Vertical External Cavity Surface Emitting Laser with Dielectric Film Integrated on Substrate

LI Xiu-shan; NING Yong-qiang; CUI Jin-jiang; ZHANG Xing; JIA Peng; QIN Li; ZHANG Jin-long

doi:10.3788/fgxb20153605.0572

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Vertical External Cavity Surface Emitting Laser with Dielectric Film Integrated on Substrate

更新时间：2020-08-12

- Vertical External Cavity Surface Emitting Laser with Dielectric Film Integrated on Substrate
- Chinese Journal of Luminescence Vol. 36, Issue 5, Pages: 572-576(2015)
- 作者机构：
  
  1. 中国科学院苏州生物医学工程技术研究所,江苏苏州,215163
  2. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  3. 中国科学院大学北京,100049
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153605.0572
  CLC： TN248.4
- Received：13 February 2015，
  
  Revised：10 March 2015，
  
  Published：03 May 2015
- 稿件说明：
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李秀山, 宁永强, 崔锦江等. 介质膜集成衬底垂直外腔面发射激光器[J]. 发光学报, 2015,36(5): 572-576

LI Xiu-shan, NING Yong-qiang, CUI Jin-jiang etc. Vertical External Cavity Surface Emitting Laser with Dielectric Film Integrated on Substrate[J]. Chinese Journal of Luminescence, 2015,36(5): 572-576
李秀山, 宁永强, 崔锦江等. 介质膜集成衬底垂直外腔面发射激光器[J]. 发光学报, 2015,36(5): 572-576 DOI： 10.3788/fgxb20153605.0572.

LI Xiu-shan, NING Yong-qiang, CUI Jin-jiang etc. Vertical External Cavity Surface Emitting Laser with Dielectric Film Integrated on Substrate[J]. Chinese Journal of Luminescence, 2015,36(5): 572-576 DOI： 10.3788/fgxb20153605.0572.

摘要

垂直外腔面发射激光器(VECSEL)可以实现大功率的高光束质量输出。针对外腔制作工艺复杂、腔体结构松散的缺点

研制了一种介质膜集成衬底表面外腔底面发射激光器。将衬底表面生长的多层介质绝缘薄膜与N-DBR、P-DBR共同构成复合腔结构

衬底充当外腔。该结构能够抑制高阶模式

进而优化输出光谱及远场发散角等光束特性。在已有的理论指导下

制作了有源区直径为200 m、外腔腔长250 m的VECSEL。室温下

向器件连续直流注入3.4 A

测试得到输出功率为260 mW

远场发散角的半角宽度为3.8

光谱半高全宽为0.046 nm。与常规结构底面发射VCSEL进行比较

发现VECSEL器件的光束质量得到了明显改善

实验结果与理论仿真结果有较好的一致性。

Abstract

Vertical cavity surface emitting laser (VCSEL) with external cavity which is filled by dielectric materials or air can achieve good beam quality and high power. Aiming at the problem of complex production process and loose structure of the external cavity

a kind of surface emitting laser with the dielectric film integrated on external cavity bottom substrate was designed. Multilayer dielectric insulation films grown on the surface of substrate

N-DBR

and P-DBR composed the coupled cavity structure

and the substrate was served as external cavity of VECSEL. This structure can suppress high order mode

so it can optimize the output spectrum and far-field divergence angle of beam characteristics. Based on the previous theory

we manufactured a VECSEL with active area of 200 m in diameter and external cavity length of 250 m. The device is carried out with continuous DC current of 3.4 A at room temperature

and the power is 260 mW

the divergence angle of far field is 3.8

the full width at half maximum of spectrum is 0.046 nm. Obviously

compared with conventional structure of bottom emitting VCSEL

the beam quality of VECSEL devices is improved.

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Keywords

references

Rao Y, Yang W J, Chase C, et al. Long-wavelength VCSEL using high-contrast grating [J]. IEEE J. Sel. Top. Quant. Electron., 2013, 19(4):1701311-1701311.

Zhang L S, Ning Y Q, Zhang X, et al. Optimization of n-DBR in high power vertical cavity surface emiting laser under a short pulsed operation [J]. Chin. J. Lasers (中国激光), 2012, 39(5):0502003-1-8 (in Chinese).

Zhang J W, Ning Y Q, Zhang X, et al. In situ monitoring and analysis of normalized reflectance and reflectance anisotropy of multilayer AlGaAs structure [J]. Chin. J. Lumin.(发光学报), 2012, 33(5):509-514 (in Chinese).

Zhang J S, Liu X L, Cui J J, et al. High peak power 808 nm vertical cavity surface emitting laser array [J]. Chin. J. Lumin.(发光学报), 2014, 35(9):1098-1103 (in Chinese).

Guo P, Sun T, Yang W J, et al. Optical phase modulation based on directly modulated reflection-mode OIL-VCSEL [J]. Opt. Express, 2013, 21(19):22114-22123.

Zhang J S, Ning Y Q, Zhang J L, et al. Temperature characteristic analysis of 808 nm vertical cavity surface emitting laser arrays [J]. Chin. J. Lumin.(发光学报), 2013, 34(12):1636-1640 (in Chinese).

Blokhin S A, Maleev N A, Kuzmenkov A G, et al. Multi-mode to single-mode switching caused by self-heating in bottom-emitting intra-cavity contacted 960 nm VCSELs [J]. SPIE, 2012, 8276:82760W-1-7.

Zhang J W, Ning Y Q, Zhang X, et al. Gain cavity mode detuning vertical cavity surface emitting laser operating at the high temperature [J]. Chin. J. Lasers (中国激光), 2013, 40 (5):0502001-1-8 (in Chinese).

Kroner A, Rinaldi F, Ostermann J M, et al. High-performance single fundamental mode AlGaAs VCSELs with mode-selective mirror reflectivities [J]. Opt. Commun., 2007, 270:332-335.

Alias M S, Shaari S, Leisher P O, et al. Single transverse mode control of VCSEL by photonic crystal and trench patterning [J]. Photon. Nanostruct. Fundament. Appl., 2010, 8(1):38-46.

Al-Omari A N, Lear K L. High-speed 980 nm vertical cavity surface emitting lasers with a multi-oxide layer structure for single-mode operation [J]. IET Optoelectron., 2011, 5(2):57-61.

Unold H J, Mahmoud S W Z, Jager R, et al. Improving single-mode VCSEL performance by introducing a long monolithic cavity [J]. IEEE Photon. Technol. Lett., 2000, 12(8):939-941.

Yang Z H, Leger J R, Shchegrov A V. Three-mirror resonator with aspheric feedback mirror for laser spatial mode selection and mode shaping [J]. IEEE J. Quant. Electron., 2004, 40(9):1258-1269.

Zhou D, Mawst L J. High-power single-mode antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers [J]. IEEE J. Quant. Electron., 2002, 38(12):1599-1606.

Koyama F. High contrast grating for spatial mode filtering and mode control of VCSELs [J]. SPIE, 2012, 8270:827005-1-8.

Shi J W, Chen C C, Wu Y S, et al. High-power and high-speed Zn-diffusion single fundamental-mode vertical-cavity surface-emitting lasers at 850-nm wavelength [J]. IEEE Photon. Technol. Lett., 2008, 20(13):1121-1123.

Keeler G A, Serkland D K, Geib K M, et al. Micromirrors for wafer-scale fabrication of electrically pumped VECSELs[C]//Conference on Lasers and Electro-Optics, San Francisco:IEEE, 2004:CTuC6.

Kardosh I, Demaria F, Rinaldi F, et al. High-power single transverse mode vertical-cavity-surface-emitting lasers with monolithically integrated curved dielectric mirrors [J]. IEEE Photon. Technol. Lett., 2008, 20(24):2084-2086.

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