Near-infrared Luminescence in Doped Bi4Ge3O12 Crystals

YU Ping-sheng; SU Liang-bi; XU Jun

doi:10.3788/fgxb20153603.0283

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Near-infrared Luminescence in Doped Bi₄Ge₃O₁₂Crystals

更新时间：2020-08-12

- Near-infrared Luminescence in Doped Bi₄Ge₃O₁₂Crystals
- Chinese Journal of Luminescence Vol. 36, Issue 3, Pages: 283-287(2015)
- 作者机构：
  
  1. 盐城工学院材料工程学院,江苏盐城,224051
  2. 中国科学院上海硅酸盐研究所透明与光功能无机材料重点实验室上海,201800
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153603.0283
  CLC： O482.31
- Received：27 November 2014，
  
  Revised：06 January 2015，
  
  Published Online：31 December 2014，
  
  Published：03 March 2015
- 稿件说明：
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俞平胜, 苏良碧, 徐军. 掺杂的Bi4Ge3O12晶体的近红外发光性能[J]. 发光学报, 2015,36(3): 283-287

YU Ping-sheng, SU Liang-bi, XU Jun. Near-infrared Luminescence in Doped Bi4Ge3O12 Crystals[J]. Chinese Journal of Luminescence, 2015,36(3): 283-287
俞平胜, 苏良碧, 徐军. 掺杂的Bi4Ge3O12晶体的近红外发光性能[J]. 发光学报, 2015,36(3): 283-287 DOI： 10.3788/fgxb20153603.0283.

YU Ping-sheng, SU Liang-bi, XU Jun. Near-infrared Luminescence in Doped Bi4Ge3O12 Crystals[J]. Chinese Journal of Luminescence, 2015,36(3): 283-287 DOI： 10.3788/fgxb20153603.0283.

摘要

生长了Mg、Ca离子掺杂(提拉法)和Cl离子掺杂(坩埚下降法)的Bi

(BGO)晶体

测试了晶体样品的吸收谱、光致发光谱和发光衰减时间等。这些掺杂的BGO晶体的可见光发光比纯BGO有所减弱

但在808 nm和980 nm激光二极管(LD)激发下出现了纯BGO几乎没有的近红外发光

归因于改变了能级的Bi离子或可能出现的低价态Bi离子。掺杂对近红外发光的影响跟掺杂离子价态有关

同价态的掺杂离子对近红外发光的影响相差不大。

Abstract

Mg and Ca doped Bi

(BGO) crystals were grown by using Czochralski (Cz) technique

and Cl doped BGO crystal was prepared by Vertical Bridgman (VB) method. The absorption

photoluminescence (PL) and PL lifetime spectra were systematically investigated. The results reveal that the emission intensity of these doped BGO is weaker than that of pure BGO in visible region. Near infrared (NIR) emission is observed in doped BGO under 808 nm and/or 980 nm laser diodes (LDs) excitation

and the NIR emission should be ascribed to a changed Bi-related active center or lower valence Bi ions. The valence state of doped ions could be key to achieving the NIR emission in BGO crystals

and the doped ions with same valence could play the similar roles in our experiments.

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Keywords

references

Ji Z M, Ni H H, Yuan L Y, et al. Investigation of optical transmittance and light response uniformity of 600-mm-long BGO crystals [J]. Nucl. Instrum. Meth. A, 2014, 753:143-148.

Sasano M, Nishioka H, Okuyama S, et al. Geometry dependence of the light collection efficiency of BGO crystal scintillators read out by avalanche photo diodes [J]. Nucl. Instrum. Meth. A, 2013, 715:105-111.

Nitsche R. Crystal growth and electro-optic effect of bismuth germanate, Bi4(GeO4)3 [J]. J. Appl. Phys., 1965, 36 (8):2358-2360.

Weber M J, Monchamp R R. Luminescence of Bi4Ge3O12: Spectral and decay properties [J]. J. Appl. Phys., 1973, 44 (12):5495-5499.

Nestor O H, Huang C Y. Bismuth germinate: A high-Z gamma-ray and charged particle detector [J]. IEEE Trans. Nucl. Sci., 1975, NS-2:68-72.

Marinova V, Petrova D, Lin S H, et al. Optical and holographic properties of Fe+Mn co-doped Bi4Ge3O12 crystals [J]. Opt. Commun., 2008, 281(1):37-43.

Shim J B, Yoshikawa A, Bensalah A, et al. Luminescence, radiation damage, and color center creation in Eu3+-doped Bi4Ge3O12 fiber single crystals [J]. J. Appl. Phys., 2003, 93(9):5131-5135.

Jin Y, Wang Q P. Crystal structure and photoluminescence properties of MPO4:Eu3+,Bi3+/Tb3+ (M=La, Gd, Y) phosphors [J]. Chin. J. Lumin.(发光学报), 2014, 35(1):61-65 (in Chinese).

Bao J X, Zhou S F, Feng G F, et al. Influence of melting temperature on the luminescence properties of bismuth-doped barium aluminosilicate glasses [J]. Chin. J. Lumin.(发光学报), 2007, 28(5):699-704 (in Chinese).

Zhou P, Su L B, Li H J, et al. Preparation and near infrared luminescence properties of Bi doped BaF2 crystal [J]. Acta Phys. Sinica (物理学报), 2010, 59(4):2827-2830 (in Chinese).

Peng M, Wondraczek L. Bi2+-doped strontium borates for white light emitting diodes [J]. Opt. Lett., 2009, 34(19):2885-2887.

Guo X, Li H J, Su L B, et al. Study on multiple near-infrared luminescent centers and effects of aluminum ions in Bi2O3-GeO2 glass system [J]. Opt. Mater., 2012, 34(4):675-678.

Peng M Y, Wang C, Chen D P, et al. Investigations on bismuth and aluminum co-doped germanium oxide glasses for ultra-broadband optical amplification [J]. J. Non-Cryst. Solids, 2005, 351(30-32):2388-2393.

Tang Y G, He M, Cui J C, et al. Senamont based measuring method for birefringence of infrared crystal [J]. Opt. Precision Eng.(光学精密工程), 2012, 20(10):2176-2183 (in Chinese).

Wang S T, Zhang W, Wang Q. Measurement for detectivity of infrared detectors in low temperature background [J]. Opt. Precision Eng.(光学精密工程), 2012, 20(3):484-491 (in Chinese).

Guo X, Li H J, Su L B, et al. Near-infrared broadband luminescence in Bi2O3-GeO2 binary glass system [J]. Laser Phys., 2011, 21:901-905.

Jackson R A, Valerio M E G. Computer modelling of radiation generated defects in BGO scintillators [J].Nucl. Instrum. Meth. B, 2004, 218:145-147.

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