1 310 nm Polarization-insensitive High Power Superluminescent Diodes Fabricated by Liquid Phase Epitaxy

ZHOU Yong; DUAN Li-hua; ZHANG Jing; LIU Shang-jun; HAN Wei-feng; HUANG Mao

doi:10.3788/fgxb20153601.0069

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1 310 nm Polarization-insensitive High Power Superluminescent Diodes Fabricated by Liquid Phase Epitaxy

更新时间：2020-08-12

- 1 310 nm Polarization-insensitive High Power Superluminescent Diodes Fabricated by Liquid Phase Epitaxy
- Chinese Journal of Luminescence Vol. 36, Issue 1, Pages: 69-74(2015)
- 作者机构：
  
  1. 重庆大学应用物理系重庆,400044
  2. 重庆光电技术研究所重庆,400060
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153601.0069
  CLC： TN248.4
- Received：22 September 2014，
  
  Revised：05 November 2014，
  
  Published：03 January 2015
- 稿件说明：
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周勇, 段利华, 张靖等. 低偏振高功率1 310 nm超辐射发光二极管的液相外延生长[J]. 发光学报, 2015,36(1): 69-74

ZHOU Yong, DUAN Li-hua, ZHANG Jing etc. 1 310 nm Polarization-insensitive High Power Superluminescent Diodes Fabricated by Liquid Phase Epitaxy[J]. Chinese Journal of Luminescence, 2015,36(1): 69-74
周勇, 段利华, 张靖等. 低偏振高功率1 310 nm超辐射发光二极管的液相外延生长[J]. 发光学报, 2015,36(1): 69-74 DOI： 10.3788/fgxb20153601.0069.

ZHOU Yong, DUAN Li-hua, ZHANG Jing etc. 1 310 nm Polarization-insensitive High Power Superluminescent Diodes Fabricated by Liquid Phase Epitaxy[J]. Chinese Journal of Luminescence, 2015,36(1): 69-74 DOI： 10.3788/fgxb20153601.0069.

摘要

对新月形超辐射发光二极管的液相外延生长过程进行了机理分析。利用Matlab软件对建立的非平面生长模型进行了理论计算

并利用扫描电镜(SEM)对液相外延生长的形貌进行了分析

通过理论计算与实验分析设计了获得低偏振、高功率超辐射发光二极管的外延结构。利用该结构研制的超辐射发光二极管芯片在100 mA工作电流、25 ℃工作温度下输出功率达到3.6 mW

相应的输出波长为1 306 nm

光谱半宽为39 nm

光谱波纹为0.17 dB

偏振度为2%。

Abstract

Theoretical analyses of growing processes were made in the case of superluminesecnt diode with crescent structure by liquid phase epitaxy (LPE)

which could perfectly explain some phenomena in experiments of LPE on curved InP surfaces. The results of numerical calculation were consistent with the experimental results. The epitaxy structure was optimized to enhance the output power and reduce the polarization of the SLD. As a result

polarization dependence as low as 2% and 3.6 mW output power were obtained at 100 mA and 25 ℃ heat-sink temperature

corresponding to 39 nm spectral width with spectral modulation of less than 0.17 dB.

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Keywords

references

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