WANG Xin, WANG Cui-luan, WU Xia etc. Coupling Research of High Power Single GaAs Based Semiconductor Laser[J]. Chinese Journal of Luminescence, 2015,36(9): 1018-1021
WANG Xin, WANG Cui-luan, WU Xia etc. Coupling Research of High Power Single GaAs Based Semiconductor Laser[J]. Chinese Journal of Luminescence, 2015,36(9): 1018-1021 DOI: 10.3788/fgxb20153609.1018.
Coupling Research of High Power Single GaAs Based Semiconductor Laser
A high brightness and high power fiber coupling laser module with single diode laser (LD) was designed and fabricated. The wavelength of GaAs semiconductor laser is 975 nm and power is 10W. The numerical aperture of the fiber is 0.18 and the core diameter is 105m. When the drive current is 10A
9.37W output power is obtained from the fiber
the coupling efficiency is 94.3%
and the brightness is 1.64MW/(cm
2
str).
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references
Wang L J, NingY Q, Qin L, et al. Develop of high power diode laser [J]. Chin. J. Lumin.(发光学报), 2015, 36(1):1-16 (in Chinese).
Zhou Z P, Bo B X, Gao X, et al. Fiber coupling design of high power semiconductor laser based on ZEMAX [J]. Chin. J. Lumin.(发光学报), 2013, 34(9):1208-1212 (in Chinese).
Bo B X, Gao X, Wang L, et al. 808 nm wavelength high-power fibre coupling LD [J]. Chin. J. Lasers (中国激光), 1999, 26(3):193-196 (in Chinese).
Faircloth B. High-brightness high-power fiber coupled diode laser system for material processing and laser pumping [J]. SPIE, 2003, 4973:34-41.
Chen H N, Zou Y G, Xu L, et al. Fiber coupling technology of high power semiconductor laser [J]. J. Changchun Univ. Sci. Technol.(长春理工大学学报), 2014, 37(1):6-9 (in Chinese).
Zhou Z P. Fiber Coupling Design of Hundred-watt High Brightness Semiconductor Lasers [D]. Changchun: Changchun University Science and Technology, 2014 (in Chinese).
Gao X, Bo B X, Zhang J, et al. High brightness operation of fiber coupling multiplex diode lasers [J]. Chin. J. Lasers (中国激光), 2007, 34(11):1472-1475 (in Chinese).
Zhu H B, Hao M M, Peng H Y, et al. Module of fiber coupled diode laser based on 808 nm single emitters combination [J]. Chin. J. Lasers (中国激光), 2012, 39(5):0502001-1-5 (in Chinese).
Thermal Analysis and Fiber Coupling Simulation Design of Multi-single Emitters Stacked Semiconductor Laser
Design of Fiber-coupled Laser Diode Module Based on Three-wavelengths Multiplexing by ZEMAX
High Power 1 150 nm Vertical External-cavity Surface Emitting Semiconductor Laser
High Brightness Narrow-linewidth Semiconductor Laser Based on Beam Waist Splitting Polarization Combining
High Power 970 nm Semiconductor Laser With A Tunable Grating External Cavity
Related Author
Jiao-jiao WANG
Lin-lin SHI
Xiao-hui MA
He ZHANG
Yan LI
Wei-yan LI
Li XU
LIU Cui-cui
Related Institution
State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
University of Chinese Academy of Sciences
Changchun ACE Photonics Co., Ltd.
School of Electrical and Automation Engineering, Liaoning Institute of Science and Technology
Key Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences