MBE Growth of GaNAs-based Superlattice Solar Cells and Device Properties

ZHENG Xin-he; XIA Yu; LIU San-jie; WANG Jin; HOU Cai-xia; WANG Nai-ming; LU Jian-ya; LI Bao

doi:10.3788/fgxb20153608.0923

您当前的位置：

首页 >

文章列表页 >

MBE Growth of GaNAs-based Superlattice Solar Cells and Device Properties

更新时间：2020-08-12

- MBE Growth of GaNAs-based Superlattice Solar Cells and Device Properties
- Chinese Journal of Luminescence Vol. 36, Issue 8, Pages: 923-929(2015)
- 作者机构：
  
  1. 北京科技大学数理学院物理系北京,100083
  2. 中国科学院纳米器件与应用重点实验室中国科学院苏州纳米技术与纳米仿生研究所, 江苏苏州 215123
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153608.0923
  CLC： TM914.4
- Received：24 April 2015，
  
  Revised：09 July 2015，
  
  Published：03 August 2015
- 稿件说明：
移动端阅览
郑新和, 夏宇, 刘三姐等. GaNAs基超晶格太阳电池的分子束外延生长与器件特性[J]. 发光学报, 2015,36(8): 923-929

ZHENG Xin-he, XIA Yu, LIU San-jie etc. MBE Growth of GaNAs-based Superlattice Solar Cells and Device Properties[J]. Chinese Journal of Luminescence, 2015,36(8): 923-929
郑新和, 夏宇, 刘三姐等. GaNAs基超晶格太阳电池的分子束外延生长与器件特性[J]. 发光学报, 2015,36(8): 923-929 DOI： 10.3788/fgxb20153608.0923.

ZHENG Xin-he, XIA Yu, LIU San-jie etc. MBE Growth of GaNAs-based Superlattice Solar Cells and Device Properties[J]. Chinese Journal of Luminescence, 2015,36(8): 923-929 DOI： 10.3788/fgxb20153608.0923.

摘要

采用分子束外延(MBE)生长技术生长了周期厚度不同的1 eV吸收带边的GaN

0.03

0.97

/In

0.09

0.91

As应变补偿短周期超晶格(SPSL).高分辨率X射线衍射(HRXRD)测量结果显示

当周期厚度从6 nm增加到20 nm时

超晶格的结晶质量明显改善.然而

当周期厚度继续增加时

超晶格品质劣化.对超晶格周期良好的样品通过退火优化

获得了具有低温光致发光现象的高含N量GaNAs/InGaAs超晶格

吸收带边位于1 eV附近.使用10个周期的GaNAs/InGaAs超晶格(10 nm/10 nm)和GaAs组成的p-i-n太阳电池的短路电流达到10.23 mA/cm

.经聚光测试获得的饱和电流密度、二极管理想因子与由电池暗态电流-电压曲线得到的结果一致.

Abstract

Period thickness-dependent GaNAs/InGaAs short-period superlattice and solar cells with an absorption edge of around 1 eV were grown by MBE. High-resolution X-ray diffraction (HRXRD) measurements indicate that the crystalline quality of SPSL is improved while the period thickness increases from 6 nm to 20 nm. However

when the period further rises

the period repeatability and interface quality of SPSL degrade. By using a proper thickness and optimization of thermal annealing

good optical properties of SPSL with higher N content in the superlattice are achieved. The samples show an absorption edge of around 1 eV. The p-i-n solar cell using the optimized SPSL as the active region was fabricated. The short-circuit current density of the device reaches 10.23 mA/cm

. The ideality factor extrapolated by concentrator test of the p-i-n soalr cells is in good agreement with that of

J-V

curves under darkness.

关键词

Keywords

references

Law D C, King R R, Yoon H, et al. Future technology pathways of terrestrial Ⅲ-Ⅴ multijunction solar cells for concentrator photovoltaic systems [J]. Sol. Energy Mater. Sol. Cells, 2010, 94(8):1314-1318.

King R R, Law D C, Edmondson K M, et al. 40% Efficient metamorphic GaInP/GaInAs/Ge multijunction solar cells [J]. Appl. Phys. Lett., 2007, 90(18):183516-1-3.

Kurtz S R, Myers D, Olson J M. Projected performance of three- and four-junction devices using GaAs and GaInP //26th IEEE Photovoltaic Specialists Conference (PVSC), Anaheim: IEEE, 2011:526-529 .

Mair R A, Lin J Y, Jiang H X, et al. Time-resolved photoluminescence studies of InxGa1-xAs1-y Ny [J]. Appl. Phys. Lett., 2000, 76(1):188-190.

Yuen H. High efficiency solar cells at solar junction //Proceeding of Renewable Energy and The Environment, Texas: Optical Society of America, 2011:SRWD3.

Oshima R, Huang J, Miyashita N, et al. Transmission electron microscopy study of GaInNAs(Sb) thin films grown by atomic hydrogen-assisted molecular beam epitaxy [J]. Appl. Phys. Lett., 2011, 99(19):191907-1-3.

Kong X, Trampert A, Tournie E, et al. Decomposition in as-grown (Ga,In)(N,As) quantum wells [J]. Appl. Phys. Lett., 2005, 87(17):171901-1-3.

Jalili Y S, Stavrinou P N, Parry G. GaAs-based Ⅲ-Ny-V1-y active regions based on short-period super-lattice structures [J]. Semicond. Sci. Technol., 2008, 23(12):125016-1-6.

Miyamoto T, Sato S, Pan Z, et al. GaNAs/GaInAs short-period superlattice quantum well structures grown by MOCVD using TBAs and DMHy [J]. Cryst. Growth, 1998, 195:421.

Tu C W. Ⅲ-N-V low-bandgap nitrides and their device applications [J]. J. Phys., 2001, 13(32):7169-7182.

Okada Y, Kobayashi N, Sasaki N. Improvement of below-bandgap photoabsorption in GaAs solar cells using GaAs/GaNAs/InGaAs quantum wells //4th IEEE Photovoltaic Specialists Conference (PVSC), Waikoloa: IEEE, 2006:865-868.

Wu P H, Su Y K, Yen C T, et al. A novel GaAsN/InGaAs strain-compensated multi-quantum wells solar cell [J]. Semicond. Sci. Technol., 2007, 22(5):549-552.

Gao K, Prucnal S, Skorupa W, et al. Formation and photoluminescence of GaAs1-xNx dilute nitride achieved by N-implantation and flash lamp annealing [J]. Appl. Phys. Lett., 2014, 105(1):012107-1-4.

Nuytten T, Hayne M, Bansal B, et al. Charge separation and temperature-induced carrier migration in Ga1-xInxNyAs1-y multiple quantum wells [J]. Phys. Rev. B, 2011, 84(4):1-8.

Liu H F, Chua S J, Xiang N. Growth-temperature- and thermal-anneal-induced crystalline reorientation of aluminum on GaAs(100) grown by molecular beam epitaxy [J]. J. Appl. Phys., 2007, 102(1):013504-1-4.

Reason M, Rudawski N G, Mckay H A, et al. Mechanisms of GaAsN growth: Surface and step-edge diffusion [J]. J. Appl. Phys., 2007, 101(8):083520-1-5.

Rapcewicz K, Chen B, Yakobson B, et al. Consistent methodology for calculating surface and interface energies [J]. Phys. Rev. B, 1998, 57(12):7281-7291.

Zhang H, Ren F, Hong M, et al. Structure and growth mechanism of V/Ag multilayers with different periodic thickness fabricated by magnetron sputtering deposition [J]. J. Mater. Sci. Technol., 2014, 30(10):1012-1019.

Yudo T, Tsuchiya H, Ando H, et al. Damage due to nitrogen molecular ions of GaN heteroepitaxial layers grown on Si(001) substrates by molecular beam epitaxy assisted by electron cyclotron resonance [J]. Jpn. J. Appl. Phys., 2000, 39:2523-2528.

Lin M E, Sverdlov B, Zhou C L, et al. Refractive indices of wurtzite and zincblende GaN [J]. Appl. Phys. Lett., 1993, 62(20):3479-3481.

Varshni Y P. Temperature dependence of the energy gap in semiconductors [J]. Physica, 1967, 34:149-154.

Sellers I R, Tan W S, Smith K, et al. Wide depletion width of 1 eV GaInNAs solar cells by thermal annealing [J]. Appl. Phys. Lett., 2011, 99(15):151111-1-3.

Miyashita N, Ahsan N, Islam M, et al. Study on the device structure of GaInNAs(Sb) based solar cells for use in 4-junction tandem solar cells //38th IEEE Photovoltaic Specialists Conference (PVSC), Austin: IEEE, 2012:954-956.

Miyashita N, Ahsan N, Islam M, et al. Evaluation of GaInNAs(Sb) solar cells for use in next generation Ⅲ-Ⅴ tandem solar cells //37th IEEE Photovoltaic Specialists Conference (PVSC), Seattle: IEEE, 2011:526-529.

Ng T K, Yoon S F, Tan K H, et al. 1 eV GaNxAs1-x-ySby material for lattice-matched Ⅲ-Ⅴ solar cell implementation on GaAs and Ge //34th IEEE Photovoltaic Specialists Conference (PVSC), Philadelphia: IEEE, 2009:76-80.

Views

221

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Theoretical Study on Effect of Interfacial Properties on Optical Properties of InAs/GaSb Type Ⅱ Superlattices

Advances in Epitaxial Growth, Structural and Optical Properties of Antimonide-based Type-Ⅱ Superlattices

Influence of Substrate Temperature on Cu₂ZnSnSe₄ Thin Film Solar Cells Fabricated by Co-evaporation Process

Fabrication of Cu₂SnS₃ Thin Films Solar Cells by Magnetron Sputtering Sn and CuS Targets

Phase Segregation of ZnO/ZnMgO Superlattice Affected by Ⅱ-Ⅵ Ratio

Related Author

MA Zejun

LI Yuan

ZHU Shenbo

CHENG Fengmin

LIU Junqi

WANG Lijun

ZHAI Shenqiang

ZHUO Ning

Related Institution

College of Materials Science and Opto-Electronic Technology， University of Chinese Academy of Sciences

Laboratory of Solid-State Optoelectronics Information Technology， Institute of Semiconductors， Chinese Academy of Sciences

School of Materials Science and Engineering, Harbin Institute of Technology

State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals

School of Science and Engineering, The Chinese University of Hong Kong(Shenzhen)

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰