LI Guang-min, LIU Wei, LIN Shu-ping etc. Influence of Sputtering Pressure on The Structure and Device Properties of CIGS Thin Films[J]. Chinese Journal of Luminescence, 2015,36(2): 192-199
LI Guang-min, LIU Wei, LIN Shu-ping etc. Influence of Sputtering Pressure on The Structure and Device Properties of CIGS Thin Films[J]. Chinese Journal of Luminescence, 2015,36(2): 192-199 DOI: 10.3788/fgxb20153602.0192.
Influence of Sputtering Pressure on The Structure and Device Properties of CIGS Thin Films
The influence of sputtering pressure on the structure and device performances of Cu(In
1-
x
Ga
x
)Se
2
(CIGS) thin films is investigated. The crystalline and roughness of precursors can be moderated by choosing appropriate sputtering pressure
which may facilitate Ga incorporation into the lattice during the selenization process. With the sputtering pressure increases
the precursors tend to be amorphous state and become denser. As a result
the selenized films may display "phase separation" of CIS and CGS which results in decrease of
V
oc
and
FF
and the cell efficiency drops from 10.03% to 5.02%.
关键词
Keywords
references
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