Current Conduction Mechanism of The Resistive Memory Device with Single-layered Dense ZnO Nanorod Arrays

WANG Xue-liang; XU Jian-ping; SHI Shao-bo; ZHANG Xiao-song; ZHANG Xu-guang; ZHAO Xiang-gu

doi:10.3788/fgxb20153607.0795

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Current Conduction Mechanism of The Resistive Memory Device with Single-layered Dense ZnO Nanorod Arrays

更新时间：2020-08-12

- Current Conduction Mechanism of The Resistive Memory Device with Single-layered Dense ZnO Nanorod Arrays
- Chinese Journal of Luminescence Vol. 36, Issue 7, Pages: 795-800(2015)
- 作者机构：
  
  1. 天津理工大学材料物理研究所, 光电器件与显示材料教育部重点实验室, 天津市光电显示材料与器件重点实验室天津,300386
  2. 天津职业技术师范大学理学院天津,300222
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153607.0795
  CLC： TN304.21
- Received：15 April 2015，
  
  Revised：13 May 2015，
  
  Published：03 July 2015
- 稿件说明：
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王雪亮, 徐建萍, 石少波等. 单层密集ZnO纳米棒阻变器件的导电机制[J]. 发光学报, 2015,36(7): 795-800

WANG Xue-liang, XU Jian-ping, SHI Shao-bo etc. Current Conduction Mechanism of The Resistive Memory Device with Single-layered Dense ZnO Nanorod Arrays[J]. Chinese Journal of Luminescence, 2015,36(7): 795-800
王雪亮, 徐建萍, 石少波等. 单层密集ZnO纳米棒阻变器件的导电机制[J]. 发光学报, 2015,36(7): 795-800 DOI： 10.3788/fgxb20153607.0795.

WANG Xue-liang, XU Jian-ping, SHI Shao-bo etc. Current Conduction Mechanism of The Resistive Memory Device with Single-layered Dense ZnO Nanorod Arrays[J]. Chinese Journal of Luminescence, 2015,36(7): 795-800 DOI： 10.3788/fgxb20153607.0795.

摘要

制备了一种具有多级存储效应的密集ZnO纳米棒阵列阻变存储器件

借助

I-V

曲线和荧光光谱分析了器件的电流传导机制和阻变机制

发现器件在不同的电阻态下分别属于欧姆传导和空间电荷限制电流(SCLC)传导机制。正向电场作用使纳米棒表面耗尽区的氧空位V

密度增大

完善了电子传输的导电细丝通道

器件实现了由高阻态向低阻态的转变;在反向电压作用下

导电通道断裂

器件恢复到高阻态。

Abstract

A multi-level resistive memory device based on the single-layered dense ZnO nanorod arrays was prepared. The mechanisms of current conduction and resistive switching were studied by

I-V

curve and bias dependence of fluorescence spectra. The dominant conduction mechanisms for the two resistance states are concluded to be Ohmic conduction and space-charge-limited-current (SCLC) conduction

respectively. It is considered that the oxygen vacancies density at the surface depletion region of nanorods is influenced by charge loss in defects of V

and V

. The increased oxygen vacancies density under forward bias is obtained to build the conductive paths for the electron transportation

resulting in the switching from the high resistance state to the low resistance state. The high resistance state is re-obtained with the paths broken off under reverse voltage.

关键词

Keywords

references

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