Optical Transmission and Electrical Modulation for Silicone Semiconductor with Multi-field Effect

ZHOU Ji; HE Zhi-hong; YU Xiao-jun; YANG Dong-lai; DONG Shi-kui

doi:10.3788/fgxb20163701.0063

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Optical Transmission and Electrical Modulation for Silicone Semiconductor with Multi-field Effect

更新时间：2020-08-12

- Optical Transmission and Electrical Modulation for Silicone Semiconductor with Multi-field Effect
- Chinese Journal of Luminescence Vol. 37, Issue 1, Pages: 63-73(2016)
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所, 吉林长春 130033
  2. 哈尔滨工业大学能源学院,黑龙江哈尔滨,150001
  3. 中国空间技术研究院第508研究所, 北京 100094
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163701.0063
  CLC： TK124
- Received：08 October 2015，
  
  Revised：12 November 2015，
  
  Published：10 January 2016
- 稿件说明：
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周吉, 贺志宏, 于孝军等. 硅基半导体多场耦合下的光传输及电调控特性分析[J]. 发光学报, 2016,37(1): 63-73

ZHOU Ji, HE Zhi-hong, YU Xiao-jun etc. Optical Transmission and Electrical Modulation for Silicone Semiconductor with Multi-field Effect[J]. Chinese Journal of Luminescence, 2016,37(1): 63-73
周吉, 贺志宏, 于孝军等. 硅基半导体多场耦合下的光传输及电调控特性分析[J]. 发光学报, 2016,37(1): 63-73 DOI： 10.3788/fgxb20163701.0063.

ZHOU Ji, HE Zhi-hong, YU Xiao-jun etc. Optical Transmission and Electrical Modulation for Silicone Semiconductor with Multi-field Effect[J]. Chinese Journal of Luminescence, 2016,37(1): 63-73 DOI： 10.3788/fgxb20163701.0063.

摘要

针对硅基半导体电光热多场耦合特性及电调控问题

引入泊松方程和载流子连续性方程来计算载流子输运过程的浓度分布

利用德鲁德-洛伦兹公式和K-K关系式考虑载流子浓度变化对于光折射率和吸收系数的影响

并根据电磁耗散求解热沉积项。通过对半导体基本方程、电磁波动方程和能量方程的耦合方程组进行有限元求解

模拟并分析了电光热三者耦合作用下硅基半导体介电属性及光传输行为随外加电压、载流子初始浓度、换热系数等影响因素的变化规律。研究指出了半导体P区表面反射光电场模随外加电压的降低而升高

随换热系数的增大而降低的规律。利用该机制给出了对反射光强空间分布进行电热调控的方案。

Abstract

In order to study the silicon based semiconductor's electro-optic-thermal muti-field coupling characteristics and electric modulation problems

both the Poisson equation and the carrier continuity equation were introduced to calculate the carrier concentration distribution in the carrier transport procession. Drude Lorentz relation and K-K relation were also employed to discuss the effect of the carrier concentration on the refractive index and absorption coefficient. The heat deposited items were obtained by calculating electromagnetic dissipation. The coupled semiconductor basic equation

electromagnetic wave equation and energy equation were solved by using finite element method. With the effect of external voltage

initial concentration of carrier and heat transfer coefficient

the change of dielectric properties

optical transmission behavior of silicon based semiconductor were also analyzed by coupling solution and analysis. The results show that the reflective optical field mode of the semiconductor

area increases with the increasing of the applied voltage

and decreases with the increasing of the heat transfer coefficient. Using this mechanism

a scheme of electric thermal modulation for the space distribution of the reflection intensity was presented.

关键词

Keywords

references

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