Two-photon Absorption Attenuated THz Generation in GaSe

JIANG Ke; XIE Ji-jiang; YANG Gui-long; XIE Jing-jiang; LI Dian-jun; CHEN Fei

doi:10.3788/fgxb20153603.0361

您当前的位置：

首页 >

文章列表页 >

Two-photon Absorption Attenuated THz Generation in GaSe

更新时间：2020-08-12

- Two-photon Absorption Attenuated THz Generation in GaSe
- Chinese Journal of Luminescence Vol. 36, Issue 3, Pages: 361-365(2015)
- 作者机构：
  
  1. 中国科学院大学北京,100049
  2. 中国科学院长春光学精密机械与物理研究所激光与物质相互作用国家重点实验室,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153603.0361
  CLC： O437;TN248
- Received：23 October 2014，
  
  Revised：17 November 2014，
  
  Published Online：26 December 2014，
  
  Published：03 March 2015
- 稿件说明：
移动端阅览
姜可, 谢冀江, 杨贵龙等. GaSe晶体的双光子吸收对太赫兹输出的影响[J]. 发光学报, 2015,36(3): 361-365

JIANG Ke, XIE Ji-jiang, YANG Gui-long etc. Two-photon Absorption Attenuated THz Generation in GaSe[J]. Chinese Journal of Luminescence, 2015,36(3): 361-365
姜可, 谢冀江, 杨贵龙等. GaSe晶体的双光子吸收对太赫兹输出的影响[J]. 发光学报, 2015,36(3): 361-365 DOI： 10.3788/fgxb20153603.0361.

JIANG Ke, XIE Ji-jiang, YANG Gui-long etc. Two-photon Absorption Attenuated THz Generation in GaSe[J]. Chinese Journal of Luminescence, 2015,36(3): 361-365 DOI： 10.3788/fgxb20153603.0361.

摘要

根据光整流效应

利用超快激光脉冲泵浦GaSe晶体实现了0.2~2.5 THz的宽带太赫兹辐射输出。禁带中的电子在两个800 nm光子的作用下激发到导带中形成自由载流子

进而吸收所产生的太赫兹辐射

最终导致太赫兹的输出随泵浦功率的增加而趋于饱和。为了研究双光子吸收对太赫兹输出的影响

测量了800 nm处的GaSe晶体的双光子吸收系数

结果为 0.165 cm/GW。通过对太赫兹输出实验数据的拟合

得到GaSe晶体中自由载流子对太赫兹输出的吸收截面为110

-15

。本文的研究结果可用于优化GaSe晶体在强激光泵浦下的太赫兹转换效率。

Abstract

The broadband THz generation from 0.2 to 2.5 THz was measured as a function of pump intensity in a single pure gallium selenide crystal based on the optical rectification of ultrafast laser pulses. Two-photon absorption at 800 nm can generate free charge carriers which can absorb the generated THz radiation

and finally attenuate THz output. The result indicates that the pump intensity dependence of ouput THz radiation changes from square to sub-linear relationship and the saturation of output THz radiation appears at high pump intensity. To study the impact of two photon absorption on THz generation

the two photon absorption coefficient of GaSe at 800 nm is measured to be 0.165 cm/GW

which is determined by the measured nonlinear transmission. The THz output fitting result taking account of the free charge carrier absorption cross section of 110

-15

is consistent with the experiment data very well. This estimation result can be used to optimize the conversion efficient of THz generation in GaSe crystal under intense laser pump.

关键词

Keywords

references

Jepsen P U, Cooke D G, Koch M. Terahertz spectroscopy and imaging-modern techniques and applications [J]. Laser Photon. Rev., 2011, 5(1):124-166.

Ferguson B, Zhang X C. Materials for terahertz science and technology [J]. Nat. Mater., 2002, 1(9):26-33.

Ding Y J, Shi W. Widely tunable monochromatic THz sources based on phase-matched difference frequency generation in nonlinear-optical crystals: A novel approach [J]. Laser Phys., 2006, 16(4):562-570.

Kaindl R A, Eickemeyer F, Woerner M, et al. Broadband phase-matched difference frequency mixing of femtosecond pulses in GaSe: Experiment and theory [J]. Appl. Phys. Lett., 1999, 75(8):1060-1062.

Shi W, Ding Y J. A monochromatic and high-power terahertz source tunable in the ranges of 2.7-38.4 and 58.2-3 540 m for variety of potential applications [J]. Appl. Phys. Lett., 2004, 84(10):1635-1637.

Huber R, Brodschelm A, Tauser F, et al. Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz [J]. Appl. Phys. Lett., 2000, 76(21):3191-3193.

Kbler C, Huber R, Leitenstorfer A. Ultrabroadband terahertz pulses: Generation and field-resolved detection [J]. Semicond. Sci. Technol., 2005, 20(7):S128-S133.

Bao X G, Sun G, Ding Y J, et al. Investigation of symmetries of second-order nonlinear susceptibility tensor of GaSe crystals in THz domain [J]. Opt. Commun., 2011, 284(7):2027-2030.

Vidal S, Degert J, Tondusson M, et al. Impact of dispersion, free carriers, and two-photon absorption on the generation of intense terahertz pulses in ZnTe crystals [J]. Appl. Phys. Lett., 2011, 98(19):191103-1-3.

Hoffmann M C, Yeh K L, Hebling J, et al. Efficient terahertz generation by optical rectification at 1 035 nm [J]. Opt. Express, 2007, 15(18):11706-11713.

Chen C W, Lin Y S, Huang J Y, et al. Generation and spectral manipulation of coherent terahertz radiation with two-stage optical rectification [J]. Opt. Express, 2008, 16(18):14294-14303.

Vodopyanov K L, Mirov S B, Voevodin V G, et al. Two-photon absorption in GaSe and CdGeAs2 [J]. Opt. Commun., 1998, 155:47-50.

Zotova I B, Ding Y J. Spectral measurements of two-photon absorption coefficients for CdSe and GaSe crystals [J]. Appl. Opt., 2001, 40(36):6654-6658.

Kulibekov A M, Allakhverdiev K, Guseinova D A, et al. Optical absorption in GaSe under high-density ultrashort laser pulses [J]. Opt. Commun., 2004, 239(1-3):193-198.

Allakhverdiev K, Baykara R T, Joosten S, et al. Anisotropy of two-photon absorption in gallium selenide at 1 064 nm [J]. Opt. Commun., 2006, 261(1):60-64.

Allakhverdiev K R. Two-photon absorption in layered TlGaSe2, TlInS2, TlGaS2 and GaSe crystals [J]. Solid State Commun., 1999, 111(5):253-257.

Marchev G, Tyazhev A, Panyutin V, et al. Some properties of the mixed GaS0.4Se0.6 nonlinear crystal in comparison to GaSe [J]. SPIE, 2011, 7917:79171G-1-11.

Tomasino A, Parisi A, Stivala S, et al. Wideband THz time domain spectroscopy based on optical rectification and electro-optic sampling [J]. Sci. Rep., 2013, 3:3116-3120.

Jiang K, Xie J J, Li D J, et al. CO2 SHG experiment and dispersion characteristics of GaSe crystal [J]. J. Optoelectron. laser(光电子激光), 2013, 24(5):903-907 (in Chinese).

Adachi S, Shindo Y. Optical constants of -GaSe [J].J. Appl. Phyys., 1992, 71(1):428-431.

Views

859

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰