n-type Electrode Patterns Design and Device Fabrication of GaN-based Vertical Structure LEDs

LIU Li; HU Xiao-long; WANG Hong

doi:10.3788/fgxb20163703.0338

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n-type Electrode Patterns Design and Device Fabrication of GaN-based Vertical Structure LEDs

更新时间：2020-08-12

- n-type Electrode Patterns Design and Device Fabrication of GaN-based Vertical Structure LEDs
- Chinese Journal of Luminescence Vol. 37, Issue 3, Pages: 338-345(2016)
- 作者机构：
  
  华南理工大学广东省光电工程技术研究中心, 物理与光电学院,广东广州,510640
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163703.0338
  CLC： TN383+.1
- Received：16 November 2015，
  
  Revised：15 December 2015，
  
  Published：05 March 2016
- 稿件说明：
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刘丽, 胡晓龙, 王洪. GaN基垂直结构LED的n型电极结构设计及芯片制备[J]. 发光学报, 2016,37(3): 338-345

LIU Li, HU Xiao-long, WANG Hong. n-type Electrode Patterns Design and Device Fabrication of GaN-based Vertical Structure LEDs[J]. Chinese Journal of Luminescence, 2016,37(3): 338-345
刘丽, 胡晓龙, 王洪. GaN基垂直结构LED的n型电极结构设计及芯片制备[J]. 发光学报, 2016,37(3): 338-345 DOI： 10.3788/fgxb20163703.0338.

LIU Li, HU Xiao-long, WANG Hong. n-type Electrode Patterns Design and Device Fabrication of GaN-based Vertical Structure LEDs[J]. Chinese Journal of Luminescence, 2016,37(3): 338-345 DOI： 10.3788/fgxb20163703.0338.

摘要

首先利用电流路径模型分析n型电极尺寸及间距等对垂直结构发光二极管(VS-LEDs)电流分布均匀性的影响

依此设计出一种螺旋状环形结构电极。其次

通过建立有限元分析软件Comsol仿真模型模拟VS-LEDs有源层的电流密度分布

发现螺旋状环形结构电极的环间距越小

电流密度分布越均匀。最后

利用VS-LEDs芯片制备技术实现具有螺旋状环形电极的垂直结构LED芯片。实验结果显示

在350 mA电流驱动下

电极环间距为146.25 m的芯片具有最大的功能转换效率

达到26.8%。

Abstract

The influences of size and spacing of n-type electrode on the current distribution of vertical-structure light-emitting diodes (VS-LEDs) were firstly analyzed by two-dimension circuit modeling

and annulospiral n-type electrodes were proposed for the fabrication of VS-LEDs. Then

finite element analysis model in Comsol Multiphysics was built to study the current density distribution in the active layer of VS-LEDs with the annulospiral electrodes. It is found that the current density distribution became more uniform when the electrode spacing reduced. Finally

VS-LEDs with various annulospiral electrodes were fabricated using high-reflectivity p-type Ohmic electrode

copper substrate electroplating and laser lift-off techniques. The wall plug efficiency of VS-LEDs with the electrode spacing of 146.25 m is 26.8% at 350 mA

which is higher than that of VS-LEDs with other electrode spacings.

关键词

Keywords

references

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