Effect of Quantum Barrier Structures on Photoelectric Properties of GaN-based Green LED on Si Substrates

TANG Ying-wen; XIONG Chuan-bing; JING Xiao-yu

doi:10.3788/fgxb20163703.0327

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Effect of Quantum Barrier Structures on Photoelectric Properties of GaN-based Green LED on Si Substrates

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- Effect of Quantum Barrier Structures on Photoelectric Properties of GaN-based Green LED on Si Substrates
- Chinese Journal of Luminescence Vol. 37, Issue 3, Pages: 327-331(2016)
- 作者机构：
  
  1. 南昌大学国家硅基LED工程技术研究中心,江西南昌,330047
  2. 闽南师范大学物理与信息工程学院,福建漳州,363000
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163703.0327
  CLC： TB339;TN383+.1
- Received：29 November 2015，
  
  Revised：21 December 2015，
  
  Published：05 March 2016
- 稿件说明：
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汤英文, 熊传兵, 井晓玉. 量子垒结构对Si衬底GaN基绿光LED光电性能的影响[J]. 发光学报, 2016,37(3): 327-331

TANG Ying-wen, XIONG Chuan-bing, JING Xiao-yu. Effect of Quantum Barrier Structures on Photoelectric Properties of GaN-based Green LED on Si Substrates[J]. Chinese Journal of Luminescence, 2016,37(3): 327-331
汤英文, 熊传兵, 井晓玉. 量子垒结构对Si衬底GaN基绿光LED光电性能的影响[J]. 发光学报, 2016,37(3): 327-331 DOI： 10.3788/fgxb20163703.0327.

TANG Ying-wen, XIONG Chuan-bing, JING Xiao-yu. Effect of Quantum Barrier Structures on Photoelectric Properties of GaN-based Green LED on Si Substrates[J]. Chinese Journal of Luminescence, 2016,37(3): 327-331 DOI： 10.3788/fgxb20163703.0327.

摘要

在Si衬底上外延生长了3种不同量子垒结构的绿光外延片并制作成垂直结构芯片

3种量子垒结构分别为GaN、In

0.05

0.95

N/Al

0.1

0.9

N/In

0.05

0.95

N、In

0.05

0.95

N/GaN/In

0.05

0.95

对应的3种芯片样品为A、B、C

研究了3种样品的变温电致发光特性。垒结构的改变虽然对光功率影响很小

但是在光谱性能上会引起显著改变

结果如下:在低温(13 K)大电流下

随着电流密度的增大

样品的EL谱峰值波长蓝移更为显著

程度依次为B

AC;在高温(300 K)小电流下

随着电流密度的增大

样品EL谱的峰值波长蓝移程度的大小依次为A

C。在同一电流下

随着温度的升高

样品在大部分电流下的EL谱峰值波长出现"S"型波长漂移

在极端电流下又表现出不同的漂移情况。这些现象与局域态、应力、压电场、禁带宽度等因素有关。

Abstract

Three different quantum barrier structures of GaN-based green LED were grown on Si(111) substrates

and then high power vertical structure LED chips were fabricated. The three kinds of quantum barrier structures were GaN

0.05

0.95

N/Al

0.1

0.9

N/In

0.05

0.95

0.05

0.95

N/GaN/In

0.05

0.95

and the corresponding three chip samples were A

C. The electroluminescence properties of these three kinds of chips with the same expitaxial structure except the quantum barrier structure were investigated at different forward current densities and ambient temperatures. Although the influence on luminous power is very small with the change of the quantum barrier structures

the change of the spectral properties is significant. Under 13 K

the EL peak wavelength blue shifts when the driving current increases from 0.01 to 400 mA

it is B

AC in sequence. While under 300 K

the difference in EL peak wavelength blue shift is A

C. At the same forward current densities

when the temperature increases from 13 to 320 K

the EL peak wavelengths of the three kinds of chips are S-shaped at most current

but are different shapes under extreme current. Perhaps

it is due to the fact that the differences in localized states

stress

piezoelectric filed and energy among these three kinds of quantum barrier structures lead to the different EL properties.

关键词

Keywords

references

CRAWFORD M H. LEDs for solid-state lighting: performance challenges and recent advances [J]. IEEE J. Sel. Top. Quant. Electron., 2009, 15(4):1028-1040.

NAKAMURA S, MUKAI T, SENOH M. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes [J]. Appl. Phys. Lett., 1994, 64(13):1687-1689.

NAKAMURA S, SENOH M, NAGAHAMA S I, et al.. InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substrates [J]. Appl. Phys. Lett., 1996, 68(15):2105-2107.

TANG H, HAFFOUZ S, BARDWELL J A. Si(111) substrates as highly effective pseudomasks for selective growth of GaN material and devices by ammonia-molecular-beam epitaxy [J]. Appl. Phys. Lett., 2006, 88(17):172110-1-3.

DEBNATH R K, MEIJERS R, RICHTER T, et al.. Mechanism of molecular beam epitaxy growth of GaN nanowires on Si (111) [J]. Appl. Phys. Lett., 2007, 90(12):123117-1-3.

KROST A, DADGAR A. GaN-based optoelectronics on silicon substrates [J]. Mater. Sci. Eng.: B, 2002, 93(1-3):77-84.

王小丽,王文新,江洋,等. 具有超晶格应力调制结构的绿光InGaN/GaN多量子阱的发光特性 [J]. 发光学报, 2011, 32(11):1152-1158. WANG X L, WANG W X, JIAN G Y, et al.. Luminescent performances of green InGaN/GaN MQW LED employing superlattices strain adjusting structures [J]. Chin. J. Lumin., 2011, 32(11):1152-1158. (in Chinese)

CHO Y H, SONG J J, KELLER S, et al.. Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells [J]. Appl. Phys. Lett., 1998, 73(8):1128-1130.

GRUDOWSKI P A, EITING C J, PARK J, et al.. Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor deposition [J]. Appl. Phys. Lett., 1997, 71(11):1537-1539.

MO C L, FANG W Q, PU Y, et al.. Growth and characterization of InGaN blue LED structure on Si (111) by MOCVD [J]. J. Cryst. Growth, 2005, 285(3):312-317.

WANG T, SAEKI H, BAI J, et al.. Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures [J]. Appl. Phys. Lett., 2000, 76(13):1737-1739.

WANG T, BAI J, SAKAI S. Influence of InGaN/GaN quantum-well structure on the performance of light-emitting diodes and laser diodes grown on sapphire substrates [J]. J. Cryst. Growth, 2001, 224(1-2):5-10.

邢艳辉,邓军,韩军,等. 引入n型InGaN/GaN超晶格层提高量子阱特性研究 [J]. 物理学报, 2009, 58(1): 590-595. XING Y H, DENG J, HAN J, et al.. Improving the quantum well properties with n-type InGaN/GaN superlattices layer [J]. Acta Phys. Sinica, 2009, 58(1):590-595. (in Chinese)

李弋,刘斌,谢自力,等. 高分辨率X射线衍射研究InGaN/GaN多量子阱结构In组分及厚度 [J]. 功能材料, 2008, 39(8):1259-1260. LI Y, LIU B, XIE Z L, et al.. High-resolution X-ray diffraction studies on the indium content and layer thickness in InGaN/GaN multiquantum wells [J]. J. Funct. Mater., 2008, 39(8):1259-1260. (in Chinese)

ELISEEV P G, PERLIN P, LEE J, et al.. "Blue" temperature-induced shift and band-tail emission in InGaN-based light sources [J]. Appl. Phys. Lett., 1997, 71(5):569-571.

LI Q, XU S J, CHENG W C, et al.. Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys [J]. Appl. Phys. Lett., 2001, 79(12):1810-1812.

S'WIETLIK T, FRANSSEN G, WIS'NIEWSKI P, et al.. Anomalous temperature characteristics of single wide quantum well InGaN laser diode [J]. Appl. Phys. Lett., 2006, 88(7):071121-1-3.

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