Growth of ZnO Single Crystal and BeZnO Alloy and Ultraviolet Detector

WANG Yu-chao; ZHANG Quan-lin; SU Long-xing; SHEN Zheng-chuan; WU Tian-zhun; TANG Zi-kang

doi:10.3788/fgxb20153611.1233

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Growth of ZnO Single Crystal and BeZnO Alloy and Ultraviolet Detector

更新时间：2020-08-12

- Growth of ZnO Single Crystal and BeZnO Alloy and Ultraviolet Detector
- Chinese Journal of Luminescence Vol. 36, Issue 11, Pages: 1233-1239(2015)
- 作者机构：
  
  1. 香港科技大学物理系,香港,999077
  2. 西昌卫星发射中心, 四川西昌,615000
  3. 中国科学院深圳先进技术研究院,广东深圳,518055
  4. 中山大学理工学院光电材料与技术国家重点实验室,广东广州,510000
- 作者简介：
- 基金信息：
  
  973"
- DOI：10.3788/fgxb20153611.1233
  CLC： O484.4
- Received：07 July 2015，
  
  Revised：11 August 2015，
  
  Published：10 November 2015
- 稿件说明：
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王玉超, 张权林, 苏龙兴等. ZnO单晶和BeZnO合金的生长及其紫外探测器研究[J]. 发光学报, 2015,36(11): 1233-1239

WANG Yu-chao, ZHANG Quan-lin, SU Long-xing etc. Growth of ZnO Single Crystal and BeZnO Alloy and Ultraviolet Detector[J]. Chinese Journal of Luminescence, 2015,36(11): 1233-1239
王玉超, 张权林, 苏龙兴等. ZnO单晶和BeZnO合金的生长及其紫外探测器研究[J]. 发光学报, 2015,36(11): 1233-1239 DOI： 10.3788/fgxb20153611.1233.

WANG Yu-chao, ZHANG Quan-lin, SU Long-xing etc. Growth of ZnO Single Crystal and BeZnO Alloy and Ultraviolet Detector[J]. Chinese Journal of Luminescence, 2015,36(11): 1233-1239 DOI： 10.3788/fgxb20153611.1233.

摘要

用分子束外延(MBE)的方法在c面蓝宝石衬底上生长出了高质量的ZnO单晶薄膜和Be

1-x

O合金薄膜.X射线光电子能谱(XPS)测试结果表明

合金材料中Be元素的摩尔分数分别为1.8%、4.9%、8.0%和15.3%.在此基础上制备了ZnO基和Be

1-x

O基的金属-半导体-金属(MSM)结构紫外探测器.ZnO单晶探测器的响应波长为375 nm

在1 V电压下

350 nm处的光响应度高达43 A/W

光电流和暗电流之比达到10

量级.在Be

1-x

O基紫外探测器中

其截止响应波长随着合金中Be含量的增加逐渐蓝移

其中Be

0.153

-Zn

0.847

O 合金探测器的截止响应波长为366 nm

紫外波段和可见波段的光电流之比达到2~3个数量级

具有良好的信噪比.此外

提出了氧气等离子体表面处理降低探测器暗电流的方法

并使ZnO单晶探测器的暗电流降低了4个数量级.

Abstract

To develop ZnO-based deep ultraviolet (UV) detectors

high-quality ZnO and Be

1-x

O films were grown on c-plane of sapphire substrates using plasma-assisted molecular beam epitaxy (PAMBE). X-ray photoelectron spectroscopy (XPS) tests showed that the mole fractions of Be in Be

1-x

O alloys followed by 1.8%

4.9%

8.0%

15.3%

respectively. Prototypes of ZnO ultraviolet detectors with the metal-semiconductor-metal (MSM) structure were fabricated and tested

which showed a large on/off ratio and high responsivity

as well as the demonstration of blue-shift tuning of responsivity for Be

1-x

O-based detectors with Be doping. The cut-off response wavelength of Be

0.153

0.847

O detectors is 366 nm

moreover

the device has good signal-to-noise up to 2-3 orders of magnitude. These achievements should provide valuable insights and experiences for the ZnO-based materials and devices. Moreover

oxygen plasma surface treatment was studied to probe the influence on dark current. By appropriate surface treatment

the dark current of ZnO detector can be reduced by 4 orders of magnitude.

关键词

Keywords

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