Solution Processed HfInZnO Thin Film Transistors with HfSiOx Dielectrics Modified by Al2O3 Films

GAO Ya-na; XU Yun-long; ZHANG Jian-hua; LI Xi-feng

doi:10.3788/fgxb20163701.0050

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Solution Processed HfInZnO Thin Film Transistors with HfSiO_x Dielectrics Modified by Al₂O₃ Films

更新时间：2020-08-12

- Solution Processed HfInZnO Thin Film Transistors with HfSiO_x Dielectrics Modified by Al₂O₃ Films
- Chinese Journal of Luminescence Vol. 37, Issue 1, Pages: 50-55(2016)
- 作者机构：
  
  1. 上海大学材料科学与工程学院上海,200444
  2. 上海大学新型显示技术及应用集成教育部重点实验室上海,200072
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163701.0050
  CLC： TN321.5
- Received：02 September 2015，
  
  Revised：25 November 2015，
  
  Published：10 January 2016
- 稿件说明：
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高娅娜, 许云龙, 张建华等. 溶胶凝胶法制备以Al2O3为界面修饰层的铪铟锌氧薄膜晶体管[J]. 发光学报, 2016,37(1): 50-55

GAO Ya-na, XU Yun-long, ZHANG Jian-hua etc. Solution Processed HfInZnO Thin Film Transistors with HfSiOx Dielectrics Modified by Al2O3 Films[J]. Chinese Journal of Luminescence, 2016,37(1): 50-55
高娅娜, 许云龙, 张建华等. 溶胶凝胶法制备以Al2O3为界面修饰层的铪铟锌氧薄膜晶体管[J]. 发光学报, 2016,37(1): 50-55 DOI： 10.3788/fgxb20163701.0050.

GAO Ya-na, XU Yun-long, ZHANG Jian-hua etc. Solution Processed HfInZnO Thin Film Transistors with HfSiOx Dielectrics Modified by Al2O3 Films[J]. Chinese Journal of Luminescence, 2016,37(1): 50-55 DOI： 10.3788/fgxb20163701.0050.

摘要

利用溶液法制备了以HfSiO

为绝缘层、HfInZnO为有源层、Al

为界面修饰层的TFT器件。HfSiO

薄膜经Al

薄膜修饰后

薄膜表面粗糙度从0.24 nm降低至0.16 nm。Al

薄膜与HfSiO

薄膜之间的界面接触良好

以Al

为界面修饰层的TFT器件整体性能得到提升

具体表现为:栅极电压正向和反向扫描过程中产生的阈值电压漂移显著减小

器件的阈值电压和亚阈值摆幅降低

迁移率与开关比增大。研究证明

溶液法制备Al

薄膜适合作为改善器件性能的界面修饰层。

Abstract

Solution processed HfInZnO (HIZO) thin film transistors (TFTs) with HfSiO

dielectrics modified by Al

layer were fabricated. After the Al

layer was inserted

the optical transmittance of HfSiO

films was hardly changed and the surface root mean square (RMS) roughness was decreased from 0.24 to 0.16 nm. The excellent surface was benefited to improve the interface properties between dielectrics and semiconductors of HIZO TFTs. Furthermore

the characteristics of thin film transistors were improved. The threshold voltage shift between forward and reverse sweep was decreased obviously. Simultaneously

the threshold voltage and subthreshold voltage were decreased

and the on to off current ratios and mobility were increased. Above all

the experiment results indicate that Al

film is fit for using in TFTs as the interface modification layer to improve TFTs performance.

关键词

Keywords

references

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