Influence of Oxygen Content on The Optical and Electrical Properties of NiO: Cu/ZnO pn Heterojunctions Fabricated by RF Sputtering

LI Tong; EVARIST Mariam; WANG Tie-gang; CHEN Jia-mei; FAN Qi-xiang; NI Xiao-chang; ZHAO Xi

doi:10.3788/fgxb20163704.0416

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Influence of Oxygen Content on The Optical and Electrical Properties of NiO: Cu/ZnO pn Heterojunctions Fabricated by RF Sputtering

更新时间：2020-08-12

- Influence of Oxygen Content on The Optical and Electrical Properties of NiO: Cu/ZnO pn Heterojunctions Fabricated by RF Sputtering
- Chinese Journal of Luminescence Vol. 37, Issue 4, Pages: 416-421(2016)
- 作者机构：
  
  1. 天津职业技术师范大学电子工程学院天津,300222
  2. 天津职业技术师范大学天津市高速切削与精密加工重点实验室天津,300222
  3. 东京理科大学物理系东京,日本
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163704.0416
  CLC： O484.4;TB303
- Received：24 December 2015，
  
  Revised：08 March 2016，
  
  Published：05 April 2016
- 稿件说明：
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李彤, EVARIST Mariam, 王铁钢等. 氧气含量对射频磁控溅射方法制备的NiO:Cu/ZnO异质pn结的光电性能的影响[J]. 发光学报, 2016,37(4): 416-421

LI Tong, EVARIST Mariam, WANG Tie-gang etc. Influence of Oxygen Content on The Optical and Electrical Properties of NiO: Cu/ZnO pn Heterojunctions Fabricated by RF Sputtering[J]. Chinese Journal of Luminescence, 2016,37(4): 416-421
李彤, EVARIST Mariam, 王铁钢等. 氧气含量对射频磁控溅射方法制备的NiO:Cu/ZnO异质pn结的光电性能的影响[J]. 发光学报, 2016,37(4): 416-421 DOI： 10.3788/fgxb20163704.0416.

LI Tong, EVARIST Mariam, WANG Tie-gang etc. Influence of Oxygen Content on The Optical and Electrical Properties of NiO: Cu/ZnO pn Heterojunctions Fabricated by RF Sputtering[J]. Chinese Journal of Luminescence, 2016,37(4): 416-421 DOI： 10.3788/fgxb20163704.0416.

摘要

利用磁控溅射方法改变氧气含量制备了一系列NiO:Cu/ZnO异质pn结。实验结果表明

氧含量对NiO:Cu/ZnO异质pn结电学影响很大。相对于纯氩溅射

引入一定氧气(O

/(Ar+O

)比例为30%)后

NiO:Cu/ZnO异质pn结的整流特性明显得到改善。与此同时

NiO:Cu/ZnO异质pn结的光透过率也从40%增大到80%。这可能是由于氧气的轻量引入致使NiO:Cu/ZnO异质pn结的结晶得到改善

薄膜内缺陷减少所致。进一步提高氧气含量

直到O

/(Ar+O

)比例至80%后

异质结的整流特性有所削弱

这可能是由于过多氧气的引入造成薄膜缺陷再次增多

进而影响到异质结的整流特性。这一结论得到了EDS、XRD、AFM和UV结果的支持。

Abstract

NiO:Cu/ZnO pn heterojunctions with different oxygen concentration were fabricated by magnetron sputtering technology. The rectifying characteristics of NiO:Cu/ZnO pn heterojunctions have been improved with the O

/(Ar+O

) ratio from 0% to 30%

where the average optical transmittance increases from 40% to 80% in the visible range

which may be explained by the improved crystallization due to the reduced defects. When the oxygen partial pressure increases to 80%

the rectifying property is depressed again because of introducing more oxygen into the sample and the appearance of more defects. These results are also evidenced by EDS

XRD

AFM and UV results.

关键词

Keywords

references

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