HE Rui-ying, WEI Chang-ping, WANG Guo-dong etc. Preparation and Photoelectric Properties of Ni/SnO<sub>2</sub> Composite Thin Films[J]. Chinese Journal of Luminescence, 2015,36(8): 888-892
HE Rui-ying, WEI Chang-ping, WANG Guo-dong etc. Preparation and Photoelectric Properties of Ni/SnO<sub>2</sub> Composite Thin Films[J]. Chinese Journal of Luminescence, 2015,36(8): 888-892 DOI: 10.3788/fgxb20153608.0888.
Preparation and Photoelectric Properties of Ni/SnO2 Composite Thin Films
gel on the glass substrates. The effects of the doping amount of nickel and calcination temperature on the structure and morphology of Ni/SnO
2
films were discussed. The structure and morphology of Ni/SnO
2
composite film were characterized by using XRD
IR
SEM and other testing methods. The results show that the particles of the film calcined at 500 ℃ have high crystallization
small size
and distribute uniformly. The right amount of Ni
2+
doping can improve the absorbance in the near ultraviolet region of SnO
2
film
and the absorbance in the near ultraviolet region of Ni/SnO
2
film decreases with the increasing of Ni
2+
mole fraction from 5% to 10%. The conductivity of Ni/SnO
2
film is the best when Ni
2+
mole fraction is 6%.
关键词
Keywords
references
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