Performance of GaN-based Vertical Structure Light Emitting Diodes with Hybrid Quantum Wells

CAI Zhen-zhun; HU Xiao-long; LIU Li; WANG Hong

doi:10.3788/fgxb20153606.0639

您当前的位置：

首页 >

文章列表页 >

Performance of GaN-based Vertical Structure Light Emitting Diodes with Hybrid Quantum Wells

更新时间：2020-08-12

- Performance of GaN-based Vertical Structure Light Emitting Diodes with Hybrid Quantum Wells
- Chinese Journal of Luminescence Vol. 36, Issue 6, Pages: 639-644(2015)
- 作者机构：
  
  华南理工大学物理与光电学院广东省光电工程技术研究中心,广东广州,510640
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153606.0639
  CLC： TN383+.1;TN312+.8
- Received：03 February 2015，
  
  Revised：04 April 2015，
  
  Published Online：21 April 2015，
  
  Published：03 June 2015
- 稿件说明：
移动端阅览
蔡镇准, 胡晓龙, 刘丽等. 基于混合型量子阱的GaN基垂直结构发光二极管性能[J]. 发光学报, 2015,36(6): 639-644

CAI Zhen-zhun, HU Xiao-long, LIU Li etc. Performance of GaN-based Vertical Structure Light Emitting Diodes with Hybrid Quantum Wells[J]. Chinese Journal of Luminescence, 2015,36(6): 639-644
蔡镇准, 胡晓龙, 刘丽等. 基于混合型量子阱的GaN基垂直结构发光二极管性能[J]. 发光学报, 2015,36(6): 639-644 DOI： 10.3788/fgxb20153606.0639.

CAI Zhen-zhun, HU Xiao-long, LIU Li etc. Performance of GaN-based Vertical Structure Light Emitting Diodes with Hybrid Quantum Wells[J]. Chinese Journal of Luminescence, 2015,36(6): 639-644 DOI： 10.3788/fgxb20153606.0639.

摘要

为解决GaN基垂直结构发光二极管(VS-LEDs)在大电流驱动时效率下降的问题

制作了具有耦合量子阱(CQWs)和传统量子阱(NQWs)的混合型量子阱(HQWs)结构VS-LEDs。与NQWs结构VS-LEDs相比

HQWs结构VS-LEDs在350 mA输入电流下的正向偏压降低0.68 V

光输出功率提升53.0%

并有更好的电流响应效率。同时

NQWs结构和HQWs结构VS-LEDs的外量子效率分别下降到最大值的37.7%和67.5%

表明采用HQWs能使LEDs的效率下降得到大幅缓解。

Abstract

In order to solve the problem that GaN-based vertical structure LEDs (VS-LEDs) suffer from efficiency droop under high current injection level

hybrid quantum wells (HQWs) with coupled quantum wells (CQWs) and normal quantum wells (NQWs) were employed. Compared to VS-LEDs with NQWs

VS-LEDs with HQWs had better properties

wherein forward voltage reduced by 0.68 V and light-output power increased by 53.0% at a forward current of 350 mA. Meanwhile

the relative external quantum efficiencies of VS-LEDs with NQWs and VS-LEDs with HQWs reduced to 37.7% and 67.5% of their maximum

respectively. The results reveal that the efficiency droop of LEDs can become less severe by exploiting HQWs.

关键词

Keywords

references

Lin C F, Yang C C, Chen J F, et al. Fabrication of the InGaN-based light-emitting diodes through a photoelectrochemical process [J]. IEEE Photon. Technol. Lett., 2009, 21(16):1142-1144.

Song J J, Zhang Y Y, Zhao F, et al. Effect of the number of quantum wells on InGaN/AlGaN LED [J]. Chin. J. Lumin.(发光学报), 2012, 33(12):1368-1372 (in Chinese).

Chu C F, Cheng C C, Liu W H, et al. High brightness GaN vertical light-emitting diodes on metal alloy for general lighting application [J]. Proc. IEEE, 2010, 98(7):1197-1207.

Liu W J, Hu X L, Zhang J Y, et al. Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes [J]. Opt. Mater., 2012, 34(8):1327-1329.

Monemar B, Sernelius B E. Defect related issues in the "current roll-off" in InGaN based light emitting diodes [J]. Appl. Phys. Lett., 2007, 91(18):181103-1-3.

Rozhansky I V, Zakheim D A. Analysis of the causes of the decrease in the electrolumine-scence efficiency of AlGaInN light-emitting-diode hetero structures at high pumping density [J]. Semiconductors, 2006, 40(7):839-845.

Rozhansky I V, Zakheim D A. Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping [J]. Phys. Stat. Sol.(a), 2007, 204(1):227-230.

Kim M H, Schubert M F, Dai Q, et al. Origin of efficiency droop in GaN-based light-emitting diodes [J]. Appl. Phys. Lett., 2007, 91(18):183507-1-3.

Schubert M F, Xu J R, Kim J K, et al. Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop [J]. Appl. Phys. Lett., 2008, 93(4):041102-1-3.

Shen Y C, Mueller G O, Watanabe S, et al. Auger recombination in InGaN measured by photoluminescence [J]. Appl. Phys. Lett., 2007, 91(14):141101-1-3.

Efremov A A, Bochkareva N I, Gorbunov R I, et al. Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs [J]. Semiconductors, 2006, 40(5):605-610.

Xie J Q, Ni X F, Fan Q, et al. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers [J]. Appl. Phys. Lett., 2008, 93(12):121107-1-3.

Ni X F, Fan Q, Shimada R, et al. Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells [J]. Appl. Phys. Lett., 2008, 93(17):171113-1-3.

ZhangJ Y, Cai L E, Zhang B P, et al. Efficient hole transport in asymmetric coupled InGaN multiple quantum wells [J]. Appl. Phys. Lett., 2009, 95(16):161110-1-3.

Kuokstis E, Yang J W, Simin G, et al. Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells [J]. Appl. Phys. Lett., 2002, 80(6):977-979.

David A, Grundmann M J, Kaeding J F, et al. Carrier distribution in (0001) InGaN/GaN multiple quantum well light-emitting diodes [J]. Appl. Phys. Lett., 2008, 92(5):053502-1-3.

Liu J P, Ryou J H, Dupuis R D, et al. Barrier effect on hole transport and carrier distribution in InGaN/GaN multiple quantum well visible light-emitting diodes [J]. Appl. Phys. Lett., 2008, 93(2):021102-1-3.

Views

171

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

GaN Grown on Sputtered AlN/Mo/Sc_0.2Al_0.8N Composite Structure with Different Mo Thickness

Effect of SiO₂ Patterned Sapphire Substrate on GaN Growth and LED Luminescence Performance

Fabrication and Characterization of GaN-based White LED on 4-inch Patterned Sapphire Substrate

Surface and Luminescence Properties of GaAs(100) by Hydrazine Solution Passivation

Dependence of Internal Quantum Efficiency of GaN-based Yellow LED with Si Substrate on Electron Blocking Layer with Variable Al Composition

Related Author

LI Jiahao

HAN Jun

XING Yanhui

DONG Shengyuan

WANG Binghui

REN Jianhua

ZENG Zhongming

ZHANG Baoshun

Related Institution

Suzhou Institute of Nano-Tech and Nano-Bionics， Chinese Academy of Sciences

State Key Laboratory of High Power Semiconductor Lasers， Changchun University of Science and Technology

Key Laboratory of Opto-electronics Technology， Ministry of Education， Faculty of Information Technology， Beijing University of Technology

Fujian Zoomking Technology Co., Ltd.

School of Materials, Xiamen University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰