Simulation and Design of High Efficiency InGaN/ AlInGaN Based Light-emitting Diodes

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Simulation and Design of High Efficiency InGaN/ AlInGaN Based Light-emitting Diodes

更新时间：2020-08-12

- Simulation and Design of High Efficiency InGaN/ AlInGaN Based Light-emitting Diodes
- Chinese Journal of Luminescence Vol. 37, Issue 2, Pages: 208-212(2016)
- 作者机构：
  
  华南师范大学光电子材料与技术研究所,广东广州,510631
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163702.0208
  CLC： TN383;O484.4
- Received：26 October 2015，
  
  Revised：10 December 2015，
  
  Published：10 February 2016
- 稿件说明：
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宿世臣, 裴磊磊, 张红艳等. 高效InGaN/AlInGaN发光二极管的结构设计及其理论研究[J]. 发光学报, 2016,37(2): 208-212

SU Shi-chen, PEI Lei-lei, ZHANG Hong-yan etc. Simulation and Design of High Efficiency InGaN/ AlInGaN Based Light-emitting Diodes[J]. Chinese Journal of Luminescence, 2016,37(2): 208-212
宿世臣, 裴磊磊, 张红艳等. 高效InGaN/AlInGaN发光二极管的结构设计及其理论研究[J]. 发光学报, 2016,37(2): 208-212 DOI： 10.3788/fgxb20163702.0208.

SU Shi-chen, PEI Lei-lei, ZHANG Hong-yan etc. Simulation and Design of High Efficiency InGaN/ AlInGaN Based Light-emitting Diodes[J]. Chinese Journal of Luminescence, 2016,37(2): 208-212 DOI： 10.3788/fgxb20163702.0208.

摘要

利用Advanced Physical Models of Semiconductor Devices (APSYS)理论对比研究了InGaN/AlInGaN 和 InGaN/GaN多量子阱作为有源层的InGaN基发光二极管的结构和电学特性。与InGaN/GaN 基LED 中GaN作为垒层材料相比

在AlInGaN材料体系中

通过调节AlInGaN中Al和In的组分可以优化器件的性能。当InGaN阱层材料中In组分为8%时

可以实现无应力的In

0.08

Ga

0.92

N/AlInGaN基 LED。在这种无应力结构中可以进一步降低大功率LED的"效率下降"(Effciency droop)问题。理论模拟结果显示

四元系AlInGaN作为垒层可以进一步减少载流子泄露

增加空穴注入效率

减少极化场对器件性能的影响。在In

0.08

Ga

0.92

N /AlInGaN量子阱中的载流子浓度、有源层的辐射复合率、电流特性曲线和内量子效率等方面都优于InGaN/GaN基LED。无应变AlInGaN垒层代替传统的GaN垒层后

能够得到高效的发光二极管

并且大电流注入下的"效率滚降"问题得到改善。

Abstract

InGaN-based LEDs with InGaN/AlInGaN and InGaN/GaN multiple quantum wells (MQWs) were theoretically studied and compared by using the Advanced Physical Models of Semiconductor Devices (APSYS) simulation program

respectively. The carrier concentrations in quantum wells

radiative recombination rate in active region

light-current performance curves

and the internal quantum efficiency were investigated. The simulation results show that higher efficiency realized in the strain-free AlInGaN barrier instead of GaN.

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Keywords

references

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