Low Power Dissipation 980 nm Single Mode Pumping Source Laser with Wavelength Stabilization

LI Hui; DU Ji-yao; QU Yi; ZHANG Jing; LI Zai-jin; LIU Guo-jun

doi:10.3788/fgxb20163701.0033

您当前的位置：

首页 >

文章列表页 >

Low Power Dissipation 980 nm Single Mode Pumping Source Laser with Wavelength Stabilization

更新时间：2020-08-12

- Low Power Dissipation 980 nm Single Mode Pumping Source Laser with Wavelength Stabilization
- Chinese Journal of Luminescence Vol. 37, Issue 1, Pages: 33-37(2016)
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163701.0033
  CLC： TN248.4
- Received：12 September 2015，
  
  Revised：13 November 2015，
  
  Published：10 January 2016
- 稿件说明：
移动端阅览
李辉, 都继瑶, 曲轶等. 光谱稳定的低功耗980nm单模泵浦源半导体激光器[J]. 发光学报, 2016,37(1): 33-37

LI Hui, DU Ji-yao, QU Yi etc. Low Power Dissipation 980 nm Single Mode Pumping Source Laser with Wavelength Stabilization[J]. Chinese Journal of Luminescence, 2016,37(1): 33-37
李辉, 都继瑶, 曲轶等. 光谱稳定的低功耗980nm单模泵浦源半导体激光器[J]. 发光学报, 2016,37(1): 33-37 DOI： 10.3788/fgxb20163701.0033.

LI Hui, DU Ji-yao, QU Yi etc. Low Power Dissipation 980 nm Single Mode Pumping Source Laser with Wavelength Stabilization[J]. Chinese Journal of Luminescence, 2016,37(1): 33-37 DOI： 10.3788/fgxb20163701.0033.

摘要

由于在很多特殊应用领域要求980 nm泵浦源半导体激光器具有光谱稳定、低功耗等

本文通过对980 nm单模半导体激光器的腔长、腔面反射率及光纤光栅反射率等优化设计

研制出低阈值、高功率980 nm光纤光栅外腔波长稳定半导体激光器。该低功耗、波长稳定的单模半导体激光器

在100 mA工作电流下尾纤输出功率达到51 mW

3 dB带宽为0.16 nm

边模抑制比大于40 dB

器件在250 mA工作电流下

尾纤输出功率达到120 mW。

Abstract

Due to many special applications

the 980 nm pumping source semiconductor lasers should have the characteristics of spectrum stability

low power consumption. Based on the optimization design of a 980 nm single mode semiconductor laser cavity length

cavity reflectivity and fiber Bragg grating reflectivity

the low threshold

high power 980 nm fiber Bragg grating external cavity semiconductor lasers with wavelength stability are developed. The pigtail output power of the low power consumption single mode semiconductor lasers with wavelength stability can reach 51 mW under 100 mA

3 dB bandwidth of 0.16 nm. The side mode suppression ratio (SMRS) is greater than 40 dB. The pigtail output power of the device can reach 120 mW under 250 mA.

关键词

Keywords

references

DUTTA N K, LOPATA J, CHO A Y. Performance characteristics of GaInAs/GaAs large optical cavity quantum well lasers [J]. Electron. Lett., 1991, 27:680-682.

VERDIELL J M, ZIARI M, WELCH D F. Low-loss coupling of 980 nm GaAs laser to cleaved single mode fiber [J]. Electron. Lett., 1996, 32(19):1817-1818.

LIN G, YEN S T, LEE C P, et al.. Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure [J]. IEEE Photon. Technol. Lett., 1996, 8(12):1588-1590.

APOLLONOV V V. 用于高功率激光器的光学元件 [J]. 中国光学, 2013, 6(1):1-8. APOLLONOV V V. Optics for high power lasers [J]. Chin. Opt., 2013, 6(1):1-8.(in English)

徐遵图,杨国文,徐俊英,等. MBE 生长高光功率转换效率InGaAs/GaAs/AlGaAs 应变量子阱激光器 [J]. 半导体学报, 1999, 20(3):194-199. XU Z T, YANG G W, XU J Y, et al.. High power conversion efficiency InGaAs/GaAs/AlGaAs strained layer quantum well lasers grown by MBE [J]. Chin. J. Semicond., 1999, 20(3):194-199.(in Chinese)

YANG G W, XU J Y, XU Z T, et al.. Theoretical investigation on quantum well lasers with extremely low vertical divergence and low threshold current [J]. J. Appl. Phys., 1998, 83(1):8-14.

ZHU X P, XU Z T, ZHANG J M, et al.. A single mode 980 nm InGaAs/GaAs/AlGaAs large optical cavity quantum well laser with low vertical divergence angle [J]. J. Semicond., 2002, 23(4):342-346.

徐遵图,徐俊英,杨国文,等. InGaAs/GaAs/AlGaAs应变量子阱激光器 [J]. 中国激光, 1999, 26(5):7-11. XU Z T, XU J Y, YANG G W, et al.. InGaAs/ AlGaAs strained layer quantum well lasers [J]. Chin. J. Lasers, 1999, 26(5):7-11. (in Chinese)

俞波,盖红星,韩军,等. 应变InGaAs/GaAs量子阱MOCVD生长优化及其在980 nm半导体激光器中的应用 [J]. 量子电子学报, 2005, 22(1):81-84. YU B, GAI H X, HAN J, et al.. Optimization of MOCVD-growth strain InGaAs/GaAs quantum wells and its application for 980 nm LD [J]. Chin. J. Quant. Electron., 2005, 22(1):81-84.(in Chinese)

杜向硕,康志龙,安振峰,等. 光纤光栅外腔半导体激光器锁模特性 [J]. 半导体技术, 2013, 38(9):672-675. DU X S, KANG Z L, AN Z F, et al.. Mode-locked characteristics for fiber grating external cavity semiconductor lasers [J]. Semicond. Technol., 2013, 38(9):672-676. (in Chinese)

刘洋洋,杨瑞霞,袁春生,等. 974 nm半导体激光器的光纤耦合研究 [J]. 中国激光, 2014, 41(11):1102003-1-6. LIU YY,YANG R X, YUAN C S, et al.. Study on fiber coupling for 974 nm semiconductor laser diode [J]. Chin. J. Lasers, 2014, 41(11):1102003-1-6. (in Chinese)

李毅,黄毅泽,王海方,等. 980 nm 半导体激光器双布拉格光纤光栅波长锁定器 [J]. 光学精密工程, 2010, 18(7):1468-1475. LI Y, HUANG Y Z, WANG H F, et al.. Wavelength stabilizer with dual fiber Bragg grating for 980 semiconductor laser[J]. Opt. Precision Eng., 2010, 18(7):1468-1475. (in Chinese)

王立军,彭航宇,张俊. 大功率半导体激光合束进展 [J]. 中国光学, 2015, 8(4):517-534. WANG L J, PENG H Y, ZHANG J. Advance on high power diode laser coupling [J]. Chin. Opt., 2015, 8(4):517-534. (in Chinese)

李再金,李特,芦鹏,等. 980 nm半导体激光器腔面膜钝化新技术 [J]. 发光学报, 2012, 33(5):525-528. LI Z J, LI T, LU P, et al.. The novel passivation method for 980 nm semiconductor laser diode face coating [J]. Chin. J. Lumin., 2012, 33(5):525-528.(in Chinese)

李辉,曲轶,高欣,等. 高性能980 nm 单模半导体激光器 [J]. 兵工学报, 2010, 31(8):1110-1113. LI H, QU Y, GAO X, et al.. High performance 980 nm single mode semiconductor lasers [J]. Acta Armamentarii, 2010, 31(8):1110-1113. (in Chinese)

Views

338

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Development of 808 nm High-power Distributed Feedback Laser Array

Related Author

Xue-feng BAN

Cui-luan WANG

Su-ping LIU

Xiao-yu MA

Xue-feng BAN

Cui-luan WANG

Su-ping LIU

Xiao-yu MA

Related Institution

National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences

School of Materials Science and Optoelectronics, University of Chinese Academy of Sciences

National Engineering Research Center for Optoelectronic devices， Institute of Semiconductors Chinese Academy of Sciences

School of Materials Science and Optoelectronics， University of Chinese Academy of Sciences

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰