AlGaN and Graphene Based UV-IR Dual-color Detectors

LIU Yi-han; CAO Wei; LI Shao-juan; LI Yang; SUN Shi-chuang; FU Kai; CHEN Chang-qing; ZHANG

doi:10.3788/fgxb20153610.1167

您当前的位置：

首页 >

文章列表页 >

AlGaN and Graphene Based UV-IR Dual-color Detectors

更新时间：2020-08-12

- AlGaN and Graphene Based UV-IR Dual-color Detectors
- Chinese Journal of Luminescence Vol. 36, Issue 10, Pages: 1167-1170(2015)
- 作者机构：
  
  1. 哈尔滨理工大学测控技术与通信工程学院, 黑龙江哈尔滨 150080
  2. 中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州,215123
  3. 苏州大学功能纳米与软物质研究院, 江苏苏州 215123
  4. 华中科技大学武汉光电国家实验室,湖北武汉,430000
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153610.1167
  CLC： TN23;TN215
- Received：19 July 2015，
  
  Revised：07 September 2015，
  
  Published：10 October 2015
- 稿件说明：
移动端阅览
刘翌寒, 曹伟, 李绍娟等. 一种基于AlGaN和石墨烯的紫外-红外双色探测器[J]. 发光学报, 2015,36(10): 1167-1170

LIU Yi-han, CAO Wei, LI Shao-juan etc. AlGaN and Graphene Based UV-IR Dual-color Detectors[J]. Chinese Journal of Luminescence, 2015,36(10): 1167-1170
刘翌寒, 曹伟, 李绍娟等. 一种基于AlGaN和石墨烯的紫外-红外双色探测器[J]. 发光学报, 2015,36(10): 1167-1170 DOI： 10.3788/fgxb20153610.1167.

LIU Yi-han, CAO Wei, LI Shao-juan etc. AlGaN and Graphene Based UV-IR Dual-color Detectors[J]. Chinese Journal of Luminescence, 2015,36(10): 1167-1170 DOI： 10.3788/fgxb20153610.1167.

摘要

通过MOCVD和CVD生长技术

利用高Al组分AlGaN和单层石墨烯材料进行纵向集成

成功制备了日盲紫外-近红外双色探测器。在工作温度为室温、调制频率为209 Hz以及工作电压分别为10 V和5 V的工作条件下

所制备的双色探测器在紫外波段263 nm处的响应度为5.9 mA/W

在近红外波段1.15 m处的响应度为0.67 mA/W

并且探测器的响应度均随着工作电压的增加而增大。

Abstract

Employing MOCVD and CVD growth technique

the solar blind ultraviolet-near infrared dual-color detectors were successfully fabricated based on AlGaN with high Al component and single-layer graphene materials by vertical integration. The typical response of the dual color detectors in the ultraviolet band at 263 nm is 5.9 mA/W

and that in the near infrared band at 1.15 m is 0.67 mA/W

under the operating condition of room temperature

the modulation frequency of 209 Hz

and the operating voltage of 10 V and 5 V

respectively. Besides

the responses of the two types of detectors will increase with the increase of operating voltage.

关键词

Keywords

references

Hofstetter D, Theron R, Baumann E, et al. Monolithically integrated AlGaN/GaN/AIN-based solar-blind ultraviolet and near-infrared detectors [J]. Electron. Lett., 2008, 44(16):986-988.

Ariyawansa G, Rinzan M B M, Strassburg M, et al. GaN/AlGaN heterojunction infrared detector responding in 8-14 and 20-70 m ranges [J]. Appl. Phys. Lett., 2006, 89(14):141122-1-3 .

Shao J F, Perera A G U, Jayaweera P V V. Low-cost UV-IR dual band detector using nonporous ZnO film sensitized by PbS quantum dots [J]. Chin. Phys. Lett., 2010, 27(2):260-262 .

Zhang Y Z, Liu T, Meng B, et al. Broadband high photoresponse from pure monolayer graphene photodetector [J]. Nat. Commun., 2013, 4(1):8-11.

Lemme M C, Koppens F H L, Falk A L, et al. Gate-activated photoresponse in a graphene p-n junction [J]. Nano Lett., 2011, 11(10):4134-4137.

Gabor N M, Song J C W, Ma Q, et al. Hot carrier-assisted intrinsic photoresponse in grapheme [J]. Science, 2011, 334(6056):648-652.

Furchi M, Urich A, Pospischil A, et al. Microcavity-integrated graphene photodetector [J]. Nano Lett., 2012, 12(6): 2773-2777.

Withers F, Bointon T H, Craciun M F, et al. All-graphene photodetectors [J]. Acs Nano, 2013, 7(6):5052-5057.

Tsuchiya T, Terabe K, Aono M. In situ and non-volatile bandgap tuning of multilayer graphene oxide in an all-solid-state electric double-layer transistor [J]. Adv. Mater., 2014, 26(7):1087-1091.

Ferguson I, Tran C A, Karlicek R F, et al. GaN and AlGaN metal-semiconductor-metal photodetectors [J]. Mater. Sci. Eng. B, 1997, 50(1-3):311-314.

Huang Y, Chen D J, Lu H, et al. Photocurrent characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-metal photodetectors [J]. Appl. Phys. Lett., 2010, 96(24):243503-1-4 .

Views

160

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Design and Optimization of Highly Efficient Light Extraction Encapsulation for Deep Ultraviolet LEDs

Mechanism and Regulation of Light Absorption in Mid-infrared Band Based on Hexagonal Boron Nitride Phonon Polariton Coupling Enhancement

Mid Infrared Er³⁺∶ZBLAN Mode-locked Laser and Wavelength Tunable Performance Based on Graphene/WS₂ Saturated Absorber

AlGaN Based Deep Ultraviolet LED for Inactivating Coxsackie Virus

AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer

Related Author

KANG Wenyu

YIN Jun

HUANG Jiaxin

XIANG Leilei

KANG Junyong

FAN Dashuo

CHENG Yu’ang

CHEN Yang

Related Institution

Future Display Institute in Xiamen， Pen-Tung Sah Institute of Micro-Nano Science and Technology， College of Physical Science and Technology， Xiamen University

Institute of Optics and Electronics， Chinese Academy of Sciences

Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences

Institute of Optoelectronic Materials and Devices， Hangzhou College of Optics and Electronic Technology， China Jiliang University

Shanghai Institute of Applied Physics， Chinese Academy of Sciences

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰