Enhancement of Electroluminescence from TiO2/p+-Si Heterostructured-based Devices Through Boron-doping of TiO2 Films

SHA Yi-ping; ZHU Chen; ZHAO Ze-gang; LI Dong-sheng; MA Xiang-yang; YANG De-ren

doi:10.3788/fgxb20153604.0389

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Enhancement of Electroluminescence from TiO₂/p⁺-Si Heterostructured-based Devices Through Boron-doping of TiO₂ Films

更新时间：2020-08-12

- Enhancement of Electroluminescence from TiO₂/p⁺-Si Heterostructured-based Devices Through Boron-doping of TiO₂ Films
- Chinese Journal of Luminescence Vol. 36, Issue 4, Pages: 389-394(2015)
- 作者机构：
  
  浙江大学硅材料国家重点实验室,浙江杭州,310027
- 作者简介：
- 基金信息：
  
  Supported by "
- DOI：10.3788/fgxb20153604.0389
  CLC： TN304;O482.31
- Received：15 January 2015，
  
  Revised：11 February 2015，
  
  Published：03 April 2015
- 稿件说明：
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沙一平, 朱辰, 赵泽钢等. TiO2薄膜的硼掺杂对TiO2/p+-Si异质结器件电致发光的增强[J]. 发光学报, 2015,36(4): 389-394

SHA Yi-ping, ZHU Chen, ZHAO Ze-gang etc. Enhancement of Electroluminescence from TiO2/p+-Si Heterostructured-based Devices Through Boron-doping of TiO2 Films[J]. Chinese Journal of Luminescence, 2015,36(4): 389-394
沙一平, 朱辰, 赵泽钢等. TiO2薄膜的硼掺杂对TiO2/p+-Si异质结器件电致发光的增强[J]. 发光学报, 2015,36(4): 389-394 DOI： 10.3788/fgxb20153604.0389.

SHA Yi-ping, ZHU Chen, ZHAO Ze-gang etc. Enhancement of Electroluminescence from TiO2/p+-Si Heterostructured-based Devices Through Boron-doping of TiO2 Films[J]. Chinese Journal of Luminescence, 2015,36(4): 389-394 DOI： 10.3788/fgxb20153604.0389.

摘要

利用磁控溅射在重掺硼硅(p

-Si)衬底上分别沉积TiO

薄膜和掺硼的TiO

(TiO

:B)薄膜

并经过氧气氛下600 ℃热处理

由此形成相应的TiO

-Si和TiO

:B/p

-Si异质结。与TiO

-Si异质结器件相比

TiO

:B/p

-Si异质结器件的电致发光有明显的增强。分析认为:TiO

:B薄膜经过热处理后

B原子进入TiO

晶格的间隙位

引入了额外的氧空位

而氧空位是TiO

-Si异质结器件电致发光的发光中心

所以上述由B掺杂引起的氧空位浓度的增加是TiO

:B/p

-Si异质结器件电致发光增强的原因。

Abstract

TiO

-Si and TiO

:B/p

-Si heterostructures were formed by sputtering TiO

films and boron-doped TiO

(TiO

:B) films on heavily boron-doped silicon (p

-Si) substrates

respectively

followed by annealing at 600 ℃ in O

ambient. In contrast with the TiO

-Si heterostructured devices

the TiO

:B/p

-Si counterpart exhibits markedly enhanced electroluminescence (EL). It is derived that the doped B atoms in TiO

:B films enter into the interstitial sites of TiO

lattice after annealing at high temperature

which introduces excess oxygen vacancies. The increase of the concentration of oxygen vacancies due to B-doping leads to the enhancement of EL from the TiO

:B/p

-Si heterostructured devices because oxygen vacancies are the light-emitting centers of the TiO

-Si heterostructured devices.

关键词

Keywords

references

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