Influence of Substrate Heating and Electrodes Modifying on Performance of Organic Field-effect Transistor

ZHENG Ling-cheng; JIANG Jing; WANG Qian; WU Feng; CHENG Xiao-man

doi:10.3788/fgxb20153605.0521

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Influence of Substrate Heating and Electrodes Modifying on Performance of Organic Field-effect Transistor

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- Influence of Substrate Heating and Electrodes Modifying on Performance of Organic Field-effect Transistor
- Chinese Journal of Luminescence Vol. 36, Issue 5, Pages: 521-525(2015)
- 作者机构：
  
  1. 天津理工大学理学院天津,300384
  2. 天津理工大学教育部显示材料与光电器件重点实验室天津光电材料与器件重点实验室天津,300384
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153605.0521
  CLC： O47
- Received：02 February 2015，
  
  Revised：13 March 2015，
  
  Published：03 May 2015
- 稿件说明：
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郑灵程, 蒋晶, 王倩等. 衬底加热和电极修饰对提高有机场效应晶体管性能的影响[J]. 发光学报, 2015,36(5): 521-525

ZHENG Ling-cheng, JIANG Jing, WANG Qian etc. Influence of Substrate Heating and Electrodes Modifying on Performance of Organic Field-effect Transistor[J]. Chinese Journal of Luminescence, 2015,36(5): 521-525
郑灵程, 蒋晶, 王倩等. 衬底加热和电极修饰对提高有机场效应晶体管性能的影响[J]. 发光学报, 2015,36(5): 521-525 DOI： 10.3788/fgxb20153605.0521.

ZHENG Ling-cheng, JIANG Jing, WANG Qian etc. Influence of Substrate Heating and Electrodes Modifying on Performance of Organic Field-effect Transistor[J]. Chinese Journal of Luminescence, 2015,36(5): 521-525 DOI： 10.3788/fgxb20153605.0521.

摘要

通过衬底加热和氧化钼(MoO

)修饰源漏极制备了并五苯有机场效应晶体管。研究了衬底温度和电极修饰层厚度对器件性能的影响。实验结果表明:当衬底温度为60℃、MoO

修饰层为10 nm时

器件性能获得了显著增强

场效应迁移率由原来的3.3910

-3

/(Vs)提高到2.2510

-1

/(Vs)

阈值电压由12 V降低到3 V。器件性能的改善归因于:衬底加热可以优化有源层形貌

改善载流子传输;而MoO

修饰层显著降低了电极与有源层之间的接触势垒

提高了载流子的注入。因此

衬底加热与电极修饰对于制备高性能有机场效应晶体管是不可或缺的优化手段。

Abstract

The pentacene-based organic field-effect transistor (OFET) with a thin transition metal oxide (MoO

) layer between pentacene and metal (Al) source/drain electrodes was fabricated by using substrate heating. The effects of substrate heating and MoO

modifying electrodes on their performance were investigated. Comparing with OFET which only has metal Al source/drain electrodes

the performance of device with 10 nm MoO

buffer layer is significantly enhanced under 60℃ substrate temperature. The field-effect mobility increased from 3.3910

-3

/(Vs) to 2.2510

-1

/(Vs)

meanwhile the threshold voltage decreased from 12 V to 3 V

respectively. The enhanced performances are attributed to the improvement of the high efficiency of carrier transportation and injection

which were introduced by heating substrate and inserting MoO

buffer layer between electrodes and active layer. Therefore

the means of substrate heating and electrodes modification are indispensable for high performance OFET.

关键词

Keywords

references

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