ZOU Jun, LI Yang, ZHU Wei etc. Optical Characterization of Three-dimensional Light-emitting LED[J]. Chinese Journal of Luminescence, 2015,36(6): 657-660
ZOU Jun, LI Yang, ZHU Wei etc. Optical Characterization of Three-dimensional Light-emitting LED[J]. Chinese Journal of Luminescence, 2015,36(6): 657-660 DOI: 10.3788/fgxb20153606.0657.
Optical Characterization of Three-dimensional Light-emitting LED
The luminescence performance characterized by luminous flux
color temperature
chromaticity coordinate of three-dimensional light emitting diodes (LEDs) has been investigated by using different phosphor coating methods. The LED die was directly coating with mixed phosphors and silicone which have the maximum total luminous flux. However
this encapsulation incurs luminous uneven problem of front and back which limit three-dimensional luminescence application. Therefore
this work attempts to use the silicon and spreading powder to change the light path on the basis of less loss of luminous flux. Experimental results indicate that the brightness uniformity can be improved when increasing silicon layer between LED die and phosphor
while spreading powder layer would induce significant light attenuation. Moreover
the three packing have similar light angle. Therefore
silicon layer provides an alternative packing solution for three-dimensional LED light application.
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references
Chang M H, Das D, Varde P V, et al. Light emitting diodes reliability review [J]. Microelectron. Reliab., 2012, 52(5):762-782.
Wang C P, Chen T T, Fu H K, et al. Analysis of thermal characteristics and mechanism of degradation of flip-chip high power LEDs [J]. Microelectron. Reliab., 2014, 52(4):698-703.
Zhong G M, Du X Q, Tian J. Simulation and analysis of light extraction efficiency of GaN-based flip-chip light-emitting diodes [J]. Chin. J. Lumin.(发光学报), 2011, 32(8):773-778 (in Chinese).
Kim H, Lee S N, Cho J. Electrical and optical characterization of GaN-based light-emitting diodes fabricated with top-emission and flip-chip structures [J]. Mater. Sci. Semicond. Proc., 2010, 13(3):180-184.
Liu Y, Leung Stanley Y Y, Zhao J, et al. Thermal and mechanical effects of voids within flip chip soldering in LED packages [J]. Microelectron. Reliab., 2014, 54(9-10):2028-2033.
Li L, Fang Y Z, Zou J, et al. Non-polar ZnO thin films and LED devices [J]. Adv. Mater. Res., 2014, 1053:373-380.
Li Y, Dong S S, Wang Y R, et al. Optical characterization of light-emitting diodes fabricated with vertical and flip-chip structure [J]. Electro-Opt. Technol. Appl.(光电技术应用), 2014, 29(5):47-51 (in Chinese).
Qian K Y, Zheng D S, Luo Y. Thermal dispersion of GaN-based power LEDs [J]. Semicond. Optoelectron.(半导体光电), 2006, 27(3):236-239 (in Chinese).
Ma X J, Wu L G, Dai S X, et al. Thermal analysis of high-power LED downlight [J]. China Illumin. Eng. J.(照明工程学报), 2011, 22(6):18-21 (in Chinese).
Li A Y, Zhu W Z. Key factors in cooling of high-power LED packages [J]. J. Xiamen Univ. Technol.(厦门理工学院学报), 2011, 19(4):10-13 (in Chinese).
Wang Y R, Li Y F, Zou J, et al. White LED accelerated aging performance analysis [J]. China Light & Lighting (中国照明电器), 2014(10):43-46 (in Chinese).
Zhang S D, Wang F C, Zou J. Influence research on LED encapsulation light source from YAG phosphor with different particle size [J]. Electro-Opt. Technol. Appl.(光电技术应用), 2014, 29(4):21-23 (in Chinese).
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Related Author
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Related Institution
College of Laser Engineering, Beijing University of Technology, Beijing 100124, China
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, China
Graduate School of the Chinese Academy of Science, Beijing 100049, China