Role of Spinning Speed in Fabrication of Spin-coated P3HT-based OFETs

JIANG Jing; ZHENG Ling-cheng; WANG Qian; WU Feng; CHENG Xiao-man

doi:10.3788/fgxb20153608.0941

您当前的位置：

首页 >

文章列表页 >

Role of Spinning Speed in Fabrication of Spin-coated P3HT-based OFETs

更新时间：2020-08-12

- Role of Spinning Speed in Fabrication of Spin-coated P3HT-based OFETs
- Chinese Journal of Luminescence Vol. 36, Issue 8, Pages: 941-946(2015)
- 作者机构：
  
  1. 天津理工大学理学院, 天津 300384
  2. 天津理工大学材料科学与工程学院, 显示材料与光电器件重点实验室(教育部), 天津光电材料与器件重点实验室天津,300384
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153608.0941
  CLC： O47
- Received：19 May 2015，
  
  Revised：16 June 2015，
  
  Published：03 August 2015
- 稿件说明：
移动端阅览
蒋晶, 郑灵程, 王倩等. 旋涂速度对制备P3HT有机场效应晶体管性能的影响[J]. 发光学报, 2015,36(8): 941-946

JIANG Jing, ZHENG Ling-cheng, WANG Qian etc. Role of Spinning Speed in Fabrication of Spin-coated P3HT-based OFETs[J]. Chinese Journal of Luminescence, 2015,36(8): 941-946
蒋晶, 郑灵程, 王倩等. 旋涂速度对制备P3HT有机场效应晶体管性能的影响[J]. 发光学报, 2015,36(8): 941-946 DOI： 10.3788/fgxb20153608.0941.

JIANG Jing, ZHENG Ling-cheng, WANG Qian etc. Role of Spinning Speed in Fabrication of Spin-coated P3HT-based OFETs[J]. Chinese Journal of Luminescence, 2015,36(8): 941-946 DOI： 10.3788/fgxb20153608.0941.

摘要

采用溶液化的方法制备了以PMMA为绝缘层、P3HT为有源层的有机场效应晶体管.研究了P3HT有源层和PMMA绝缘层的旋涂速度对器件性能的影响.实验结果表明

当P3HT和PMMA的旋涂速度均为2 000 r/min时

器件的性能最佳.峰值场效应迁移率为6.8410

-2

－1

.结果表明

选择适当的旋涂速度是一种有效提高溶液化制备有机场效应晶体管性能的方法.

Abstract

P3HT-based organic field effect transistors(OFETs) with PMMA gate dielectric were fabricated by solution process. The effects of the spinning speeds of both P3HT active layer and PMMA gate dielectric on the performance of the devices were investigated. The experiment results show that the fabricated OFETs exhibit the optimal performance at the spinning speeds of 2 000 r/min of both P3HT and PMMA

of which the field effect mobility is 6.8410

-2

－1

. This indicates that spinning speed is a technological parameter to improve the performance of solution-processed OFETs.

关键词

Keywords

references

Mei J, Diao Y, Appleton A L, et al. Integrated materials design of organic semiconductors for field-effect transistors [J]. J. Am. Chem. Soc., 2013, 135(18):6724-6746.

Zhao G, Cheng X M, Tian H J, et al. Improved performance of pentacene organic field-effect transistors by inserting a V2O5 metal oxide layer [J]. Chin. Phys. Lett., 2011, 28(12):127203-1-3.

Di C, Lu K, Zhang L, et al. Solvent-assisted re-annealing of polymer films for solution-processable organic field-effect transistors [J]. Adv. Mater., 2010, 22(11):1273-1277.

Bai X, Cheng X M, Fan J F, et al. Effect of PVA gate dielectric concentration on poly(3-hexylthiophene) based organic field effect transistors [J]. Chin. J. Lumin.[HTK](发光学报), 2014, 35(4):471-475 (in Chinese).

Cheng X, Caironi M, Noh Y Y, et al. Air stable cross-linked CYTOP ultrathin gate dielectric for high yield low-voltage top-gate organic field-effect transistors [J]. Chem. Mater., 2010, 22(4):1559-1566.

Uemura T, Hirose Y, Uno M, et al. Very high mobility in solution-processed organic thin-film transistors of highly ordered

benzothieno [3,2-b] benzothiophene derivatives [J]. Appl. Phys. Express, 2009, 2(11):111501-1-5.

Wedl B, Resel R, Leising G, et al. Crystallisation kinetics in thin films of dihexyl-terthiophene: The appearance of polymorphic phases [J]. RSC Advance, 2012, 2(10):4404-4414.

Kotsuki K, Tanaka H, Obata S, et al. The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility [J]. Appl. Phys. Lett., 2014, 104(23):233306-1-3.

Necliudov P V, Shur M S, Gundlach D J, et al. Modeling of organic thin film transistors of different designs [J]. J. Appl. Phys., 2000, 88(11):6594-6597.

Horowitz G. Field-effect transistors based on short organic molecules [J]. J. Mater. Chem., 1999, 9(9):2021-2026.

Seshadri K, Frisbie C D. Potentiometry of an operating organic semiconductor field-effect transistor [J]. Appl. Phys. Lett., 2001, 78(7):993-995.

Meng H F, Liu C C, Jiang C J, et al. Effect of gate metal on polymer transistor with glass substrate [J]. Appl. Phys. Lett., 2006, 89(24):243503-1-3.

Views

118

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Polymer Bistable Devices Based on Poly(3-hexylthiophene)/Poly(methylmethacrylate) Bilayer Films

Effect of Poly(vinyl alcohol) Gate Dielectric Concentration on Poly(3-hexylthiophene) Based Organic Field Effect Transistor

Performance and Dielectric Property of Single/Double Acceptor Based Planar Heterojuntion Organic Photovoltaic Cells with P3HT Donor

High Performance C₆₀ Organic Field-effect Transistors with Albumen as The Gate Dielectric

Luminescent Properties of Sm(DBM)₃ Doped PMMA with Secondary Ligands

Related Author

TENG Feng

HU Yu-feng

CAO Ya-peng

PENG Bo

WU Feng

ZHENG Ling-cheng

JIANG Jing

FAN Jian-feng

Related Institution

Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China

School of Science, Tianjin University of Technology

Institute of Material Physics, Tianjin University of Technology, Key Laboratory of Display Material and Photoelectric Devices, Ministry of Education, Tianjin Key Laboratory of Photoelectric Materials and Device

School of Material Science and Engineering, Shanghai University

Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰