Effect of p-InGaN Layer Thickness on The Performance of p-i-n InGaN Solar Cells

ZHOU Mei; ZHAO De-gang

doi:10.3788/fgxb20153605.0534

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Effect of p-InGaN Layer Thickness on The Performance of p-i-n InGaN Solar Cells

更新时间：2020-08-12

- Effect of p-InGaN Layer Thickness on The Performance of p-i-n InGaN Solar Cells
- Chinese Journal of Luminescence Vol. 36, Issue 5, Pages: 534-538(2015)
- 作者机构：
  
  1. 中国科学院半导体研究所集成光电子学国家重点实验室北京,100083
  2. 中国农业大学理学院应用物理系北京,100083
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153605.0534
  CLC： TN304.2
- Received：10 February 2015，
  
  Revised：25 March 2015，
  
  Published：03 May 2015
- 稿件说明：
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周梅, 赵德刚,. p-InGaN层厚度对p-i-n结构InGaN太阳电池性能的影响及机理[J]. 发光学报, 2015,36(5): 534-538

ZHOU Mei, ZHAO De-gang,. Effect of p-InGaN Layer Thickness on The Performance of p-i-n InGaN Solar Cells[J]. Chinese Journal of Luminescence, 2015,36(5): 534-538
周梅, 赵德刚,. p-InGaN层厚度对p-i-n结构InGaN太阳电池性能的影响及机理[J]. 发光学报, 2015,36(5): 534-538 DOI： 10.3788/fgxb20153605.0534.

ZHOU Mei, ZHAO De-gang,. Effect of p-InGaN Layer Thickness on The Performance of p-i-n InGaN Solar Cells[J]. Chinese Journal of Luminescence, 2015,36(5): 534-538 DOI： 10.3788/fgxb20153605.0534.

摘要

研究了p-InGaN层厚度对p-i-n结构InGaN太阳电池性能的影响。模拟计算发现

随着p-InGaN层厚度的增加

InGaN太阳电池效率降低。较差的p-InGaN欧姆接触特性会破坏InGaN太阳电池性能。计算结果还表明

无论欧姆接触特性好坏

随着p-InGaN层厚度的增加

短路电流下降是导致InGaN电池效率降低的主要原因。选择较薄的p-InGaN层有利于提高p-i-n结构InGaN太阳电池的效率。

Abstract

The effects of p-InGaN layer thickness on the performance of p-i-n structure InGaN solar cells were investigated. Through theory calculation

it is found that the conversion efficiency of InGaN solar cells decreases with the increasing of p-InGaN thickness. The poor Ohmic contact properties of metal to p-InGaN also have a negative effect on the performance of InGaN solar cells. The short-circuit current reduces obviously with the increasing of p-InGaN thickness

simultaneously the conversion efficiency of InGaN solar cells decreases. The performance of InGaN solar cell could be improved by employing a relatively thin p-InGaN layer.

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references

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