Fabrication and Characteristics of GaN-based Blue VCSEL

CAI Li-e; ZHANG Bao-ping; ZHANG Jiang-yong; SHEN Han-xin; ZHU Wen-zhang

doi:10.3788/fgxb20163704.0452

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Fabrication and Characteristics of GaN-based Blue VCSEL

更新时间：2020-08-12

- Fabrication and Characteristics of GaN-based Blue VCSEL
- Chinese Journal of Luminescence Vol. 37, Issue 4, Pages: 452-456(2016)
- 作者机构：
  
  1. 厦门理工学院光电与通信工程学院,福建厦门,361024
  2. 福建省光电信息材料与器件重点实验室,福建厦门,361024
  3. 厦门大学信息学院电子系,福建厦门,361005
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163704.0452
  CLC： TN248.4
- Received：17 December 2015，
  
  Revised：03 February 2016，
  
  Published：05 April 2016
- 稿件说明：
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蔡丽娥, 张保平, 张江勇等. GaN基蓝光VCSEL的制备及光学特性[J]. 发光学报, 2016,37(4): 452-456

CAI Li-e, ZHANG Bao-ping, ZHANG Jiang-yong etc. Fabrication and Characteristics of GaN-based Blue VCSEL[J]. Chinese Journal of Luminescence, 2016,37(4): 452-456
蔡丽娥, 张保平, 张江勇等. GaN基蓝光VCSEL的制备及光学特性[J]. 发光学报, 2016,37(4): 452-456 DOI： 10.3788/fgxb20163704.0452.

CAI Li-e, ZHANG Bao-ping, ZHANG Jiang-yong etc. Fabrication and Characteristics of GaN-based Blue VCSEL[J]. Chinese Journal of Luminescence, 2016,37(4): 452-456 DOI： 10.3788/fgxb20163704.0452.

摘要

利用金属有机物气相沉积技术(MOCVD)在(0001)蓝宝石衬底上生长了 GaN 基垂直腔面发射激光器(VCSEL) 的多量子阱腔层结构。X射线衍射测量显示该多量子阱具有良好周期结构和平整界面。运用键合及激光剥离技术将该外延片制作成 VCSEL

顶部和底部反射镜为极高反射率的介质膜分布布拉格反射镜 (DBR)。在室温、紫外脉冲激光的泵浦条件下

观察到了VCSEL明显的激射现象

峰值波长位于447.7 nm

半高宽为0.11 nm

自发辐射因子约为6.010

-2

阈值能量密度约为8.8 mJ/cm

。在大幅度降低制作难度的情况下

得到目前国际最好结果同样数量级的激射阈值。降低器件制作难度有利于制备的重复性

有利于器件的产品化。

Abstract

GaN-based multiple quantum wells (MQWs) were epitaxially grown on (0001)-oriented sapphire substrate by metal organic chemical vapor deposition (MOCVD) technique. X-ray diffraction measurements indicated that the MQWs had good periodic structure and smooth interface. By employing bonding and laser lift-off techniques

the MQW structure was sandwiched between two high reflectivity dielectric distributed Bragg reflectors (DBRs)

forming a vertical-cavity surface-emitting laser (VCSEL). Under optical pumping

the VCSEL achieved laser action at room temperature with a threshold pumping energy density of about 8.8 mJ/cm

. The laser emitted a blue light at 447.7 nm with a narrow linewidth of 0.11 nm

and had a high spontaneous emission factor of about 6.010

-2

关键词

Keywords

references

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