Structure and Electrical Properties of InAs/GaInSb Superlattice Film

CHEN Dao-ming; GUO Feng-yun; ZHANG Xin-jian; BAI Gui-yuan; ZHAO Lian-cheng

doi:10.3788/fgxb20153611.1252

您当前的位置：

首页 >

文章列表页 >

Structure and Electrical Properties of InAs/GaInSb Superlattice Film

更新时间：2020-08-12

- Structure and Electrical Properties of InAs/GaInSb Superlattice Film
- Chinese Journal of Luminescence Vol. 36, Issue 11, Pages: 1252-1257(2015)
- 作者机构：
  
  1. 中国工程物理研究院材料研究所, 四川江油,621907
  2. 哈尔滨工业大学材料科学与工程学院,黑龙江哈尔滨,150001
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153611.1252
  CLC： O484.4
- Received：13 July 2015，
  
  Revised：18 September 2015，
  
  Published：10 November 2015
- 稿件说明：
移动端阅览
陈道明, 国凤云, 张新建等. InAs/GaInSb超晶格薄膜结构与电学性能[J]. 发光学报, 2015,36(11): 1252-1257

CHEN Dao-ming, GUO Feng-yun, ZHANG Xin-jian etc. Structure and Electrical Properties of InAs/GaInSb Superlattice Film[J]. Chinese Journal of Luminescence, 2015,36(11): 1252-1257
陈道明, 国凤云, 张新建等. InAs/GaInSb超晶格薄膜结构与电学性能[J]. 发光学报, 2015,36(11): 1252-1257 DOI： 10.3788/fgxb20153611.1252.

CHEN Dao-ming, GUO Feng-yun, ZHANG Xin-jian etc. Structure and Electrical Properties of InAs/GaInSb Superlattice Film[J]. Chinese Journal of Luminescence, 2015,36(11): 1252-1257 DOI： 10.3788/fgxb20153611.1252.

摘要

采用分子束外延(MBE)方法

调节生长温度、Ⅴ/Ⅲ束流比等参数在(001)GaAs衬底上生长了InAs/GaInSb超晶格薄膜.结果表明:InAs/GaInSb超晶格薄膜的最佳生长温度在385~395 ℃

Ⅴ/Ⅲ束流比为5.7 :1~8.7 :1.高能电子衍射仪(RHEED)原位观测到清晰的GaAs层(42)、GaSb层(13)和InAs层(12)再构衍射条纹.获得的超晶格薄膜结构质量较好.随着温度的升高

材料的载流子浓度和迁移率均上升.

Abstract

InAs/GaInSb superlattice material was grown on (001)GaAs substrates by molecular beam epitaxy (MBE)

adjusting the growth temperature and Ⅴ/Ⅲ beam ratio. The results show that the growth temperature is in the range of 385 ℃ and 395 ℃

the Ⅴ/Ⅲ beam ratio is from 5.7 :1 to 8.7 :1. RHEED

situ

observations to the GaAs layer (42)

GaSb layer (13) and InAs layer (12) show clarity reconstructed diffraction fringes

the quality of superlattice structure is better

and with increasing temperature

the carrier concentration and mobility of the material are increased.

关键词

Keywords

references

Smith D L,Maihiot C.Proposal for strained type Ⅱ superlattice infrared detectors [J]. J. Appl. Phys., 1987,62:2545-2548.

Youngdale E R, Meyer J R, Hoffman C A, et al. Auger lifetime enhancement in In-GaInSb superlattices [J]. Appl. Phys. Lett., 1994, 64(21):3160-3162.

Bandara S V, Gunapala S D, Liuetal J K. 10-16 m broadband quantum well infrared photodetector [J]. Appl. Phys. Lett., 1998, 72(17):2427-2429.

Li S W, Miao G Q, Jiang H, et al. Vertically stacked, self-assembled MBE-grown InAs quantum dots and application of field effect transistor [J]. Chin. J. Lumin.(发光学报), 2002, 23(6):554-558 (in Chinese).

Xu H X, Wang H L, Yan J Y, et al. Gain and linewidth enhancement factor of InAs/GaAs quantum-dot laser diodes [J]. Chin. J. Lumin.(发光学报), 2015, 36(5):567-571 (in Chinese).

Young M H, Chow D H, Hunter A T.Recent advances in Gal-xInxSb/InAs superlattice IR detector materials[J]. Appl. Surf. Sci., 1998, 123-124:395-399.

Qiu Y X, Li M C, Zhao L C.The interface structure of InAs/GaInSb strained-layer superlattice [J]. J. Funct. Mater.(功能材料), 2005, 36(9):1316-1319 (in Chinese).

Piotrowski J, Rogalski A. Uncooled long wave length infrared photon detectors [J]. Infrared Phys. Technol., 2004, 46:115-131.

Zakharova A A, Semenikhin I A, Chao K A.Optical anisotropy of InAs/GaSb broken-gap quantum wells [J]. J. Experiment. Theoret. Phys., 2012, 114(5):731-737.

Wang D, Donetsky D, Jung S, et al. Carrier lifetime measurements in long-wave infrared InAs/GaSb superlattices under low excitation conditions [J]. J. Electron. Mater., 2012, 41(11):3027-3030.

Wang D J, Kuang H P, Zhou G, et al. Design and implementation of data acquisition system for IRFPA detector [J]. Chin. J. Liq. Cryst. Disp.(液晶与显示), 2009, 24(3):429-432(in Chinese).

Chen J., Wang Q S. Recent progress of infrared upconversion device based on the integration of OLED [J]. Chin. Opt.(中国光学), 2015, 8(1):17-27 (in Chinese).

Zhao L C. The interface structure and photoelectric properties in infrared photoelectric thin films materials [J]. China Surf. Eng.(中国表面工程), 2009, 22(3):1-6 (in Chinese).

Mohseni H. InAs/GaSb Superlattices for Infrared Detectors TypeⅡ [D]. Northwestern University Dissertation, 2001:48.

Zhang J M, Feng G B, Yang P L, et al. Thermal issues of photoconductive HgCdTe detector in mid-infrared laser parameter measurement [J]. Opt. Precision Eng.(光学精密工程), 2015, 23(1):22-30 (in Chinese).

Views

386

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Advances in Epitaxial Growth, Structural and Optical Properties of Antimonide-based Type-Ⅱ Superlattices

Temperature Field Distribution and Transmittance Characteristics of VO₂ Films Irradiated by Laser

Highly-sensitive Sb-based Quantum-well 2DEG-Hall Device

High Sensitivity Hall Devices with AlSb/InAs Quantum Well Structure

Growth and Photoluminescence Characteristics of InGaNAs/GaAs QW with High In Composition

Related Author

Sheng-da LIU

Dan FANG

Xuan FANG

Hong-bin ZHAO

Cheng-lin LI

Deng-kui WANG

Dong-bo WANG

Xiao-hua WANG

Related Institution

State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals

School of Science and Engineering, The Chinese University of Hong Kong(Shenzhen)

State Key Laboratory of High Power Semiconductor Laser, College of Science, Changchun University of Science and Technology

Electronic Countermeasures Institute of National University of Defense Technology

Infrared and Low Temperature Plasma Key Laboratory of Anhui Province

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰