Preparation of Quantum Dot Light-emitting Diodes Based on The Quantum Dots-CBP Hybrid

HU Lian; WU Hui-zhen

doi:10.3788/fgxb20153610.1106

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Preparation of Quantum Dot Light-emitting Diodes Based on The Quantum Dots-CBP Hybrid

更新时间：2020-08-12

- Preparation of Quantum Dot Light-emitting Diodes Based on The Quantum Dots-CBP Hybrid
- Chinese Journal of Luminescence Vol. 36, Issue 10, Pages: 1106-1112(2015)
- 作者机构：
  
  1. 浙江大学物理系,310027
  2. 江南大学理学院, 江苏省轻工光电工程技术研究中心,江苏无锡,214122
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153610.1106
  CLC： O482.31
- Received：22 July 2015，
  
  Revised：25 August 2015，
  
  Published：10 October 2015
- 稿件说明：
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胡炼, 吴惠桢,. 基于量子点-CBP混合层的量子点LED的制备[J]. 发光学报, 2015,36(10): 1106-1112

HU Lian, WU Hui-zhen,. Preparation of Quantum Dot Light-emitting Diodes Based on The Quantum Dots-CBP Hybrid[J]. Chinese Journal of Luminescence, 2015,36(10): 1106-1112
胡炼, 吴惠桢,. 基于量子点-CBP混合层的量子点LED的制备[J]. 发光学报, 2015,36(10): 1106-1112 DOI： 10.3788/fgxb20153610.1106.

HU Lian, WU Hui-zhen,. Preparation of Quantum Dot Light-emitting Diodes Based on The Quantum Dots-CBP Hybrid[J]. Chinese Journal of Luminescence, 2015,36(10): 1106-1112 DOI： 10.3788/fgxb20153610.1106.

摘要

采用一锅法制备出高质量的具有核壳结构的CdSe@ZnS、CdZnS/ZnS量子点。将量子点混入空穴传输材料CBP中形成复合的有源材料

经过几步简单的旋涂操作

制备出相应的绿光、蓝光量子点LED器件。这种方法利用了油溶性量子点和CBP材料的相容性

减少了旋涂操作的步骤

有利于快速制备基于量子点的电致发光器件。基于两步旋涂操作制备的量子点LED

由于阴极与复合有源层之间的能级差较大

导致需要较高的开启电压。在CBP材料中

注入的载流子有可能会被量子点表面缺陷捕获

形成表面态的发光。表面态发光的相对强度依赖于载流子浓度。

Abstract

High quality CdSe@ZnS and CdZnS/ZnS quantum dots (QDs) with core/shell structures were synthesized by the one pot method. The two types of QDs were mixed with the hole transport material CBP

respectively. The CBP:QDs hybrids were spin coated as the active layers. The green and blue emitting QD light-emitting diodes (LED) can be prepared with simple spin coating operation. This method reduces the steps of spin coating because the hybrid of CBP and QDs is spin coated together

thus the QD-LED can be produced easily. For the QD-LED with two spin coating steps

the energy level of cathode is far from that of CBP:QD layer

which results the high turn-on voltage. Surface states of QDs in CBP may capture the injected carriers to form the surface state emission. The surface state emission related to the carrier density.

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references

Jang E, Jun S, Jang H, et al. White-light-emitting diodes with quantum dot color converters for display backlights [J]. Adv. Mater., 2010, 22(28):3076-3080.

Dai X, Zhang Z X, Jin Y Z, et al. Solution-processed, high-performance light-emitting diodes based on quantum dots [J]. Nature, 2014, 515(7525):96-99.

Yang M, Yu T, Zhang Z P, et al. Turn-on fluorescent probe based on quantum dots for detection of trace amount glutamate dehydrogenase [J]. Chin. J. Anal. Chem.(分析化学), 2014, 42(3):436-440 (in Chinese).

Qian L, Zheng Y, Xue J, et al. Stable and efficient quantum-dot light-emitting diodes based on solution-processed multilayer structures[J]. Nat. Photon., 2011, 5(9):543-548.

Zhang W J, Zhai B C, Xu J. Fabrication and characterization of green CdSe quantumn dot light emitting diodes with ZnO electron-transport layer [J]. Chin. J. Lumin.(发光学报), 2012, 33(11):1171-1176 (in Chinese).

Li Z S, Yue Y Y, Zhang Y X, et al. Electron transfer mechanism of butylamine-capped CdSe quantum dot sensitized nanocrystalline TiO2 films [J]. Chin. Opt.(中国光学), 2015, 8(3):428-438 (in Chinese).

Yuan X Y, Kuang H Y, Feng L, et al. Determination of moroxydine residue in tomatoes using CdTe quantum dots as fluorescence probes [J]. Chin. J. Anal. Chem.(分析化学), 2014, 42(7):1057-1060 (in Chinese).

Wan K B, Jeonghun K, Jaehoon L, et al. Deep blue light-emitting diodes based on Cd1-xZnxS@ZnS quantum dots [J]. Nanotechnology, 2009, 20 (7):075202-1-6.

Yang X, Dev K, Wang J, et al. Light extraction efficiency enhancement of colloidal quantum dot light-emitting diodes using large-scale nanopillar arrays [J]. Adv. Funct. Mater., 2014, 24(38):5977-5984.

Hu L, Wu H Z, Du L X, et al. The effect of annealing and photoactivation on the optical transitions of band-band and surface trap states of colloidal quantum dots in PMMA [J]. Nanotechnology, 2011, 22(12):125202-1-6.

Ye S H, Hu T Q, Yang M, et al. Solution processed high-efficiency low color temperature organic light emitting diodes and related materials [J]. Chin. J. Liq. Cryst. Disp.(液晶与显示), 2015, 30(3):421-426 (in Chinese).

Wang G H, Ji H X, Zhang X D, et al. Effect of outcoupling layers on optical and electrical properties of top-emitting organic white light emitting devices [J]. Chin. J. Liq. Cryst. Disp.(液晶与显示), 2015, 30(3):437-443 (in Chinese).

Hu J T, Zong Y F, Deng Y F, et al. Solution processible SimCP:FIrpic doped blue phosphorescent devices [J]. Chin. J. Liq. Cryst. Disp.(液晶与显示), 2015, 30(2):240-245 (in Chinese).

Kwak J, Bae W K, Lee D, et al. Bright and efficient full-color colloidal quantum dot light-emitting diodes using an inverted device structure [J]. Nano Lett., 2012, 12(5):2362-2366.

Li Y Q, Rizzo A, Cingolani R, et al. Bright white-light-emitting device from ternary nanocrystal composites [J]. Adv. Mater., 2006, 18(19):2545-2548.

Kudera S, Zanella M, Giannini C, et al. Sequential growth of magic-size CdSe nanocrystals [J]. Adv. Mater., 2007, 19(4):548-552.

Tan Z, Zhang F, Zhu T, et al. Bright and color-saturated emission from blue light-emitting diodes based on solution-processed colloidal nanocrystal quantum dots [J]. Nano Lett., 2007, 7(12):3803-3807.

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