Structural Design and Optimization of Novel Composite Cap Extended Wavelength InGaAs Infrared Detector

ZHAO Xu; MIAO Guo-qing; ZHANG Zhi-wei; ZENG Yu-gang

doi:10.3788/fgxb20153601.0075

您当前的位置：

首页 >

文章列表页 >

Structural Design and Optimization of Novel Composite Cap Extended Wavelength InGaAs Infrared Detector

更新时间：2020-08-12

- Structural Design and Optimization of Novel Composite Cap Extended Wavelength InGaAs Infrared Detector
- Chinese Journal of Luminescence Vol. 36, Issue 1, Pages: 75-79(2015)
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院大学北京,100049
- 作者简介：
- 基金信息：
  
  "973"
- DOI：10.3788/fgxb20153601.0075
  CLC： O472.3
- Received：12 August 2014，
  
  Revised：11 September 2014，
  
  Published：03 January 2015
- 稿件说明：
移动端阅览
赵旭, 缪国庆, 张志伟等. 新型复合盖层延伸波长InGaAs红外探测器结构优化设计[J]. 发光学报, 2015,36(1): 75-79

ZHAO Xu, MIAO Guo-qing, ZHANG Zhi-wei etc. Structural Design and Optimization of Novel Composite Cap Extended Wavelength InGaAs Infrared Detector[J]. Chinese Journal of Luminescence, 2015,36(1): 75-79
赵旭, 缪国庆, 张志伟等. 新型复合盖层延伸波长InGaAs红外探测器结构优化设计[J]. 发光学报, 2015,36(1): 75-79 DOI： 10.3788/fgxb20153601.0075.

ZHAO Xu, MIAO Guo-qing, ZHANG Zhi-wei etc. Structural Design and Optimization of Novel Composite Cap Extended Wavelength InGaAs Infrared Detector[J]. Chinese Journal of Luminescence, 2015,36(1): 75-79 DOI： 10.3788/fgxb20153601.0075.

摘要

设计并模拟计算了延伸波长至2.6 m的复合盖层材料PIN结构In

0.82

0.18

As红外探测器

即PNN型盖层、PIN结构的In

0.82

0.18

As红外探测器。研究了不同厚度及载流子浓度的PNN盖层对探测器性能的影响。研究结果表明:在In

0.82

0.18

As厚度为200 nm且载流子浓度为2E18、InAs

0.6

0.4

厚度为50 nm且载流子浓度为2E17、In

0.82

0.18

As厚度为50 nm且载流子浓度为2E16时

探测器表现出最佳的性能。与传统PIN结构探测器相比

其相对光谱响应度仅降低10%

暗电流降低了1个数量级。计算分析了不同工作温度下的暗电流

结果显示:在120~250 K时

暗电流主要为缺陷隧穿电流;在250~300 K时

暗电流主要为带间隧穿电流;当温度大于300 K时

暗电流主要为产生-复合电流和扩散电流。

Abstract

The near-infrared detector of In

0.82

0.18

As with PIN structure was designed and simulated by APSYS. The long-wave cutoff wavelength was extended to 2.6 m. Three doped layers were deposited on the absorption layer

which contained P type N type

N type and by growth order. The thickness and concentration of each doped layer in cap layer were analyzed. The results show that In

0.82

0.18

InAs

0.6

0.4

and In

0.82

0.18

As layers by growth order are determined to obtain the excellent performance. The relative spectral responsivity of the detector keeps almost the same

and dark current decreases by one magnitude compared with the PIN structure. The defect tunneling current predominates when the detector works at 120-250 K

the inter-band tunneling current dominates the dark current when the detector works at 250-300 K

and the G-R current and diffusion current dominates the dark current when the detector works above 300 K.

关键词

Keywords

references

Hoogeveen R W M, Vander R W A, Goede A P. Extended wavelength InGaAs infrared (1.0-2.4 m) detector arrays on SCIAMACHY for space-based spectrometry of the earth atmosphere [J]. Infrared Phys. Technol., 2001, 42(1):1-16.

Wada M, Hosomatsu H. Wide wavelength and low dark current lattice-mismatched InGaAs/InAsP photodiodes grown by metalorganic vapor-phase epitaxy [J]. Appl. Phys. Lett., 1993, 64(10):1265-1267.

Li P. InGaAs/InP photoelectric detector [J]. Infrared (红外), 2004, 10:10-14 (in Chinese).

Webb P P. Properties of avalanche photodiodes [J]. RCA Rev., 1974, 35(4):34-78.

Chen W. PIN avalanche photodiodes model for circuit simulation [J]. IEEE J. Quant. Electron., 1996, 32(12):2105-2111.

Ma F. Monte Carlo simulation of low noise avalanche photo diode with hetero junction [J]. Appl. Phys. Lett., 2002, 92(6):4791-4795.

Karam N H. Triple-junction solar cell efficiencies above 32%: The promise and challenges of their application in high-conceniration-ratio PV systems [J]. IEEE Trans, 2000:955-960.

Christol P, EI Gazouli M, Bigenwald P, et al. Performance simulation of 3.3 m interband laser diodes grown on InAs substrate [J]. IEEE J., 2002, 14(4):375-384.

Jeon S R, Cho M S, Yu M A. GaN-based light-emitting diodes using tunnel junctions [J]. IEEE J. Select. Top. Quant. Electron., 2002, 8(2):739-743.

Liu X, Song H, Miao G Q, et al. Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method [J]. J. Alloys Compd., 2011, 509(24):6751-6755.

Liu X, Song H, Miao G Q, et al. Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD [J]. Solid State Commun., 2011, 151(12):904-907.

Miao G Q, Zhang T M, Zhang Z W, et al. Extended spectral response in In0.82Ga0.18As/InP photodetector using InP as a window layer grown by MOCVD [J]. Cryst. Eng. Comm., 2013, 15:8461-8462.

Caniou J. Passive Infrared Detection: Theory and Application [M]. Boston:Kluwer Academic Publishers, 1999:78-81.

Piotrowski J. Film-type infrared photoconductors [J]. Proceedings of IRE, 1959, 47:1471-1475.

Forrest S R. Voltage tunable integrated infrared imager [J]. IEEE Quant. Electron., 1981, 17(2):217-221.

Caniou J. Passive Infrared Detection: Theory and Application [M]. Boston:Kluwer Academic Publishers, 1999:620.

Forrest S R, Leheny R F, Nahory R F, et al. In0.53Ga0.47As photodiodes with dark current limited by generation-recombination and tunneling [J]. Appl. Phys. Lett., 1980, 37(3):322-325.

Forrest S R, DiDomenico M, Smith R G, et al. Evidence for tunneling in reverse-biased Ⅲ-Ⅴ photodetector diodes [J]. Appl. Phys. Lett., 1980, 36(7):580-582.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

All-inorganic p-i-n Photodetector Based on Lead-free CuSCN/Cs₃Bi₂I₆Br₃Nanofilm

Leakage Current Mechanism of GaSb/InSb/InP Heterostructure

Spectral Response and Dark Current of p-i-n Type and Schottky Barrier GaN-based Ultraviolet Detectors

Temperature Effects on Performance Parameters in 4T CMOS Image Sensor

Analysis of Total Dose Radiation Test for Linear CCD KLI-2113

Related Author

LI Yue-bin

XIE Guo-ao

WANG Ya-qi

LI Gen

ZENG Min

HUANG Hao

DENG He-ming

HU Yong-ming

Related Institution

Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices， College of Physics and Electronic Science， Hubei University

Ministry⁃of⁃Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules， Hubei University

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University

Department of Physics, China Agriculture University

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰