Luminescence Property of GaN Nanorod

YANG Hua; XIE Zi-li; DAI Jiang-ping; XIU Xiang-qian; ZHAO Hong; CHEN Peng; ZHANG Rong; SHI

doi:10.3788/fgxb20153603.0279

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Luminescence Property of GaN Nanorod

更新时间：2020-08-12

- Luminescence Property of GaN Nanorod
- Chinese Journal of Luminescence Vol. 36, Issue 3, Pages: 279-282(2015)
- 作者机构：
  
  1. 南京大学江苏省光电功能材料重点实验室,江苏南京,210093
  2. 南京大学电子科学与工程学院,江苏南京,210093
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153603.0279
  CLC： O472+.3;O482.31
- Received：17 November 2014，
  
  Revised：06 January 2015，
  
  Published Online：12 January 2015，
  
  Published：03 March 2015
- 稿件说明：
移动端阅览
杨华, 谢自力, 戴姜平等. GaN纳米柱发光特性[J]. 发光学报, 2015,36(3): 279-282

YANG Hua, XIE Zi-li, DAI Jiang-ping etc. Luminescence Property of GaN Nanorod[J]. Chinese Journal of Luminescence, 2015,36(3): 279-282
杨华, 谢自力, 戴姜平等. GaN纳米柱发光特性[J]. 发光学报, 2015,36(3): 279-282 DOI： 10.3788/fgxb20153603.0279.

YANG Hua, XIE Zi-li, DAI Jiang-ping etc. Luminescence Property of GaN Nanorod[J]. Chinese Journal of Luminescence, 2015,36(3): 279-282 DOI： 10.3788/fgxb20153603.0279.

摘要

用自组装的Ni纳米岛做掩模通过ICP刻蚀得到GaN纳米柱

采用扫描电子显微镜(SEM)观测其形貌

室温下光致发光(PL)谱测量研究样品发光特性。结果表明

室温下GaN 纳米柱的发光强度是体材料的2.6倍。为了修复刻蚀损伤

用KOH对样品进行湿法处理

发现经KOH处理的纳米柱与处理前相比变得更直

且其发光较处理之前进一步增强。为了研究其原因

分别对KOH处理前后的样品进行变温PL谱的测量

发现湿法处理后发光增强是由于内量子效率的提高引起的。

Abstract

GaN nanorods were fabricated by ICP using Ni self-assembled nanodots as etching mask.The morphology was checked by scanning electron microscopy (SEM)

and the optical property was characterized by the photoluminescence (PL) spectra at room temperature. The PL intensity of GaN nanorods was enhanced about 2.6 times compared to that of as-grown GaN films. Then

GaN nanorods were dipped into the KOH solution for 40 min in order to heal the etch damage. After the treatment

the PL intensity was enhanced again. The temperature-dependent PL was measured to estimate IQE. The results show that the enhancement of PL intensity is due to the higher IQE after the KOH treatment.

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Keywords

references

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