Effects and Design of i-GaN and p-GaN Layer Thickness on The Back-illuminated and Front-illuminated GaN p-i-n Ultraviolet Photodetectors

ZHOU Mei; LI Chun-yan; ZHAO De-gang

doi:10.3788/fgxb20153609.1034

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Effects and Design of i-GaN and p-GaN Layer Thickness on The Back-illuminated and Front-illuminated GaN p-i-n Ultraviolet Photodetectors

更新时间：2020-08-12

- Effects and Design of i-GaN and p-GaN Layer Thickness on The Back-illuminated and Front-illuminated GaN p-i-n Ultraviolet Photodetectors
- Chinese Journal of Luminescence Vol. 36, Issue 9, Pages: 1034-1040(2015)
- 作者机构：
  
  1. 中国农业大学理学院应用物理系北京,100083
  2. 中国科学院半导体研究所集成光电子学国家重点实验室北京,100083
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153609.1034
  CLC： TN304.2
- Received：09 June 2015，
  
  Revised：22 July 2015，
  
  Published：03 September 2015
- 稿件说明：
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周梅, 李春燕, 赵德刚. 背照射和正照射p-i-n结构GaN紫外探测器的i-GaN和p-GaN厚度设计[J]. 发光学报, 2015,36(9): 1034-1040

ZHOU Mei, LI Chun-yan, ZHAO De-gang. Effects and Design of i-GaN and p-GaN Layer Thickness on The Back-illuminated and Front-illuminated GaN p-i-n Ultraviolet Photodetectors[J]. Chinese Journal of Luminescence, 2015,36(9): 1034-1040
周梅, 李春燕, 赵德刚. 背照射和正照射p-i-n结构GaN紫外探测器的i-GaN和p-GaN厚度设计[J]. 发光学报, 2015,36(9): 1034-1040 DOI： 10.3788/fgxb20153609.1034.

ZHOU Mei, LI Chun-yan, ZHAO De-gang. Effects and Design of i-GaN and p-GaN Layer Thickness on The Back-illuminated and Front-illuminated GaN p-i-n Ultraviolet Photodetectors[J]. Chinese Journal of Luminescence, 2015,36(9): 1034-1040 DOI： 10.3788/fgxb20153609.1034.

摘要

研究了i-GaN和p-GaN厚度对背照射和正照射p-i-n结构GaN紫外探测器响应光谱的影响。模拟计算发现:对于背照射结构

适当地减小i-GaN厚度有利于提高探测器的响应

降低i-GaN层的本底载流子浓度也有利于提高探测器的响应;p-GaN的欧姆接触特性好坏对探测器的响应影响不大

适当地增加p-GaN厚度可以改善探测器性能。而正照射结构则不同

i-GaN厚度对探测器的响应度影响不大

但欧姆接触特性差将严重降低探测器的响应

适当地减小p-GaN厚度可以大幅度改善探测器的响应特性。能带结构和入射光吸收的差别导致了正照射和背照射探测器结构中i层和p层厚度的选择和设计不同。

Abstract

The effects of i-GaN and p-GaN layer thickness on the spectral response of back-illuminated and front-illuminated GaN p-i-n structure ultraviolet photodetectors were investigated by theory calculation. For the back-illuminated p-i-n photodetectors

the device quantum efficiency can be improved by both suitably decreasing the thickness of i-GaN layer and increasing the thickness of p-GaN layer

and the Ohmic contact property of p-GaN has not obvious influence on the device responsivity. The quantum efficiency of photodetector can be improved by reducing the background carrier concentration of i-GaN layer. The results are different for the front-illuminated p-i-n photodetectors. it is found that the device quantum efficiency can be improved by both properly increasing the thickness of i-GaN layer and decreasing the thickness of p-GaN layer

and the excellent Ohmic contact property of p-GaN is very important for the front-illuminated p-i-n hotodector. The opposite design method of i-GaN and p-GaN layer for the two photodetectors are mainly attributed to the different energy band and photon absorption.

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references

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