Effect of YF3 Electron Injection Layer on The Performance of Organic Light-emitting Devices

ZHANG Lei; ZHENG Xuan-ming; LIN Jie; LIU Xing-yuan

doi:10.3788/fgxb20153608.0912

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Effect of YF₃ Electron Injection Layer on The Performance of Organic Light-emitting Devices

更新时间：2020-08-12

- Effect of YF₃ Electron Injection Layer on The Performance of Organic Light-emitting Devices
- Chinese Journal of Luminescence Vol. 36, Issue 8, Pages: 912-916(2015)
- 作者机构：
  
  1. 中国科学院大学, 北京 100049
  2. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所, 吉林长春 130033
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153608.0912
  CLC： TN383+.1
- Received：12 March 2015，
  
  Revised：07 April 2015，
  
  Published Online：05 June 2015，
  
  Published：03 August 2015
- 稿件说明：
移动端阅览
张镭, 郑宣明, 林杰等. 氟化钇电子注入层对OLED器件性能的影响[J]. 发光学报, 2015,36(8): 912-916

ZHANG Lei, ZHENG Xuan-ming, LIN Jie etc. Effect of YF3 Electron Injection Layer on The Performance of Organic Light-emitting Devices[J]. Chinese Journal of Luminescence, 2015,36(8): 912-916
张镭, 郑宣明, 林杰等. 氟化钇电子注入层对OLED器件性能的影响[J]. 发光学报, 2015,36(8): 912-916 DOI： 10.3788/fgxb20153608.0912.

ZHANG Lei, ZHENG Xuan-ming, LIN Jie etc. Effect of YF3 Electron Injection Layer on The Performance of Organic Light-emitting Devices[J]. Chinese Journal of Luminescence, 2015,36(8): 912-916 DOI： 10.3788/fgxb20153608.0912.

摘要

利用氟化钇(YF

)代替LiF作为电子注入层材料

以金属铝作为阴极

制备了有机电致发光器件(OLED).实验结果表明:适当厚度的YF

电子注入缓冲层可以增强阴极的电子注入能力

使得电子和空穴的浓度更加平衡

有效地提高器件的电致发光性能.其中

1.2 nm厚YF

的器件具有最小的起亮电压2.6 V

最高的电流效率8.52 cdA

-1

最大的亮度36 530 cdm

-2

.最大亮度和电流效率与LiF参考样品相比

分别提高了39%和53%.

Abstract

Organic light emitting devices (OLEDs) were fabricated with yttrium fluoride (YF

) as the electron injection layer instead of lithium fluoride (LiF) and aluminum as the cathode. The experiment results show that YF

injection buffer layer with appropriate thickness can effectively enhance the electron injection ability of the cathode

leading to more balanced concentration of electrons and holes

and optimized electroluminescent properties of OLEDs. The device with 1.2 nm-thick YF

layer has the minimum turn-on voltage of 2.6 V

the maximum current efficiency of 8.52 cdA

-1

and the maximum luminance of 36 530 cdm

-2

. Compared with LiF reference sample

the maximum brightness and current efficiency are increased by 39% and 53%

respectively.

关键词

Keywords

references

Tang C W, Vanslyke S A. Organic electroluminescnet diodes [J]. Appl. Phys. Lett., 1987, 51(12):913-915.

Burroughes J H, Bradley D D C, Brown A R, et al. Light-emitting-diodes based on conjugated polymers [J]. Nature, 1990, 347(6293):539-541.

Wu X X, Li F S, Wu W, et al. Flexible organic light emitting diodes based on double-layered graphene/PEDOT :PSS conductive film [J]. Chin. J. Lumin.(发光学报), 2014, 35(4):486-490 (in Chinese).

Hu S K, Jin Y, Wu Z J, et al. Top-emitting organic light-emitting device integrated pixel driven by low voltage organic thin film transistor [J]. Chin. J. Lumin.(发光学报), 2014, 35(11):1370-1375 (in Chinese).

Marchetti A P, Haskins T L, Young R H, et al. Permanent polarization and charge distribution in organic light-emitting diodes(OLEDs): Insights from near-infrared charge-modulation spectroscopy of an operating OLED [J]. J. Appl. Phys., 2014, 115(11):114506-1-6.

Inada Y, Nishiwaki S, Hirasawa M, et al. Improved light extraction from white organic light-emitting devices using a binary random phase array [J]. Appl. Phys. Lett., 2014, 104(6):063301-1-3.

Zhang Y J, Aziz J. Very high efficiency phosphorescent organic light-emitting devices by using rough indium tin oxide [J]. Appl. Phys. Lett., 2014, 105(1):013305-1-3.

An T, Li P, Li H K, et al. Hybrid white organic light-emitting devices based on quantum well structure [J]. Chin. J. Lumin.(发光学报), 2014, 35(11):1342-1348 (in Chinese).

Seo J A, Gong M, Lee J Y. High external quantum efficiency in yellow and white phosphorescent organic light-emitting diodes using an indoloacridinefluorene type host material [J]. Org. Electron., 2014, 15(8):1843-1848.

Zhang Z Q, Wang Q, Dai Y F, et al. High efficiency fluorescent white organic light-emitting diodes with red, green and blue separately monochromatic emission layers [J]. Org. Electron., 2009, 10(3):491-495.

Kido J, Matsumoto T. Bright organic electroluminescent devices having a metal-doped electron-injecting layer [J]. Appl. Phys. Lett., 1998, 73(20):2866-2868.

Burrows P E, Shen Z, Bulovic V, et al. Relationship between electroluminescence and current transport in organic heterojunction light-emitting devices [J]. J. Appl. Phys., 1996, 79(10):7991-8006.

Tsai Y S, Juang F S, Yang T H, et al. Effects of different buffer layers in flexible organic light-emitting diodes [J]. J. Phys. Chem. Solids, 2008, 69(2):764-768.

Makinen A J, Hill I G, Shashidhar R, et al. Hole injection barriers at polymer anode/small molecule interfaces [J]. Appl. Phys. Lett., 2001, 79(5):557-559.

Liu T H. Lithium manganese oxide as an effective buffer layer between organic and metal layers in organic light-emitting devices [J]. Appl. Phys. Lett., 2006, 89(10):102101-1-3.

Hu Y M, He Y, Chen X Q, et al. Obvious efficiency enhancement of organic light-emitting diodes by parylene-N buffer layer [J]. Appl. Phys. Lett., 2012, 100(16):163303-1-3.

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State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

Graduate University of Chinese Academy of Sciences, Beijing 100039, China

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