Effect of AlN Buffer Layer Prepared by Reactive Magnetron Sputtering on GaN-based LEDs

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Effect of AlN Buffer Layer Prepared by Reactive Magnetron Sputtering on GaN-based LEDs

更新时间：2020-08-12

- Effect of AlN Buffer Layer Prepared by Reactive Magnetron Sputtering on GaN-based LEDs
- Chinese Journal of Luminescence Vol. 36, Issue 12, Pages: 1452-1457(2015)
- 作者机构：
  
  湘能华磊光电股份有限公司,湖南郴州,423000
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153612.1452
  CLC： TN303;TN304
- Received：21 August 2015，
  
  Revised：21 October 2015，
  
  Published：10 December 2015
- 稿件说明：
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农明涛, 苗振林, 梁智勇等. 磁控反应溅射AlN缓冲层对GaN基LED器件性能的影响[J]. 发光学报, 2015,36(12): 1452-1457

NONG Ming-tao, MIAO Zhen-lin, LIANG Zhi-yong etc. Effect of AlN Buffer Layer Prepared by Reactive Magnetron Sputtering on GaN-based LEDs[J]. Chinese Journal of Luminescence, 2015,36(12): 1452-1457
农明涛, 苗振林, 梁智勇等. 磁控反应溅射AlN缓冲层对GaN基LED器件性能的影响[J]. 发光学报, 2015,36(12): 1452-1457 DOI： 10.3788/fgxb20153612.1452.

NONG Ming-tao, MIAO Zhen-lin, LIANG Zhi-yong etc. Effect of AlN Buffer Layer Prepared by Reactive Magnetron Sputtering on GaN-based LEDs[J]. Chinese Journal of Luminescence, 2015,36(12): 1452-1457 DOI： 10.3788/fgxb20153612.1452.

摘要

以直流磁控反应溅射法(RMS)在图形化蓝宝石衬底上制备的AlN薄膜作为缓冲层

采用金属有机化学气相沉积法(MOCVD)外延生长了GaN基LED。与MOCVD生长的低温GaN缓冲层相比

RMS制备的AlN缓冲层具有表面更平整、颗粒更小的形核岛

有利于促进GaN外延的横向生长

减少了形核岛合并时的界面数量和高度差异

降低了缺陷和位错产生的几率。研究结果表明

溅射AlN缓冲层取代传统低温GaN缓冲层后

外延生长的GaN材料具有更高的晶体质量

LED器件在亮度、漏电和抗静电能力等光电特性上均有明显提升。

Abstract

AlN films were prepared on patterned sapphire substrates (PSS) by direct-current reactive magnetron sputtering (RMS) and used as buffer layers. The crystal quality and optical properties of GaN films grown by metal-organic chemical vapor deposition (MOCVD) with AlN buffer layers were investigated. Compared with conventional low temperature GaN buffer layers

the RMS AlN buffer layers have smoother and smaller nucleation islands

which benefits the lateral growth and the coalesce of three-dimensional GaN islands. It is found that GaN-based LEDs with RMS AlN buffer layers have higher light output power

lower electric leakage and stronger electrostatic discharge(ESD) characteristic owning to the lower threading dislocation density (TDD).

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references

Nakamura S. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes [J]. Science, 1998, 281(5379):956-961.

Chen Y, Wang W X, Li Y, et al. High quality GaN layers grown on SiC substrates with AlN buffers by metal organic chemical vapor deposition [J]. Chin. J. Lumin.(发光学报), 2011, 32(9):896-901 (in Chinese).

Wang X L, Wang W X, Jiang Y, et al. Luminescent performances of green InGaN/ GaN MQW LED employing superlattices strain adjusting structures [J]. Chin. J. Lumin.(发光学报), 2011, 32(11):1152-1158 (in Chinese).

Skierbiszewski C, Siekacz M, Turski H, et al. AlGaN-free laser diodes by plasma-assisted molecular beam epitaxy [J]. Appl. Phys. Express, 2012, 5(2):022104-1-3.

Chen X, Xing Y H, Han J, et al. Influence of Al composition on electrical and structural properties of Al<em>xGa1-x N/AlN/GaN HEMT materials grown by MOCVD [J]. Chin. J. Lumin.(发光学报), 2013, 34(12):1646-1650 (in Chinese).

Chen W C, Tang H L, Luo P, et al. Research progress of substrate materials used for GaN-based light emitting diodes [J]. Acta Phys. Sinica (物理学报), 2014, 63(6):8103-8103 (in Chinese).

Han N, Park Y J, Han M, et al. Threading dislocation reduction in epitaxial GaN using V-groove patterned sapphire substrate with embedded silica nanospheres [J]. Mater. Lett., 2014, 123:97-100.

Huang H M, Yang G, Wang H, et al. Improvement of GaN thin-film quality grown on patterned sapphire substrate by high-temperature pre-growth treatment [J]. Chin. J. Lumin.(发光学报), 2014, 35(8):980-985 (in Chinese).

Nakamura S. GaN growth using GaN buffer layer [J]. Jpn. J. Appl. Phys. B, 1991, 30:1705-1707.

Shin H Y, Kwon S K, Chang Y I, et al. Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate [J]. J. Cryst. Growth, 2009, 311(17):4167-4170.

Huang X H, Liu J P, Kong J J, et al. High-efficiency InGaN-based LEDs grown on patterned sapphire substrates [J]. Opt. Express, 2011, S4:A949-A955.

Kim T H, Ru H, Noh Y K, et al. Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study [J]. J. Appl. Phys., 2010, 107(6):063501-1-4.

Sugahara T, Hao M, Wang T, et al. Role of dislocation in InGaN phase separation. [J]. Jpn. J. Appl. Phys., 1998, 37:L1195-L1195.

Guo R H, Lu T P, Jia Z G, et al. Effect of interface nucleation time of the GaN nucleation layer on the crystal quality of GaN film [J]. Acta Phys. Sinica (物理学报), 2015, 64(12):127305-1-5 (in Chinese).

Yi M S, Lee H H, Kim D J, et al. Effects of growth temperature on GaN nucleation layers [J]. Appl. Phys. Lett., 1999, 75(15):2187-2189.

Doverspike K, Rowland L B, Gaskill D K, et al. The effect of GaN and AlN buffer layers on GaN film properties grown on both c-plane and a-plane sapphire [J]. J. Electron. Mater., 1995, 24:269-273.

Yang T, Uchida K, Mishima T, et al. Control of initial nucleation by reducing the Ⅴ/Ⅲ ratio during the early stages of GaN growth [J]. Phys. Stat. Sol.(a), 2000, 180:45-50.

Kim D J, Moon Y T, Ahn K S, et al. In situ normal incidence reflectance study on the effect of growth rate of nucleation layer on GaN by metal-organic chemical vapor deposition [J]. J. Vac. Sci. Technol. B, 2000, 18:140-143.

Wang L, Wang L, Ren F, et al. GaN grown on AlN/sapphire templates [J]. Acta Phys. Sinica (物理学报), 2010, 59(11):8021-8025 (in Chinese).

Lee J H, Lee D Y, Oh B W, et al. Comparison of InGaN-based LEDs grown on conventional sapphire and cone-shape-patterned sapphire substrate [J]. IEEE Trans. Electron. Dev., 2010, 57(1):157-163.

Liang M, Wang G H, Li H J, et al. Low threading dislocation density in GaN films grown on patterned sapphire substrates [J]. J. Semicond.(半导体学报), 2012, 33(11):113002-1-5 (in English).

Kang D H, Song J C, Shim B Y, et al. Characteristic comparison of GaN grown on patterned sapphire substrates following growth time [J]. Jpn. J. Appl. Phys., 2007, 46(4B):2563-2566.

Kong J, Feng M X, Cai J, et al. GaN grown on nano-patterned sapphire substrates [J]. J. Semicond.(半导体学报), 2015, 36(4): 043003-1-5 (in English).

Le L C, Zhao D G, Jiang D S, et al. Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes [J]. Appl. Phys. Lett., 2012, 101(25):252110-1-4.

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