Controllable Growth of High Quality ZnO Thin Film on c-sapphire

ZHANG Quan-lin; SU Long-xing; WU Tian-zhun; WANG Yu-chao; ZHU Yuan; CHEN Ming-ming; GUI Xu

doi:10.3788/fgxb20153610.1171

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Controllable Growth of High Quality ZnO Thin Film on c-sapphire

更新时间：2020-08-12

- Controllable Growth of High Quality ZnO Thin Film on c-sapphire
- Chinese Journal of Luminescence Vol. 36, Issue 10, Pages: 1171-1177(2015)
- 作者机构：
  
  1. 中山大学理工学院光电材料与技术国家重点实验室, 广东广州 510000
  2. 中国科学院深圳先进技术研究院,广东深圳,518055
  3. 西昌卫星发射中心, 四川西昌,615000
  4. 香港科技大学物理系,香港,999077
- 作者简介：
- 基金信息：
  
  "973"
- DOI：10.3788/fgxb20153610.1171
  CLC： O484.4
- Received：13 July 2015，
  
  Revised：17 August 2015，
  
  Published：10 October 2015
- 稿件说明：
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张权林, 苏龙兴, 吴天准等. 在c-面蓝宝石上控制生长高质量的ZnO单晶薄膜[J]. 发光学报, 2015,36(10): 1171-1177

ZHANG Quan-lin, SU Long-xing, WU Tian-zhun etc. Controllable Growth of High Quality ZnO Thin Film on c-sapphire[J]. Chinese Journal of Luminescence, 2015,36(10): 1171-1177
张权林, 苏龙兴, 吴天准等. 在c-面蓝宝石上控制生长高质量的ZnO单晶薄膜[J]. 发光学报, 2015,36(10): 1171-1177 DOI： 10.3788/fgxb20153610.1171.

ZHANG Quan-lin, SU Long-xing, WU Tian-zhun etc. Controllable Growth of High Quality ZnO Thin Film on c-sapphire[J]. Chinese Journal of Luminescence, 2015,36(10): 1171-1177 DOI： 10.3788/fgxb20153610.1171.

摘要

利用MgO和低温ZnO的缓冲层技术

在

面蓝宝石衬底上用等离子体辅助分子束外延(P-MBE)的方法生长了高质量的ZnO单晶薄膜。通过XRD测试

ZnO薄膜样品具有

轴方向的择优取向

其(002)方向摇摆曲线的半高宽(FWHM)仅为68.4 arcsec

(102)方向摇摆曲线的半高宽(FWHM)为1 150 arcsec

显示了外延薄膜极高的晶体质量。另外从扫描电子显微测试结果和原子力显微测试结果来看

ZnO薄膜具有极为平整的表面

3 m3 m面积内的均方根粗糙度仅为0.842 nm

接近原子级的平整。拉曼光谱(Raman)和荧光光谱(PL)测试结果显示

ZnO薄膜样品内部的应力基本释放

而且具有极低的点缺陷密度。高质量ZnO单晶薄膜的实现为ZnO基的光电器件的制备提供了坚实的基础。

Abstract

High quality ZnO thin film was obtained on

-sapphire substrate by using a technique of plasma assisted molecular beam epitaxy (P-MBE)

in which MgO and low temperature ZnO are used as buffer layers. High-resolution XRD measurement shows the full width at half maximum (FWHM) of (002) and (102) are only 68.4 and 1 150 arcsec

respectively. In the meantime

atomically smooth surface with root mean square (RMS) surface roughness of 0.842 nm is realized. In addition

Raman and photoluminescence (PL) measurements show that ZnO layer has extremely low stress level and defect density. The realization of high quality ZnO thin film pays a good way for the application of ZnO-based optoelectronic devices.

关键词

Keywords

references

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