Influence of Thermal Cracking Selenium on The Open-circuit Voltage of CIGS Solar Cells

LI Guang-min; LIU Wei; LIN Shu-ping; LI Xiao-dong; ZHOU Zhi-qiang; HE Qing; ZHANG Yi; LIU F

doi:10.3788/fgxb20153611.1289

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Influence of Thermal Cracking Selenium on The Open-circuit Voltage of CIGS Solar Cells

更新时间：2020-08-12

- Influence of Thermal Cracking Selenium on The Open-circuit Voltage of CIGS Solar Cells
- Chinese Journal of Luminescence Vol. 36, Issue 11, Pages: 1289-1293(2015)
- 作者机构：
  
  1. 天津城建大学理学院应用物理系, 天津 300084
  2. 南开大学电子信息与光学工程学院光电子薄膜与器件研究所天津,300071
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153611.1289
  CLC： O484.4
- Received：01 August 2015，
  
  Revised：16 September 2015，
  
  Published：10 November 2015
- 稿件说明：
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李光旻, 刘玮, 林舒平等. 热裂解活化硒对CIGS太阳电池开路电压的影响[J]. 发光学报, 2015,36(11): 1289-1293

LI Guang-min, LIU Wei, LIN Shu-ping etc. Influence of Thermal Cracking Selenium on The Open-circuit Voltage of CIGS Solar Cells[J]. Chinese Journal of Luminescence, 2015,36(11): 1289-1293
李光旻, 刘玮, 林舒平等. 热裂解活化硒对CIGS太阳电池开路电压的影响[J]. 发光学报, 2015,36(11): 1289-1293 DOI： 10.3788/fgxb20153611.1289.

LI Guang-min, LIU Wei, LIN Shu-ping etc. Influence of Thermal Cracking Selenium on The Open-circuit Voltage of CIGS Solar Cells[J]. Chinese Journal of Luminescence, 2015,36(11): 1289-1293 DOI： 10.3788/fgxb20153611.1289.

摘要

考察了通过自主研发的高温热裂解辅助硒化装置所产生的高活性硒对CIGS薄膜结构和器件性能的影响.通过调节高温裂解系统的温度可以有效调节不同的硒活性.研究发现

第一台阶HC-Se气氛可以提高CIGS薄膜表面的Ga含量

使得CIGS薄膜内的Ga分布更加平缓

进而提高CIGS薄膜表面禁带宽度.而且HC-Se气氛可以消除CIGS"两相分离"现象.两种因素的共同作用使得CIGS薄膜太阳电池的开路电压提高了34.6%.电池转换效率从6.02%提升至8.76%

增长了45.5%.

Abstract

The influence of cracking selenium on the structure and device parameters of Cu(In

)-Se

(CIGS) thin films was investigated. The activity of cracked selenium can be controlled by moderating the temperature of thermal cracking system employed in our self-designed selenization furnace. The HC-Se atmosphere can enhance the Ga concentration on the film surface and increase the band-gap energy of the CIGS film surface. In addition

HC-Se atmosphere can alleviate the "phase separation". Consequently

value of the solar cell increases about 34.6%. The device conversion efficiency using the novel thermal-cracking system increases by about 45.5% from 6.02% to 8.76%.

关键词

Keywords

references

Liu W, Tian J G, He Q, et al. The influence of alloy phases in the precursors on the selenization reaction mechanisms [J]. J. Phys. D: Appl. Phys., 2009, 42(12):125303-1-6.

Marudachalam M, Birkmire R W, Hichri H, et al. Phases, morphology, and diffusion in CuInxGa1-xSe2 thin films [J]. J. Appl. Phys., 1997, 82:2896-2905.

Niki S, Contreras M A, Repins I, et al. CIGS absorbers and processes [J]. Prog. Photovolt: Res. Appl., 2010, 18:453-466.

Kawamura M, Fujita T, Yamada A, et al. Cu(In, Ga)Se2 thin-film solar cells grown with cracked selenium [J]. J. Cryst. Growth, 2009, 311:753-756.

Chang C H. Processing and Characterization of Copper Indium Selenide for Photovoltaic Applications [D]. Florida: University of Florida, 1999:41-51.

Wei S H, Zhang S B, Zunger A. Microscopic origin of the phenomenological equilibrium "doping limit rule" in n-type Ⅲ-Ⅴ semiconductors [J]. Phys. Rev. Lett., 2000, 84:1232-1236.

Lundberg O, Edoff M, Stolt L. The effect of Ga-grading in CIGS thin film solar cells [J]. Thin Solid Film, 2005, 480-481:520-525.

Shafarman W N, Klenk R, McCandless B E. Device and material characterization of Cu(In, Ga)Se2 solar cells with increasing band gap [J]. J. Appl. Phys., 1996, 79:7324-7328.

Al-bassam A A I. X-ray analysis and band gap measurement of CIGS film [J]. Mater. Chem. Phys., 2000, 62:175-178.

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