Li He, LIANG Jing-qiu, LIANG Zhong-zhu etc. Thermal Field Analysis and Heat Dissipation Design of AlGaInP-based LED Light Emitting Array[J]. Chinese Journal of Luminescence, 2015,36(10): 1212-1219
Li He, LIANG Jing-qiu, LIANG Zhong-zhu etc. Thermal Field Analysis and Heat Dissipation Design of AlGaInP-based LED Light Emitting Array[J]. Chinese Journal of Luminescence, 2015,36(10): 1212-1219 DOI: 10.3788/fgxb20153610.1212.
Thermal Field Analysis and Heat Dissipation Design of AlGaInP-based LED Light Emitting Array
A finite element thermal analysis model of 55 AlGaInP-based LED microarray was established and simplified according to the calculation results. The results show that the simplified model and original model have the same temperature distribution
relative error of simplified model is 0.8% at 1.5 s. Using the simplified model
the temperature distribution of the chip with the size of 10 mm10 mm100 m and 10
4
units was calculated
and the center temperature of chip reached 360.6 ℃ at 1.5 s. In order to solve the problem of heat dissipation
two finned radiators were designed
and the impacts of radiator structure
adhesive material
and number of fins on the temperature of chip were simulated.
关键词
Keywords
references
Liang J Q. Research advances in micro-LED display devices [J]. OME Information (光机电信息), 2010, 27(12):21-27 (in Chinese).
Li K H, Cheung Y F. Optical and thermal analyses of thin-film hexagonal micro-mesh light-emitting diodes [J]. IEEE Phton. Technol. Lett., 2013, 25(4):374-377.
Kim M S, Lee H K, Yu J S. Device characteristics and thermal analysis of AlGaInP-based red monolithic light-emitting diode arrays [J]. Semicond. Sci. Technol., 2013, 28(2):025005-1-8.
Cho J Y, Byeon K J. Improved AlGaInP vertical emittinglight-emitting diodesusingdirect printing [J]. Opt. Lett., 2013, 38(9):1573-1575.
Pan J W, Tsai P J. Light extraction efficiency analysis of GaN-based light-emitting diodes with nanopatterned sapphire substrates [J]. Appl. Opt., 2013, 52(7):1358-1367.
Dai Q, Shan Q F, Wang J, et al. Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes [J]. Appl. Phys. Lett., 2010, 97(13):133507-1-3.
Guo L X, Zuo D W, Sun Y L, et al. Heat dissipation technology of LED and its rsearch process [J]. China Illumin. Eng. J.(照明工程学报), 2013, 24(4): 64-70 (in Chinese).
Shabany Y. Heat Transfer: Thermal Management of Electronics [M]. Beijing: China Machine Press, 2013:135-158 (in Chinese).
Liang J Q, Li J, Wang W B, et al. Design and fabrication of AlGaInP LED array [J]. Chin. J. Liq. Cryst. Disp.(液晶与显示), 2006, 21(6):604-608 (in Chinese).
Tian C, Liang J Q, Liang Z Z, et al. Design and experiment AlGaInP micro-LED arrays with double strip electrode [J]. Chin. J. Lumin.(发光学报), 2013, 34(11):840-845 (in Chinese).
Bao X Z, Liang J Q, Liang Z Z, et al. Effect of AlGaInP-LED arrays units side-reflection on light output efficiency [J]. Chin. J. Liq. Cryst. Disp.(液晶与显示), 2013, 28(5):726-731 (in Chinese).
Dai W F. Transient thermal analysis of high power LED package [J]. Semicond. Optoelectron.(半导体光电), 2008, 29 (3):324-328 (in Chinese).
Hu L M, Li Z J, Qin L, et al. Thermal analysis of high-power, high-duty-cycle laser diode array [J]. Acta Optica Sinica (光学学报), 2010, 30(4):1055-1060 (in Chinese).
Zhang J W, Ning Y Q, Zhang X, et al. Analysis of the thermal model based on the carrier injection mechanisms within the semiconductor laser [J]. Chin. J. Laser.(中国激光), 2012, 39(10):1002003-1-6 (in Chinese).
Zhang J F, Wang C L, Wu Y P, et al. Application of ANSYS in heat-analysis [J]. Energy Metallurg. Ind., 2004, 23(5):9-12.
Zhou C Y. Study on LabVIEW-based Measurement of Junction Temperature of LED and Its Photoelectric Properties[D]. Qingdao: Ocean University of China, 2011:61-62 (in Chinese).
Liu X. Reliability Research of LED Road Lamp Design Technology[D]. Shenyang: Shenyang Ligong University, 2012:36-66 (in Chinese).