Effect of Eu2+ Concentration on The Thermal Quenching Mechanism of Sr2Si5N8:Eu2+ Red Phosphors

CHEN Lei; LIU Rong-hui; ZHUANG Wei-dong; LIU Yuan-hong; HU Yun-sheng; DU Fu

doi:10.3788/fgxb20153604.0371

您当前的位置：

首页 >

文章列表页 >

Effect of Eu²⁺ Concentration on The Thermal Quenching Mechanism of Sr₂Si₅N₈:Eu²⁺ Red Phosphors

更新时间：2020-08-12

- Effect of Eu²⁺ Concentration on The Thermal Quenching Mechanism of Sr₂Si₅N₈:Eu²⁺ Red Phosphors
- Chinese Journal of Luminescence Vol. 36, Issue 4, Pages: 371-376(2015)
- 作者机构：
  
  1. 北京有色金属研究总院稀土材料国家工程研究中心北京,100088
  2. 有研稀土新材料股份有限公司北京,100088
- 作者简介：
- 基金信息：
  
  Supported by "
- DOI：10.3788/fgxb20153604.0371
  CLC： O482.31
- Received：05 January 2015，
  
  Revised：09 February 2015，
  
  Published：03 April 2015
- 稿件说明：
移动端阅览
陈磊, 刘荣辉, 庄卫东等. Eu2+浓度对Sr2Si5N8:Eu2+红粉热猝灭机制的影响[J]. 发光学报, 2015,36(4): 371-376

CHEN Lei, LIU Rong-hui, ZHUANG Wei-dong etc. Effect of Eu2+ Concentration on The Thermal Quenching Mechanism of Sr2Si5N8:Eu2+ Red Phosphors[J]. Chinese Journal of Luminescence, 2015,36(4): 371-376
陈磊, 刘荣辉, 庄卫东等. Eu2+浓度对Sr2Si5N8:Eu2+红粉热猝灭机制的影响[J]. 发光学报, 2015,36(4): 371-376 DOI： 10.3788/fgxb20153604.0371.

CHEN Lei, LIU Rong-hui, ZHUANG Wei-dong etc. Effect of Eu2+ Concentration on The Thermal Quenching Mechanism of Sr2Si5N8:Eu2+ Red Phosphors[J]. Chinese Journal of Luminescence, 2015,36(4): 371-376 DOI： 10.3788/fgxb20153604.0371.

摘要

采用高温固相法制备了不同Eu

浓度掺杂的Sr

红色荧光粉

并对其晶体结构、形貌、发光和热猝灭性能进行了详细的研究。XRD和SEM测试表明

所合成的样品为纯相Sr

结构

具有较高的结晶度。PL光谱数据表明

替代Sr

格位形成两种不同的发光中心。温度特性测试发现

样品的热猝灭性能很大程度上取决于Eu

浓度。随着Eu

浓度的增加

样品的热猝灭性能先增强后降低。不同发光中心的荧光强度比和荧光寿命测试结果表明:在较低Eu

掺杂条件下

浓度引起热猝灭性能改变的机制主要归因于Eu

占据不同Sr

格位的几率的改变。

Abstract

doped Sr

red phosphors with different Eu

concentration were synthesized by high-temperature solid state method. The crystal structure

morphology

luminescence and thermal quenching properties were investigated in detail. X-ray diffraction (XRD) patterns show that a pure phase of Sr

phosphor with high crystallinity has been obtained. Photoluminescence (PL) spectra results indicate that there are two different luminescence centers when Eu

ions substitute Sr

sites. Thermal stability data show that the thermal quenching property is largely dependent on Eu

concentration. The changes of relative intensity ratio and fluorescence lifetime were examined for the two-peak emission in Sr

:Eu

. The results reveal that Eu

distribution changes with varying Eu

concentration

which should be the mainly mechanism of the thermal quenching behavior for Eu

doped Sr

phosphors at low dopant levels.

关键词

Keywords

references

Zhang J H, Lyu W, Hao Z D, et al. Color-tunable white-light emitting BaMg2Al6Si9O30:Eu2+,Tb3+,Mn2+ phosphors via energy transfer [J]. Chin. Opt.(中国光学), 2012, 5(3):203-208 (in Chinese).

Pimputkar S, Speck J S, Den Baars S P, et al. Prospects for LED lighting [J]. Nat. Photon., 2009, 3(4):179-181.

Sun L, Zhang Y, Hu X K, et al. Synthesis and photoluminescence properties of KZn4(BO3)3:Eu3+ red-emitting phosphor [J]. Chin. J. Liq. Cryst. Disp.(液晶与显示), 2014, 29(6):893-900 (in Chinese).

Piao X, Machida K, Horikawa T, et al. Acetate reduction synthesis of Sr2Si5N8:Eu2+ phosphor and its luminescence properties [J]. J. Lumin., 2010, 130(1):8-12.

Li Y Q, De With G, Hintzen H T. The effect of replacement of Sr by Ca on the structural and luminescence properties of the red-emitting Sr2Si5N8:Eu2+ LED conversion phosphor [J]. J. Solid State Chem., 2008, 181(3):515-524.

Uheda K, Hirosaki N, Yamamoto Y, et al. Luminescence properties of a red phosphor, CaAlSiN3:Eu2+, for white light-emitting diodes [J]. Electron. Solid State Lett., 2006, 9(4):H22-H25.

Xie R J, Hirosaki N, Mitomo M. Oxynitride/nitride phosphors for white light-emitting diodes (LEDs) [J]. J. Electroceram., 2008, 21(1-4):370-373.

Xie R J, Hintzen H T. Optical properties of (oxy) nitride materials: A review [J]. J. Am. Ceram. Soc., 2013, 96(3):665-687.

Tian Y C. Development of phosphors with high thermal stability and efficiency for phosphor-converted LEDs [J]. J. Solid State Lighting, 2014, 1:11-25.

Bachmann V, Rondam C, Meijerink A. Temperature quenching of yellow Ce3+ luminescence in YAG:Ce [J]. Chem. Mater., 2009, 21(10):2077-2084.

Hu Y S, Zhuang W D, He H Q, et al. High temperature stability of Eu2+ -activated nitride red phosphors [J]. J. Rare Earths (稀土学报), 2014, 32(1):12-16 (in Chinese).

Piao X, Horikawa T, Hanzawa H, et al. Characterization and luminescence properties of Sr2Si5N8:Eu2+ phosphor for white light-emitting-diode illumination [J]. Appl. Phys. Lett., 2006, 88:161908-1-3.

Sohn K S, Lee S, Xie R J, et al. Rate-equation model for energy transfer between activators at different crystallographic sites in Sr2Si5N8:Eu2+ [J]. Opt. Lett., 2009, 34(21):3427-3429.

Ma X L, Zhuang W D, Guo H J, et al. Influence of Ca for Sr substitution on luminescence properties of Sr3Al0.6Si0.4O4.4-F0.6:Ce3+ phosphors [J]. Chin. J. Lumin.(发光学报), 2014, 35(5):519-525 (in Chinese).

Wang C, Zhao Z Y, Wu Q S, et al. The pure-phase Ba3-xCaxSi6O12N2:Eu2+ green phosphor: Synthesis, photoluminescence and thermal properties [J]. Cryst. Eng. Comm., 2014, 16:9651-9656.

Piao X, Horikawa T, Hanzawa H, et al. Preparation of (Sr1-xCax)2Si5N8/Eu2+ solid solutions and their luminescence properties [J]. J. Electrochem. Soc., 2006, 153(12):H232-H235.

Piao X, Machida K, Horikawa T, et al. Self-propagating high temperature synthesis of yellow-emitting Ba2Si5N8:Eu2+ phosphors for white light-emitting diodes [J]. Appl. Phys. Lett., 2007, 91(4):041908-1-3.

Views

115

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Preparation and Photoluminescence Properties of CaLuBO₄: Tb³⁺ Phosphor

Preparation and Luminescence Properties of Lu₂O₃: Pr³⁺ Phosphors Codoped with Li⁺, Na⁺, K⁺, Ca²⁺, Ba²⁺ Ions

Research Progress in Artificial Micro-nano Structures Enhanced Photoluminescence

Luminescence Properties and Application of Ce³⁺ Doped Ba₃Y₂(BO₃)₄ Phosphor

Methods for Evaluating Hydrolytic Degradation of Mn⁴⁺-activated Fluoride Phosphors

Related Author

SUN Xiao-yuan

FAN Xiao-xuan

HE Jun-jie

LYU Qi-song

JIANG Guang-yuan

DENG Yun

LUO Yong-shi

WU Chun-lei

Related Institution

Department of Physics, Changchun Normal University, Changchun 130032, China

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

Faculty of Science, Mudanjiang Normal University

Institute of Physics and Electronic Engineering, Xinjiang Normal University, Urumqi 830054, China

Key Laboratory of Mineral and Microstructure of Xinjiang, Xinjiang Normal University, Urumqi 830054, China

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰