Influence of Indium-tin Oxide Reutilization on The Performance of Organic Light-emitting Devices

LIN Yang; CHEN Chang-bo; ZHANG Hao; CHEN Guo; XU Tao; WEI Bin

doi:10.3788/fgxb20153610.1156

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Influence of Indium-tin Oxide Reutilization on The Performance of Organic Light-emitting Devices

更新时间：2020-08-12

- Influence of Indium-tin Oxide Reutilization on The Performance of Organic Light-emitting Devices
- Chinese Journal of Luminescence Vol. 36, Issue 10, Pages: 1156-1161(2015)
- 作者机构：
  
  上海大学新型显示技术及应用集成教育部重点实验室, 上海 200072
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153610.1156
  CLC： TN383+.1
- Received：23 July 2015，
  
  Revised：24 August 2015，
  
  Published：10 October 2015
- 稿件说明：
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林洋, 陈长博, 张浩等. ITO再生处理对有机电致发光器件特性的影响[J]. 发光学报, 2015,36(10): 1156-1161

LIN Yang, CHEN Chang-bo, ZHANG Hao etc. Influence of Indium-tin Oxide Reutilization on The Performance of Organic Light-emitting Devices[J]. Chinese Journal of Luminescence, 2015,36(10): 1156-1161
林洋, 陈长博, 张浩等. ITO再生处理对有机电致发光器件特性的影响[J]. 发光学报, 2015,36(10): 1156-1161 DOI： 10.3788/fgxb20153610.1156.

LIN Yang, CHEN Chang-bo, ZHANG Hao etc. Influence of Indium-tin Oxide Reutilization on The Performance of Organic Light-emitting Devices[J]. Chinese Journal of Luminescence, 2015,36(10): 1156-1161 DOI： 10.3788/fgxb20153610.1156.

摘要

分别采用NaOH和HCl溶液对废旧氧化铟锡(ITO)基板进行再生处理

用原子力显微镜(AFM)观测了处理后的ITO表面形貌

并基于再生处理过的ITO制备了有机电致发光器件(OLED)

系统研究了器件的性能。结果表明

上述方法可以有效去除废旧ITO残留的铝电极并改变其表面的化学结构

提高了器件的特性

尤其以NaOH单次处理最为有效。以此制备的OLED器件电流效率达到12.08 cd/A

较之未回收利用的新ITO所制备的器件提高了14.7%;外量子效率达到5.23%

提高了11.7%。另外

经不同方法处理后

器件中生色团与生色团之间、生色团与助色团之间的空间位阻增大

器件发光光谱肩峰效应增强。

Abstract

NaOH solution and HCl solution were used to recycle the used indium-tin oxide (ITO) substrate. The treated surface was then observed by using atomic force microscopy (AFM)

while organic light-emitting devices (OLEDs) were fabricated with the recycled ITO to study the influence of reutilization on the performance of OLED. The results show that such treatments can efficiently remove the residual aluminum electrodes on the used ITO and change the chemical composition of the surface

especially by the NaOH treatment. OLED based on such recycled ITO can achieve a current efficiency of 12.08% with an increase of 14.7% compared with that based on new ITO

while the external quantum efficiency reached 5.23% with an increase of 11.7%. In addition

the sterically hindered between the chromophores and between chromophore and auxochrome increased

resulting in the enhanced side-band effect in the electroluminescence spectrum of the device when ITO was processed by different methods.

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Keywords

references

Nakayama T, Hiyama K, Furukawa K, et al. Development of a phosphorescent white OLED with extremely high power efficiency and long lifetime [J]. J. Soc. Inform. Disp., 2008, 16(2):231-236.

Zhou T X, Ngo T, Brown J J, et al. Stable and efficient electrophosphorescent organic light-emitting devices grown by organic vapor phase deposition [J]. Appl. Phys. Lett., 2005, 86(2):021107-1-3.

Meerheim R, Walzer K, Pfeiffer M, et al. Ultrastable and efficient red organic light emitting diodes with doped transport layers [J]. Appl. Phys. Lett., 2006, 89(6):061111-1-3.

Cheng Y. Progress in display technologies and their applications [J]. Chin. Opt.(中国光学), 2010, 3(1):27-32 (in Chinese).

Kido J, Matsumoto T. Bright organic electroluminescent devices having a metal-doped electron-injecting layer [J]. Appl. Phys. Lett., 1998, 73(20):2866-2868.

Parker I D. Carrier tunneling and device characteristics in polymer light-emitting diodes [J]. J. Appl. Phys., 1994, 75(3):1656-1666.

Ichikawa M, Kawaguchi T, Kobayashi K, et al. Bipyridyl oxadiazoles as efficient and durable electron-transporting and hole-blocking molecular materials [J]. J. Mater. Chem., 2006, 16(2):221-225.

Wang Z, Helander M, Qiu J, et al. Unlocking the full potential of organic light-emitting diodes on flexible plastic [J]. Nat. Photon., 2011, 5(12):753-757.

Hartnagel H L, Dawar A, Jain A, et al. Semiconducting Transparent Thin Films [M]. Bristol: Institute of Physics Publishing, 1995.

Zhao Y L, Ma F H, Jiang B, et al. Preparation and properties of ITO/Ag photonic crystal thin films [J]. Opt. Precision Eng.(光学精密工程), 2015, 23(6):1516-1522 (in Chinese).

Seki S, Sawada Y, Nishide T. Indium-tin-oxide thin films prepared by dip-coating of indium diacetate monohydroxide and tin dichloride [J]. Thin Solid Films, 2001, 388(1):22-26.

Ishii M, Mori T, Fujikawa H, et al. Improvement of organic electroluminescent device performance by in situ plasma treatment of indium-tin-oxide surface [J]. J. Lumin., 2000, 87:1165-1167.

Li C, Kwong C, Djurii? A, et al. Improved performance of OLEDs with ITO surface treatments [J]. Thin Solid Films, 2005, 477(1):57-62.

Lu D, Wu Y, Guo J, et al. Surface treatment of indium tin oxide by oxygen-plasma for organic light-emitting diodes [J]. Mater. Sci. Eng.: B, 2003, 97(2):141-4.

Wang H, Du X G, Hao Y Y, et al. Concavo-convex interface for enhancing efficiency in organic light emitting diodes [J]. Chin. J. Liq. Cryst. Disp.(液晶与显示), 2014, 29(4):527-532 (in Chinese).

Guo K, Zhang J, Xu T, et al. High-efficiency near ultraviolet and blue organic light-emitting diodes using star-shaped material as emissive and hosting molecules [J]. J. Disp. Technol., 2014, 10(8):642-646.

Xu T, Lambert Y, Grandidier B, et al. Optical absorption of silicon nanowires [J]. J. Appl. Phys., 2012, 112(3):033506-1-5.

Zhou D, Pennec Y, Djafari-Rouhani B, et al. Optimization of the optical properties of nanostructured silicon surfaces for solar cell applications [J]. J. Appl. Phys., 2014, 115(13):134304-1-6.

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