High Efficiency GaN-based High-voltage Light-emitting Diode Chips and Its Chip-on-board Packaging

HUANG Xiao-sheng; HUANG Hua-mao; WANG Hong; LI Jing

doi:10.3788/fgxb20153606.0692

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High Efficiency GaN-based High-voltage Light-emitting Diode Chips and Its Chip-on-board Packaging

更新时间：2020-08-12

- High Efficiency GaN-based High-voltage Light-emitting Diode Chips and Its Chip-on-board Packaging
- Chinese Journal of Luminescence Vol. 36, Issue 6, Pages: 692-698(2015)
- 作者机构：
  
  华南理工大学物理与光电学院广东省光电工程技术研究开发中心,广东广州,510640
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153606.0692
  CLC： TN304;TN383+.1
- Received：16 March 2015，
  
  Revised：20 April 2015，
  
  Published：03 June 2015
- 稿件说明：
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黄晓升, 黄华茂, 王洪等. 高效率GaN基高压LED芯片的制备及COB封装[J]. 发光学报, 2015,36(6): 692-698

HUANG Xiao-sheng, HUANG Hua-mao, WANG Hong etc. High Efficiency GaN-based High-voltage Light-emitting Diode Chips and Its Chip-on-board Packaging[J]. Chinese Journal of Luminescence, 2015,36(6): 692-698
黄晓升, 黄华茂, 王洪等. 高效率GaN基高压LED芯片的制备及COB封装[J]. 发光学报, 2015,36(6): 692-698 DOI： 10.3788/fgxb20153606.0692.

HUANG Xiao-sheng, HUANG Hua-mao, WANG Hong etc. High Efficiency GaN-based High-voltage Light-emitting Diode Chips and Its Chip-on-board Packaging[J]. Chinese Journal of Luminescence, 2015,36(6): 692-698 DOI： 10.3788/fgxb20153606.0692.

摘要

为提升GaN基高压LED芯片的出光性能

优化了芯片发光单元之间隔离沟槽的宽度。当隔离沟槽宽度为20 m时

芯片的电学性能和光学性能最优。当注入电流为20 mA时

正向电压为50.72 V

输出光功率为373.64 mW

电光转换效率为36.83%。采用镜面铝基板和陶瓷基板进行了4颗芯片串联形式的COB封装。镜面铝基板的热导率和反射率均高于陶瓷基板

可提升HV-LED器件在大注入电流和高温时的发光性能。当注入电流为20 mA且基板温度为20 ℃时

镜面铝基板封装的HV-LED器件的正向电压是198.9 V

发光效率达122.2 lm/W。

Abstract

In order to enhance the light-output performance of GaN-based high-voltage light-emitting diodes (HV-LEDs)

the width of isolation trench between light-emission cells was optimized. The electrical and optical performance is the best while the width is 20 m. When the injection current is 20 mA

the forward voltage is 50.72 V

the light-output power is 373.64 mW

and the electro-optical conversion efficiency is 36.83%. Then

four chips were connected in series and packaged in reflective aluminum substrate or ceramic substrate using chip-on-board (COB) technology. Since the thermal conductivity and reflectivity are higher for reflective aluminum substrate comparing to ceramic substrate

the packaged HV-LEDs with reflective aluminum substrate show better light-output performance at a high injection current or a high temperature. On condition that the injection current is 20 mA and the substrate temperature is 20 ℃

the forward voltage and the light-output efficiency of HV-LEDs packaged using reflective aluminum substrate are 198.9 V and 122.2 lm/W

respectively.

关键词

Keywords

references

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