RF Sulfur-plasma Passivation of GaAs(100) Surface

XU Liu-yang; GAO Xin; YUAN Xu-ze; XIA Xiao-yu; CAO Xi-wen; QIAO Zhong-liang; BO Bao-xue

doi:10.3788/fgxb20163705.0556

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RF Sulfur-plasma Passivation of GaAs(100) Surface

更新时间：2020-08-12

- RF Sulfur-plasma Passivation of GaAs(100) Surface
- Chinese Journal of Luminescence Vol. 37, Issue 5, Pages: 556-560(2016)
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163705.0556
  CLC： TN248.4
- Received：23 December 2015，
  
  Revised：27 February 2016，
  
  Published：05 May 2016
- 稿件说明：
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许留洋, 高欣, 袁绪泽等. 射频等离子硫钝化GaAs(100)的表面特性[J]. 发光学报, 2016,37(5): 556-560

XU Liu-yang, GAO Xin, YUAN Xu-ze etc. RF Sulfur-plasma Passivation of GaAs(100) Surface[J]. Chinese Journal of Luminescence, 2016,37(5): 556-560
许留洋, 高欣, 袁绪泽等. 射频等离子硫钝化GaAs(100)的表面特性[J]. 发光学报, 2016,37(5): 556-560 DOI： 10.3788/fgxb20163705.0556.

XU Liu-yang, GAO Xin, YUAN Xu-ze etc. RF Sulfur-plasma Passivation of GaAs(100) Surface[J]. Chinese Journal of Luminescence, 2016,37(5): 556-560 DOI： 10.3788/fgxb20163705.0556.

摘要

采用射频等离子方法

对GaAs(100)衬底片表面进行干法硫等离子体钝化

旨在得到性能稳定含硫钝化层。样品经过360℃温度条件下的快速热退火

光致发光(PL)测试表明

钝化后的样品PL强度上升了71%。同时

钝化样品的稳定性测试结果表明

样品放置在实验室空气中30 d

其PL强度未出现明显变化

说明GaAs的等离子体干法硫钝化具有较好的性能稳定性。

Abstract

Sulfur-plasma process was proposed to clean and passivate the surface of (100) oriented GaAs wafers for stable sulfur passivation effect. The photoluminescence (PL) intensity of processed samples with sulfur-plasma had an obvious improvement after 360℃ annealing

and 71% higher than the unpassivated sample. The stability of passivation was also tested. There was no obvious PL intensity degradation while the sample stored in open air over a month. The experiment results show that the passivation of GaAs surface treated by sulfur-plasma process has good stability.

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references

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