Effect of Wedged Petaloid Configuration on Luminescence Characteristics of Si-LED Fabricated in Standard CMOS Process

CUI Meng; XIE Sheng; MAO Lu-hong; GUO Wei-lian; ZHANG Shi-lin; WU Lei; XIE Rong

doi:10.3788/fgxb20153605.0552

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Effect of Wedged Petaloid Configuration on Luminescence Characteristics of Si-LED Fabricated in Standard CMOS Process

更新时间：2020-08-12

- Effect of Wedged Petaloid Configuration on Luminescence Characteristics of Si-LED Fabricated in Standard CMOS Process
- Chinese Journal of Luminescence Vol. 36, Issue 5, Pages: 552-556(2015)
- 作者机构：
  
  天津大学电子信息工程学院天津,300072
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153605.0552
  CLC： TN383
- Received：11 February 2015，
  
  Revised：24 March 2015，
  
  Published：03 May 2015
- 稿件说明：
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崔猛, 谢生, 毛陆虹等. 楔形瓣状结构对正向注入型Si-LED发光特性的影响[J]. 发光学报, 2015,36(5): 552-556

CUI Meng, XIE Sheng, MAO Lu-hong etc. Effect of Wedged Petaloid Configuration on Luminescence Characteristics of Si-LED Fabricated in Standard CMOS Process[J]. Chinese Journal of Luminescence, 2015,36(5): 552-556
崔猛, 谢生, 毛陆虹等. 楔形瓣状结构对正向注入型Si-LED发光特性的影响[J]. 发光学报, 2015,36(5): 552-556 DOI： 10.3788/fgxb20153605.0552.

CUI Meng, XIE Sheng, MAO Lu-hong etc. Effect of Wedged Petaloid Configuration on Luminescence Characteristics of Si-LED Fabricated in Standard CMOS Process[J]. Chinese Journal of Luminescence, 2015,36(5): 552-556 DOI： 10.3788/fgxb20153605.0552.

摘要

基于标准CMOS工艺的p

源/漏区和n阱

设计了两种楔形瓣状结构的正向注入型硅基发光二极管(Si-LED)

采用UMC 0.18 m 1P6M CMOS工艺设计制备。测试结果表明

正向注入型p

/n-well二极管的发射波长位于近红外波段

峰值波长在1 130 nm附近

且工作电压小于2 V

与标准CMOS电路兼容。其中

八瓣结构的Si-LED (TS2)在200 mA时的发光功率可达1 200 nW

且未出现饱和

而注入电流为40 mA时的最大功率转换效率达5.810

-6

约为四瓣结构器件(TS1)的2倍。所研制的Si-LED具有工作电压低、转换效率高等优点

有望在光互连领域得到应用。

Abstract

Based on p

source/drain region and n-well of standard CMOS technology

two forward-injection-type Si-LEDs with different petaloid configuration were designed and fabricated by UMC 0.18 m 1P6M CMOS process. The measurement results indicate that the emission spectra of both Si-LEDs locate at near-IR region with peak wavelength around 1 130 nm

and the devices can operate properly below 2 V. When the device TS2 with eight-petal configuration is forward-biased at 200 mA

its optical power increases to 1 200 nW without saturation

and the maximum power conversion efficiency reaches up to 5.810

-6

at the current of 40 mA

which is almost double that of the device TS1 with four-petal. Due to the features of low operating voltage and high conversion efficiency

the device TS2 is highly attractive for future optoelectronic applications.

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references

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