Preparation and Ultraviolet Detection Performance of Ga2O3 Thin Films

LIU Hao; DENG Hong; WEI Min; YU Yong-bin; CHEN Wen-yu

doi:10.3788/fgxb20153608.0906

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Preparation and Ultraviolet Detection Performance of Ga₂O₃ Thin Films

更新时间：2020-08-12

- Preparation and Ultraviolet Detection Performance of Ga₂O₃ Thin Films
- Chinese Journal of Luminescence Vol. 36, Issue 8, Pages: 906-911(2015)
- 作者机构：
  
  1. 电子科技大学电子薄膜与集成器件国家重点实验室, 四川成都 610054
  2. 电子科技大学信息与软件工程学院,四川成都,610054
  3. 电子科技大学计算机科学与工程学院,四川成都,610054
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153608.0906
  CLC： O484.4
- Received：28 May 2015，
  
  Revised：29 July 2015，
  
  Published：03 August 2015
- 稿件说明：
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刘浩, 邓宏, 韦敏等. 氧化镓薄膜的制备及其日盲紫外探测性能研究[J]. 发光学报, 2015,36(8): 906-911

LIU Hao, DENG Hong, WEI Min etc. Preparation and Ultraviolet Detection Performance of Ga2O3 Thin Films[J]. Chinese Journal of Luminescence, 2015,36(8): 906-911
刘浩, 邓宏, 韦敏等. 氧化镓薄膜的制备及其日盲紫外探测性能研究[J]. 发光学报, 2015,36(8): 906-911 DOI： 10.3788/fgxb20153608.0906.

LIU Hao, DENG Hong, WEI Min etc. Preparation and Ultraviolet Detection Performance of Ga2O3 Thin Films[J]. Chinese Journal of Luminescence, 2015,36(8): 906-911 DOI： 10.3788/fgxb20153608.0906.

摘要

采用射频磁控溅射方法在蓝宝石单晶衬底上沉积氧化镓(Ga

)薄膜

并通过光刻剥离工艺(Lift-off)制备了金属-半导体-金属结构的Ga

日盲紫外探测器.对不同温度下沉积的Ga

薄膜分析表明

在800 ℃下获得的薄膜结晶质量最好

薄膜的导电性则随着沉积温度的上升先增大后减小.在800 ℃制备的-Ga

薄膜的可见光透光率大于90%

光学吸收边在255 nm附近.在10 V偏压下

探测器的暗电流约为1 nA

光电流达800 nA

对紫外光响应迅速.器件的响应度达到0.3 A/W

260 nm波长处的响应度是290 nm波长对应响应度的40倍

可实现日盲紫外波段的探测.

Abstract

Gallium oxide(Ga

) thin films were depsited by radio frequency magnetron sputtering on sapphire(0001) substrates with a range of substrate temperatures from 500 to 1 000 ℃. The norphological characteristics

optical bandgaps

electrical properties and photoresponsivity of the grown thin films were researched.With the increasing of the growth temperature

the crystallinity and conductivity of the films increase at first and then decrease slightly. Ultraviolet-visible spectra indicate that the transmittance of -Ga

film depsited on 800 ℃ is over than 90%

and it's absorption edge is located at about 255 nm

meaning that the optical bandgap was about 4.8 eV. The metal-semiconductor-metal photodetector based on -Ga

film shows dark current of ~1 nA and photocurrent of ~800 nA under 254 nm light illumination at 10 bias voltage. The maximum responsivity of the photodetector is 0.3 A/W at 260 nm

40 times as much as the responsivity at 290 nm.

关键词

Keywords

references

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