Energy Level Bending and Molecular Packing Mode of 2,7-diocty[1]benzothieno[3,2-b] benzothiophene(C8-BTBT) on MoS2

LYU Lu; NIU Dong-mei; XIE Hai-peng; CAO Ning-tong; Gao Yong-li

doi:10.3788/fgxb20153608.0875

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Energy Level Bending and Molecular Packing Mode of 2,7-diocty[1]benzothieno[3,2-b] benzothiophene(C8-BTBT) on MoS₂

更新时间：2020-08-12

- Energy Level Bending and Molecular Packing Mode of 2,7-diocty[1]benzothieno[3,2-b] benzothiophene(C8-BTBT) on MoS₂
- Chinese Journal of Luminescence Vol. 36, Issue 8, Pages: 875-881(2015)
- 作者机构：
  
  1. 中南大学先进材料超微结构与超快过程研究所,湖南长沙,410083
  2. Department of Physics and Astronomy, University of Rochester,, 27 Rochester,USA,NY146
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153608.0875
  CLC： O46
- Received：29 April 2015，
  
  Revised：09 June 2015，
  
  Published：03 August 2015
- 稿件说明：
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吕路, 牛冬梅, 谢海鹏等. 2,7-二辛基[1]苯并噻吩并[3,2-b]苯并噻吩(C8-BTBT)与MoS2界面的能级匹配与薄膜生长[J]. 发光学报, 2015,36(8): 875-881

LYU Lu, NIU Dong-mei, XIE Hai-peng etc. Energy Level Bending and Molecular Packing Mode of 2,7-diocty[1]benzothieno[3,2-b] benzothiophene(C8-BTBT) on MoS2[J]. Chinese Journal of Luminescence, 2015,36(8): 875-881
吕路, 牛冬梅, 谢海鹏等. 2,7-二辛基[1]苯并噻吩并[3,2-b]苯并噻吩(C8-BTBT)与MoS2界面的能级匹配与薄膜生长[J]. 发光学报, 2015,36(8): 875-881 DOI： 10.3788/fgxb20153608.0875.

LYU Lu, NIU Dong-mei, XIE Hai-peng etc. Energy Level Bending and Molecular Packing Mode of 2,7-diocty[1]benzothieno[3,2-b] benzothiophene(C8-BTBT) on MoS2[J]. Chinese Journal of Luminescence, 2015,36(8): 875-881 DOI： 10.3788/fgxb20153608.0875.

摘要

结合紫外光电子能谱(UPS)、X射线光电子能谱(XPS)和原子力显微镜(AFM)等实验手段系统研究了C8-BTBT沉积在层状MoS

基底上的界面能级匹配、薄膜生长和分子取向.研究发现C8-BTBT分子竖直生长在MoS

上

生长过程中界面的真空能级(VL)、最高占据态轨道(HOMO)和电离能(IP)都出现了非常规的弯曲现象.这种能级弯曲行为可归因于直立分子从界面相到体相的转变过程中

其分子倾斜角(

)存在一定的渐变

这种渐变会在沿表面法线方向诱导出一系列的层间电偶极

最终导致能级的弯曲.同时

的变化也会改变薄膜的表面极化强度

引起IP的逐渐减小.能级的弯曲在界面处形成类P-N结的效应会对C8-BTBT基电子器件的性能有很大的影响.

Abstract

The energy level alignment

film growth and molecular orientation of C8-BTBT on MoS

were studied by ultraviolet photoemission spectroscopy (UPS)

X-ray photoemission spectroscopy (XPS) and atomic force microscopy (AFM). The molecules adopt standing-up orientation on MoS

and the island growth mood were confirmed. The ionization potential (IP) decrease and highest occupied orbital (HOMO) down-shift were observed as the film thickness increased. IP decrease is ascribed to the gradual increase of the surface electric dipole pointing inwards when the molecular tilt angle (

) about the substrate normal decreases with the increasing of film thickness. The energy level shift results in an analogy P-N junction effect

which provides important guidance for C8-BTBT based electronic device design.

关键词

Keywords

references

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