Ambipolar Organic Thin Film Transistors with Double Heterojunction

DUAN Peng-fei; HU Yong-sheng; GUO Xiao-yang; LIU Xing-yuan; FAN Yi

doi:10.3788/fgxb20153604.0480

您当前的位置：

首页 >

文章列表页 >

Ambipolar Organic Thin Film Transistors with Double Heterojunction

更新时间：2020-08-12

- Ambipolar Organic Thin Film Transistors with Double Heterojunction
- Chinese Journal of Luminescence Vol. 36, Issue 4, Pages: 480-484(2015)
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院大学北京,100049
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153604.0480
  CLC： TN386.6
- Received：07 November 2014，
  
  Revised：03 December 2014，
  
  Published Online：31 December 2014，
  
  Published：03 April 2015
- 稿件说明：
移动端阅览
端鹏飞, 胡永生, 郭晓阳等. 双异质结结构的双极型有机薄膜晶体管的研制[J]. 发光学报, 2015,36(4): 480-484

DUAN Peng-fei, HU Yong-sheng, GUO Xiao-yang etc. Ambipolar Organic Thin Film Transistors with Double Heterojunction[J]. Chinese Journal of Luminescence, 2015,36(4): 480-484
端鹏飞, 胡永生, 郭晓阳等. 双异质结结构的双极型有机薄膜晶体管的研制[J]. 发光学报, 2015,36(4): 480-484 DOI： 10.3788/fgxb20153604.0480.

DUAN Peng-fei, HU Yong-sheng, GUO Xiao-yang etc. Ambipolar Organic Thin Film Transistors with Double Heterojunction[J]. Chinese Journal of Luminescence, 2015,36(4): 480-484 DOI： 10.3788/fgxb20153604.0480.

摘要

制备了基于F

CuPc和CuPc的双异质结结构的双极型有机薄膜晶体管。该器件的载流子迁移率是相同工艺制备的F

CuPc和CuPc双层单异质结有机薄膜晶体管器件的4~5倍。同时

该双异质结结构还能调整载流子的阈值电压

减少双层结构对薄膜厚度等工艺条件的苛刻要求。这种双异质结结构为提升双极型有机薄膜晶体管器件的性能提供了一种有效方法。

Abstract

Ambipolar organic thin film transistors (OTFTs) based on copper hexadecafluorophthalocyanine (F

CuPc) and copper phthalocyanine (CuPc) with double heterojunction were fabricated. The carrier mobility was 4-5 times enhanced compared with that of double layer-architecture devices under the same process. The double heterojunction effect was attributed to the great enhancement which showed an effective way to promote the performance of ambipolar OTFTs. The double heterojunction architecture also provided another way to adjust the carrier threshold voltage and decrease the critical dependence of the film thicknesses in double layer architecture.

关键词

Keywords

references

Dimitrakopoulos C D, Malenfant P R L. Organic thin film transistors for large area electronics [J]. Adv. Mater., 2002, 14(2):99-117.

Hu Y S, Lu Q P, Li H, et al. Low-voltage, high-mobiliy air-stable ambipolar organic field-effect transistors with a voltage-dependent off-current state and modest operational stability [J]. Appl. Phys. Express, 2013, 6(5):051602-1-5.

Kim D K, Oh J D, Shin E S. et al. Study on copper phthalocyanine and perylene-based ambipolar organic light-emitting field-effect transistors produced using neutral beam deposition method [J]. J. Appl. Phys., 2014, 115(16):164503-1-5.

Cosseddu P, Bonfiglio A. Influence of device geometry in the electrical behavior of all organic ambipolar field effect transistors [J]. Appl. Phys. Lett., 2010, 97(20):203305-1-3.

Cho S N, Lee J H, Tong M H, et al. Poly(diketopyrrolopyrrole- benzothiadiazole) with ambipolarity approaching 100% equivalency [J]. Adv. Funct. Mater., 2011, 21:1910-1916.

Zaumseil J, Sirringhaus H. Electron and ambipolar transport in organic feild-effect transistors [J]. Chem. Rev., 2007, 107(4):1296-1323.

Wang X H, Hu D Q, Ding Y S, et al. Solution based fabrication of carbon nantube electrode for organic thin film transistor [J]. Chin. J. Lumin.(发光学报), 2013, 34(6):782-786 (in Chinese).

Generali G, Capelli R, Toffanin S, et al. Ambipolar field-effect transistor based on ,-diperfiuoroquaterthiophene vertical heterojunction [J]. Microelectron. Reliab., 2010, 50(9-11):1861-1865.

Shkunov M, Simms R, Heeney M, et al. Ambipolar field-effect transistors based on solution-processable blends of thieno [2,3-b] thiophene terthiophene polymer and methanofullerenes [J]. Adv. Mater., 2005, 17(21):2608-2612.

Hayashi Y, Kanamori H, Yamada I, et al. Facile fabrication method for p/n-type and ambipolar transport polyphenylenevinylene-based thin-film field-effect transistors by blending C60 fullerene [J]. Appl. Phys. Lett., 2005, 86(5):052104-1-3.

Rost C, Gundlach D J, Karg S, et al. Ambipolar organic field-effect transistor based on an organic heterostructure [J]. J. Appl. Phys., 2004, 95(10):5782-5786.

Meijer E J, De Leeuw D M, Steayesh S, et al. Solution-pricessed ambipolar organic field-effect transistors and inverters [J]. Nat. Mater., 2003, 2(10):678-682.

Ye R B, Baba M, Suzuki K, et al. Improved performance of fluorinated copper phthalocyanine thin film transistors using an organic pn junction: Effect of copper phthalocyanine film thickness [J]. Thin Solid Films, 2009, 517(9):3001-3004.

Ye R B, Baba M, Mori K. High-performance air-stable ambipolar organic thin-film transistor based on F16CuPc and CuPc [J]. Jpn. J. Appl. Phys. Part 2, 2005, 44:L581-L585.

Wang J, Wang H, Yan X, et al. Heterojunction ambipolar organic transistors fabric by a two-step vacuum-deposition process [J]. Adv. Funct. Mater., 2006, 16(6):824-830.

Gu W, Li X F, Zhang H, et al. The influences of substrate temperature on ambipolar organic heterojunction transistors [J]. Thin Solid Films, 2010, 519(1):439-442.

Wei Z M, Xu W, Hu W P, et al. Air-stable ambipolar organic field-effect transistor based on a novel bi-channel structure [J]. J. Mater. Chem., 2008, 18(21):2420-2422.

Li L Q, Li H X, Song Y B, et al. Air-stable ambipolar field-effect transistors based on copper phthalocyanine and tetracyanoquinodimethane [J]. Res. Chem. Intermed., 2008, 34(2-3):147-153.

Hu Y, Tsubasa K, Hidenori O. Ambipolar pentacene/C60-based field-effect transistors with high hole and electron mobilities in ambient atmosphere [J]. Appl. Phys. Lett., 2009, 94(2):023305-1-3.

Yan D H, Wang H B, Du B X. Organic Heterojunction Semiconductors [M]. Beijing: Science Press, 2008:79-80 (in Chinese).

Views

193

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

A-IGZO Thin-film Transistors Integrated AMOLED Pixel Circuit with Data Line Controlled Light-emitting

Nonlinear Injection Model of Organic Field Effect Transistors

Effects of Negative Charge Layer on The Threshold Voltage of a-IGZO TFT

THE DIRECT EVIDENCE OF THE ACCELERATING ACTION OF SiO₂ IN TFEL DEVICES

Related Author

DENG Lian-wen

HUANG Sheng-xiang

LIAO Cong-wei

YU Tian-bao

LU Li

WANG Lan-lan

LYU Wen-li

PENG Ying-quan

Related Institution

School of Physical Science and Electronics, Central South University

Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China

College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, China

College of Science, Shaanxi University of Science and Technology

Institute of Material Physics, Tianjin Institute of Technology, Tianjin 300191

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰