W, et al.. Insulating gate Ⅲ-N heterostructure field-effect transistors for high-power microwave and switching applications[J]. IEEE Trans. Microw. Theory Tech., 2003, 51(2):624-633.

KHAN M A, HU X, SUMIN G, et al.. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor[J]. IEEE Electron. Dev. Lett., 2000, 21(2):63-65.

YANG S, TANG Z K, WONG K Y, et al.. High-quality interface in Al2O3/GaN/GaN/AlGaN/GaN MIS structures with in situ pre-gate plasma nitridation[J]. IEEE Electron. Dev. Lett., 2013, 34(12):1497-1499.

TANG Z K, JIANG Q M, LU Y Y, et al.. 600-V normally off SiNx/AlGaN/GaN MIS-HEMT with large gate swing and low current collapse[J]. IEEE Electron. Dev. Lett., 2013, 34(11):1373-1375.

HU X, KOUDYMOV A, SIMIN G, et al.. Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors[J]. Appl. Phys. Lett., 2001, 79(17):2832-2834.

WANG W F, DERLUYN J, GERMAIN M, et al.. Effect of surface passivation on two-dimensional electron gas carrier density in AlGaN/GaN structures[J]. Jpn. J. Appl. Phys., 2006, 45(8):L224-L226.

SHI J X, CHOI Y C, POPHRISTIC M, et al.. High breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire[J]. Phys. Stat. Sol. C, 2008, 5(6):2013-2015.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

High-threshold-voltage Normally-off Recessed MOS-gate AlGaN/GaN HEMT with Large Gate Swing

Improvement of IGZO-TFTs Performance with SiN_x Gate Insulator Modified by Al₂O₃ Film

Related Author

GUO Yong-lin

LIANG Xu-xu

HU Shou-cheng

MU Xiao-ling

QU Jia-wei

WANG Hong-bo

ZHAO Yi

Related Institution

State Key Laboratory on Integrated Optoelectronics, Jilin University Region, College of Electronic Science and Engineering, Jilin University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰