Total Dose Effects in 0.5 &mu;m CMOS Active Pixel Image Sensor

WANG Bo; LI Yu-dong; GUO Qi; LIU Chang-ju; WEN Lin; SUN Jing; MA Li-ya

doi:10.3788/fgxb20153602.0242

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Total Dose Effects in 0.5 μm CMOS Active Pixel Image Sensor

更新时间：2020-08-12

- Total Dose Effects in 0.5 μm CMOS Active Pixel Image Sensor
- Chinese Journal of Luminescence Vol. 36, Issue 2, Pages: 242-248(2015)
- 作者机构：
  
  1. 中国科学院大学北京,100049
  2. 重庆光电技术研究所重庆,400060
  3. 中国科学院特殊环境功能材料与器件重点试验室, 新疆电子信息材料与器件重点试验室, 中国科学院新疆理化技术研究所,新疆乌鲁木齐,830011
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153602.0242
  CLC： TP212.14;TN386.5
- Received：11 November 2014，
  
  Revised：24 December 2014，
  
  Published：03 February 2015
- 稿件说明：
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汪波, 李豫东, 郭旗等. 0.5 μm工艺CMOS有源像素传感器的总剂量辐射效应[J]. 发光学报, 2015,36(2): 242-248

WANG Bo, LI Yu-dong, GUO Qi etc. Total Dose Effects in 0.5 μm CMOS Active Pixel Image Sensor[J]. Chinese Journal of Luminescence, 2015,36(2): 242-248
汪波, 李豫东, 郭旗等. 0.5 μm工艺CMOS有源像素传感器的总剂量辐射效应[J]. 发光学报, 2015,36(2): 242-248 DOI： 10.3788/fgxb20153602.0242.

WANG Bo, LI Yu-dong, GUO Qi etc. Total Dose Effects in 0.5 μm CMOS Active Pixel Image Sensor[J]. Chinese Journal of Luminescence, 2015,36(2): 242-248 DOI： 10.3788/fgxb20153602.0242.

摘要

采用

Co-射线对某国产0.5 m CMOS N阱工艺CMOS有源像素传感器(APS)的整体电路和像素单元结构进行了电离总剂量辐射效应研究

重点考察了器件的饱和输出信号、像素单元输出信号、暗信号等参数的变化规律.随着辐射剂量的增大

饱和输出信号逐渐减小且与像素单元饱和输出信号变化基本一致;暗信号随总剂量的增大而显著增大.研究结果表明

0.5 m工艺CMOS APS电离总剂量辐射效应引起参数退化的主要原因是光敏二极管周围的整个LOCOS(Local oxidation of silicon)隔离氧化层产生了大量的辐射感生电荷.

Abstract

In order to evaluate the effects of space radiation on the imaging function of a CMOS active pixel sensors (APS) manufactured in a 0.5 m CMOS N-well technology

Co- radiation experiment was conducted for the overall circuit and pixel unit of the device

and the effects of the total dose on the main parameters of the device were analyzed. When the total dose of irradiation reached a certain value and during annealing

the dark signal

saturated output signal and pixel unit output signal were measured quantitatively off line. The mean dark signals dramatically increase with the total dose. The saturation output signal decreases with the total dose

being consistent with the output signal of the pixel unit saturation. It is found that the degradation of the device parameters is caused mainly by the radiation induced charge in LOCOS(Local oxidation of silicon) isolation oxide layer.

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references

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Total Dose Effects in 0.5 μm CMOS Active Pixel Image Sensor

DOI：10.3788/fgxb20153602.0242

摘要

Abstract

关键词

Keywords

references