Effect of Temperature on The Nucleation and Epitaxial Films of ZnO on Si Substrates Grown by MOCVD

CUI Xi-jun; ZHUANG Shi-wei; ZHANG Jin-xiang; SHI Zhi-feng; WU Bin; DONG Xin; ZHANG Yuan-ta

doi:10.3788/fgxb20153604.0408

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Effect of Temperature on The Nucleation and Epitaxial Films of ZnO on Si Substrates Grown by MOCVD

更新时间：2020-08-12

- Effect of Temperature on The Nucleation and Epitaxial Films of ZnO on Si Substrates Grown by MOCVD
- Chinese Journal of Luminescence Vol. 36, Issue 4, Pages: 408-412(2015)
- 作者机构：
  
  集成光电子学国家重点联合实验室吉林大学电子科学与工程学院,吉林长春,130012
- 作者简介：
- 基金信息：
  
  Supported by "
- DOI：10.3788/fgxb20153604.0408
  CLC： O484.4
- Received：26 December 2014，
  
  Revised：10 February 2015，
  
  Published：03 April 2015
- 稿件说明：
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崔夕军, 庄仕伟, 张金香等. 温度对Si上MOCVD-ZnO成核与薄膜生长特性的影响[J]. 发光学报, 2015,36(4): 408-412

CUI Xi-jun, ZHUANG Shi-wei, ZHANG Jin-xiang etc. Effect of Temperature on The Nucleation and Epitaxial Films of ZnO on Si Substrates Grown by MOCVD[J]. Chinese Journal of Luminescence, 2015,36(4): 408-412
崔夕军, 庄仕伟, 张金香等. 温度对Si上MOCVD-ZnO成核与薄膜生长特性的影响[J]. 发光学报, 2015,36(4): 408-412 DOI： 10.3788/fgxb20153604.0408.

CUI Xi-jun, ZHUANG Shi-wei, ZHANG Jin-xiang etc. Effect of Temperature on The Nucleation and Epitaxial Films of ZnO on Si Substrates Grown by MOCVD[J]. Chinese Journal of Luminescence, 2015,36(4): 408-412 DOI： 10.3788/fgxb20153604.0408.

摘要

采用金属有机化学气相沉积(MOCVD)方法在Si衬底上进行了ZnO的成核与薄膜生长研究。ZnO薄膜的形貌和结晶特性由成核和后期生长过程共同决定

初期成核温度决定了其尺寸和密度

进而影响后期ZnO主层的生长行为

但由于高温对后期ZnO纳米柱横向生长的抑制

纳米柱的尺寸并没有因为成核尺寸的增大而变大

因此在560 ℃得到了晶柱尺寸最大、密度最小的ZnO薄膜。最后通过改变成核温度

优化了ZnO外延膜的结晶质量。

Abstract

The nucleation and epitaxial films of ZnO on Si substrates were investigated by metal-organic chemical vapor deposition (MOCVD). As is known to all

the morphology and crystalline quality of ZnO are determined by both the nucleation and epitaxy process. In this paper

the effect of temperature on the growth of ZnO films by MOCVD was investigated in terms of these two processes separately. It is found that the temperature has a great influence on the nucleation process and the following epitaxial growth. Because high temperature has suppression on the lateral growth of ZnO nanorods

the diameters of nanorods don't increase with the ZnO nucleus. As a result

the ZnO nanorods with the largest diameter and lowest density were obtained at 560 ℃. In addition

the crystalline quality of ZnO thin films was further improved by modifying nucleation temperature.

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references

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