ZHOU Jin-rong,. Intelligent Dimmer Mathematical Model of White Light LED[J]. Chinese Journal of Luminescence, 2015,36(8): 953-956 DOI: 10.3788/fgxb20153608.0953.
Intelligent Dimmer Mathematical Model of White Light LED
but also by the junction temperature change. The traditional LED dimming method typically only changes the current and ignores the junction temperature changes. In order to fix this downside
a mathematical model was established based on the relationship among the luminous flux
current and pin temperature that can show the junction temperature of LED. The luminous fluxes of HL001WY type GaN-based white LEDs were tested at different currents and pin temperatures
and the experimental data were quadratic term trend regression. By using calibration and normalization method
the mathematical model was established. The calculations show that the relative error between the calculated value and the actual measured value is less than 4.5%.
关键词
Keywords
references
Wang L, Wang X D, Huang G Y, et al. Research and design of the tunnel lighting dimming system based on LED light source [J]. Proc. Autom. Instrum.(自动化仪表), 2012, 33(12):54-57 (in Chinese).
Fan H P, Li J L, Liu Z D. Plant intelligent LED dimmer system design based on WSN [J]. J. Agric. Mechan. Res.(农机化研究), 2013(12):178-181 (in Chinese).
Zhao Q M, Zhou X L, Zhou M Q, et al. Research on the effect of LED lighting system for supplementary lighting on the arabidopsis seed germination [J]. China Illumin. Eng. J.(照明工程学报), 2012, 23(3):64-68 (in Chinese).
Loo K H, Lai Y M, Tan S C, et al. On the color stability of phosphor-converted white LEDs at DC, PWM, and bilevel drive [J]. IEEE Trans. Power Electron., 2012, 27(20):974-984.
Zhang J J, Zhang T, Zheng Q, et al. Radiant efficiency and thermal analysis of high-power LEDs at linear and PWM dimming modes [J]. J. Optoelectron.Laser (光电子激光), 2013, 24(1):50-55 (in Chinese).
Cui D S, Guo W L, Cui B F, et al. Effects of injection current on optical characteristics of GaN-based power LED [J]. J. Optoelectron.Laser (光电子激光), 2011, 22(9):1309-1312 (in Chinese).
Zhong W J, Wei A X, Zhao Y. Dependence of GaN-based white LED colorimetric parameters on junction temperature [J]. Chin. J. Lumin.(发光学报), 2013, 34(9):1203-1207 (in Chinese).
Wang J C, Fang C H, Wu Y F, et al. The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes [J]. J. Lumin., 2012, 132(2):429-433.
Xu Y Q, Li B Q, Zhao W, et al. Influence of thermal effect on white LED photoelectric properties [J]. Mater. Res. Appl.(材料研究与应用), 2014, 8(4):245-250 (in Chinese).
Hu C Q, Zhang F H, Zhang J. The spectral and junction temperature properties of new white light LED [J]. Chin. J. Lumin.(发光学报), 2012, 33(9):939-943 (in Chinese).
Chen T, Chen Z Z, Lin L, et al. Methods for determining junction temperature of GaN-based white LEDs [J]. Chin. J. Lumin.(发光学报), 2006, 27(3):407-412 (in Chinese).
Liu L M, Zheng X D. Measurements of LEDs spectral characteristics and junction temperature [J]. Chin. J. Lumin.(发光学报), 2009, 30(5):1069-1073 (in Chinese).