Quantum Dot Light-emitting Diodes with Mixed Polymer-quantum Dots Light-emitting Layer

PENG Hui-ren; CHEN Shu-ming; WANG Yi

doi:10.3788/fgxb20163703.0299

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Quantum Dot Light-emitting Diodes with Mixed Polymer-quantum Dots Light-emitting Layer

更新时间：2020-08-12

- Quantum Dot Light-emitting Diodes with Mixed Polymer-quantum Dots Light-emitting Layer
- Chinese Journal of Luminescence Vol. 37, Issue 3, Pages: 299-304(2016)
- 作者机构：
  
  1. 五邑大学应用物理与材料学院,广东江门,529020
  2. 南方科技大学电子与电气工程系,广东深圳,518055
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163703.0299
  CLC： TN383+.1;O482.31
- Received：26 October 2015，
  
  Revised：21 December 2015，
  
  Published：05 March 2016
- 稿件说明：
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彭辉仁, 陈树明, 王忆. 基于聚合物-量子点共混的量子点发光二极管[J]. 发光学报, 2016,37(3): 299-304

PENG Hui-ren, CHEN Shu-ming, WANG Yi. Quantum Dot Light-emitting Diodes with Mixed Polymer-quantum Dots Light-emitting Layer[J]. Chinese Journal of Luminescence, 2016,37(3): 299-304
彭辉仁, 陈树明, 王忆. 基于聚合物-量子点共混的量子点发光二极管[J]. 发光学报, 2016,37(3): 299-304 DOI： 10.3788/fgxb20163703.0299.

PENG Hui-ren, CHEN Shu-ming, WANG Yi. Quantum Dot Light-emitting Diodes with Mixed Polymer-quantum Dots Light-emitting Layer[J]. Chinese Journal of Luminescence, 2016,37(3): 299-304 DOI： 10.3788/fgxb20163703.0299.

摘要

在ITO玻璃上制备了ITO/poly(3

4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PASS)/poly(N

N-bis(4-butylphenyl)-N

N-bis(phenyl)benzidine(poly-TPD)/QD/1

5-Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl(TPBi)/LiF/Al 结构的量子点发光二极管(QD-LED)。通过优化量子点的浓度

发现浓度为30 mg/mL时的器件性能最优

最大外量子效率(EQE)为0.83%

最大发光亮度为4 076 cd/m

。为了进一步提高QD-LED的发光效率

将QD掺入聚合物poly(N-vinylcarbazole) (PVK)和1

3-Bis(5-(4-(tert-butyl)phenyl)-1

4-oxadiazol-2-yl)benzene (OXD-7)中

以使得注入的电子和空穴更加平衡

同时还有助于能量传递

降低QD团聚及修饰QD薄膜表面

减少激子猝灭效应等。为此

通过旋涂和蒸镀两步法制备ITO/PEDOT:PASS/poly-TPD/(PVK:OXD-7):QD/TPBi/LiF/Al 结构的器件

改变(PVK:OXD-7):QD比例(1:1

1:3

1:5

0:1)

发现(PVK:OXD-7):QD为1:3时的QD-LED具有最优性能

最大EQE为1.97%

相当于非掺杂器件的2.3倍

并且发光峰没有发生偏移。

Abstract

Quantum dot light-emitting diodes (QDLED) with structure ITO/poly(3

4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PASS)/poly(N

N-bis(4-butylphenyl)-N

N-bis(phenyl)benzidine(poly-TPD)/QD/1

5-Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl (TPBi)/LiF/Al were fabricated. By optimizing the concentration of quantum dots

maximum external quantum efficiency (EQE) of 0.83% and maximum emission luminance of 4 076 cd/m

were achieved at a QD concentration of 30 mg/mL. In order to further improve the efficiency of QDLED

QDs were doped into polymer poly(N-vinylcarbazole) (PVK) and 1

3-Bis(5-(4-(tert-butyl)phenyl)-1

4-oxadiazol-2-yl)benzene (OXD-7) so as to balance the injection of electrons and holes

reduce the aggregation of QDs and improve the surface of the films. Devices with structure ITO/PEDOT:PASS/poly-TPD/(PVK:OXD-7):QD/TPBi/LiF/Al were fabricated by spin coating and thermal evaporation. By optimizing the doping concentration of QDs

the maximum EQE of 1.97% is obtained

which is 2.3-fold higher than that of the undoped devices.

关键词

Keywords

references

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