Amorphous Indium-zinc-oxide Thin-film Transistors with Copper Source/Drain Electrodes

XU Rui-xia; CHEN Zi-kai; ZHAO Ming-jie; NING Hong-long; ZOU Jian-hua; TAO Hong; WANG Lei; X

doi:10.3788/fgxb20153608.0935

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Amorphous Indium-zinc-oxide Thin-film Transistors with Copper Source/Drain Electrodes

更新时间：2020-08-12

- Amorphous Indium-zinc-oxide Thin-film Transistors with Copper Source/Drain Electrodes
- Chinese Journal of Luminescence Vol. 36, Issue 8, Pages: 935-940(2015)
- 作者机构：
  
  1. 华南理工大学电子与信息学院,广东广州,510640
  2. 广州新视界光电科技有限公司,广东广州,510730
  3. 华南理工大学发光材料与器件国家重点实验室, 广东广州 510641
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153608.0935
  CLC： TN321+.5
- Received：02 April 2015，
  
  Revised：04 June 2015，
  
  Published：03 August 2015
- 稿件说明：
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徐瑞霞, 陈子楷, 赵铭杰等. 使用铜源漏电极的非晶氧化铟锌薄膜晶体管的研究[J]. 发光学报, 2015,36(8): 935-940

XU Rui-xia, CHEN Zi-kai, ZHAO Ming-jie etc. Amorphous Indium-zinc-oxide Thin-film Transistors with Copper Source/Drain Electrodes[J]. Chinese Journal of Luminescence, 2015,36(8): 935-940
徐瑞霞, 陈子楷, 赵铭杰等. 使用铜源漏电极的非晶氧化铟锌薄膜晶体管的研究[J]. 发光学报, 2015,36(8): 935-940 DOI： 10.3788/fgxb20153608.0935.

XU Rui-xia, CHEN Zi-kai, ZHAO Ming-jie etc. Amorphous Indium-zinc-oxide Thin-film Transistors with Copper Source/Drain Electrodes[J]. Chinese Journal of Luminescence, 2015,36(8): 935-940 DOI： 10.3788/fgxb20153608.0935.

摘要

为了实现氧化物薄膜晶体管(TFT)的低电阻布线

采用Cu作为氧化物TFT的源漏电极.通过优化成膜工艺制备了电阻率低至2.0 cm的Cu膜

分析了Cu膜的晶体结构、粘附性及其与a-IZO薄膜的界面

制备了以a-IZO为有源层和Cu膜的粘附层的TFT器件.结果表明:所制备的Cu膜呈多晶结构;引入a-IZO粘附层增强了Cu膜与衬底的粘附性;同时

Cu在a-IZO中的扩散得到了抑制.所制备的TFT的迁移率、亚阈值摆幅和阈值电压分别为12.9 cm

/(Vs)、0.28 V/dec和-0.6 V.

Abstract

Cu was used as the source/drain (S/D) electrodes of amorphous indium-zinc-oxide (a-IZO) thin-film transistors (TFTs) in order to realize low-resistance metallization in oxide thin film transistors. Cu film with a resistivity as low as 2.0 cm was deposited by optimizing the sputtering process. The crystal structure

adhesive property of Cu film as well as the interfaces of Cu/a-IZO were investigated. In addition

a-IZO TFTs with Cu S/D electrodes were fabricated. The Cu films were polycrystalline. The adhesion of Cu to glass substrate was enhanced by introducing an a-IZO film. Meanwhile

the diffusion of Cu atoms was suppressed in a-IZO. The fabricated TFT exhibited a saturated mobility of 12.9 cm

/(Vs)

a subthreshold voltage of 0.28 V/dec and a threshold voltage of -0.6 V.

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references

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