Passivation Mechanism of AlOx Thin Film Fabricated on c-Si by Atomic Layer Deposition

ZHANG Bing-ye; XIE Hong-li; FANG Xuan; LIU Ai-min

doi:10.3788/fgxb20163702.0192

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Passivation Mechanism of AlO_x Thin Film Fabricated on c-Si by Atomic Layer Deposition

更新时间：2020-08-12

- Passivation Mechanism of AlO_x Thin Film Fabricated on c-Si by Atomic Layer Deposition
- Chinese Journal of Luminescence Vol. 37, Issue 2, Pages: 192-196(2016)
- 作者机构：
  
  1. 大连理工大学物理与光电工程学院,辽宁大连,116024
  2. 长春理工大学理学院,吉林长春,130022
- 作者简介：
- 基金信息：
  
  "863"
- DOI：10.3788/fgxb20163702.0192
  CLC： TP394.1;O484.4
- Received：24 November 2015，
  
  Revised：07 December 2015，
  
  Published：10 February 2016
- 稿件说明：
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张炳烨, 谢洪丽, 方铉等. 原子层沉积AlOx薄膜对单晶硅太阳能电池钝化机制的影响[J]. 发光学报, 2016,37(2): 192-196

ZHANG Bing-ye, XIE Hong-li, FANG Xuan etc. Passivation Mechanism of AlOx Thin Film Fabricated on c-Si by Atomic Layer Deposition[J]. Chinese Journal of Luminescence, 2016,37(2): 192-196
张炳烨, 谢洪丽, 方铉等. 原子层沉积AlOx薄膜对单晶硅太阳能电池钝化机制的影响[J]. 发光学报, 2016,37(2): 192-196 DOI： 10.3788/fgxb20163702.0192.

ZHANG Bing-ye, XIE Hong-li, FANG Xuan etc. Passivation Mechanism of AlOx Thin Film Fabricated on c-Si by Atomic Layer Deposition[J]. Chinese Journal of Luminescence, 2016,37(2): 192-196 DOI： 10.3788/fgxb20163702.0192.

摘要

采用原子层沉积设备在p型单晶制绒硅上制备了不同厚度的AlO

薄膜。通过研究AlO

薄膜厚度对样品的反射率、少数载流子寿命以及电容-电压特性的影响

发现沉积32 nm的AlO

薄膜样品具有最好的钝化效果。另外

通过计算Si/AlO

界面处的固定电荷密度和缺陷态密度

发现32 nm 厚的AlO

薄膜样品具有最低的缺陷态密度。系统研究了单晶硅材料的表面钝化机制

给出了影响样品载流子寿命的根本来源。

Abstract

AlO

thin films with various thicknesses were fabricated on p-type textured crystalline silicon wafers through atomic layer deposition. The optical and electrical properties of AlO

thin films were significantly improved by adjusting their thicknesses. The reflectance of AlO

thin films decreased from 10.12% to 0.96% with increasing thickness in a wide spectral range from 350 to 1 000 nm. The passivation effect of AlO

was discussed by using quasi steady state photo conductance (QSSPC) and capacitance-voltage (

C-V

) measurement. The AlO

thin film with the thickness of 32 nm shows the highest

eff

and lowest interfacial state density (

). The origin of the polarity changing of the equivalent oxide charge (

) for the annealed AlO

thin film was also investigated.

关键词

Keywords

references

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